Renesas Develops Bluetooth Low Energy RF Transceiver Technologies That Simplify Board Design, Reduce Circuit Size and Increase Power Efficiency
Renesas has verified the effectiveness of these technologies on a Bluetooth LE RF transceiver circuit prototype built with a 22-nm CMOS process.
- Renesas has verified the effectiveness of these technologies on a Bluetooth LE RF transceiver circuit prototype built with a 22-nm CMOS process.
- With these new technologies, Renesas reduced the circuit area including the power supply to 0.84 mm2, the worlds smallest for a device of this type.
- They offer best-in-class power efficiency, with power consumption of 3.6 mW and 4.1 mW during reception and transmission respectively.
- These advances enable smaller size, reduced board cost, and lower power consumption, while simplifying the board design process.