International Electron Devices Meeting

ITRI and TSMC Collaborate on Advancing High-Speed Computing with SOT-MRAM

Retrieved on: 
Wednesday, January 17, 2024

This SOT-MRAM array chip showcases an innovative computing in memory architecture and boasts a power consumption of merely one percent of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.

Key Points: 
  • This SOT-MRAM array chip showcases an innovative computing in memory architecture and boasts a power consumption of merely one percent of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.
  • Dr. Shih-Chieh Chang, General Director of Electronic and Optoelectronic System Research Laboratories at ITRI, highlighted the collaborative achievements of both organizations.
  • And its overall computing performance can be further enhanced when integrated with computing in memory circuit design.
  • Looking ahead, this technology holds the potential for applications in high-performance computing (HPC), artificial intelligence (AI), automotive chips, and more."

Avalanche Technology Presents "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEDM Conference

Retrieved on: 
Monday, December 4, 2023

FREMONT, Calif., Dec. 4, 2023 /PRNewswire-PRWeb/ -- Avalanche Technology continues to demonstrate industry leadership of both technology development and commercialization of the most advanced next-generation MRAM platform solutions for the Space Industry. Avalanche will present "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEEE International Electron Devices Meeting (IEDM), held in San Francisco, CA December 9th-13th. The presentation will provide attendees with a comprehensive overview of the technical specifications, design considerations, and real-world applications of Avalanche's most advanced Spin Transfer Torque (STT) MRAM devices for space applications. The company invites industry experts, researchers, and space technology enthusiasts to explore the potential of this groundbreaking innovation.

Key Points: 
  • Avalanche will present "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEEE International Electron Devices Meeting (IEDM), held in San Francisco, CA December 9th-13th.
  • The presentation will provide attendees with a comprehensive overview of the technical specifications, design considerations, and real-world applications of Avalanche's most advanced Spin Transfer Torque (STT) MRAM devices for space applications.
  • The company invites industry experts, researchers, and space technology enthusiasts to explore the potential of this groundbreaking innovation.
  • IEDM is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.

Low-Loss Materials for 6G: IDTechEx Discusses the Current Status and Future Direction

Retrieved on: 
Friday, February 17, 2023

Therefore, it is important to investigate the potential dielectric performance required for 6G technologies, which is spurring current research into ultra-low-loss materials for 6G by many important players.

Key Points: 
  • Therefore, it is important to investigate the potential dielectric performance required for 6G technologies, which is spurring current research into ultra-low-loss materials for 6G by many important players.
  • Some approaches for low-loss materials for 6G involve commercially established materials like PTFE, PPE, and glass fiber-reinforced thermosets with novel architectures or molecular compositions.
  • Current research and development in low-loss materials for 6G are integral to implementing not only RIS but other impactful 6G applications.
  • IDTechEx's report, " Low-loss Materials for 5G and 6G 2023-2033 ", explores these technology and market trends driving low-loss materials for next-gen telecommunications like 6G.

Low-Loss Materials for 6G: IDTechEx Discusses the Current Status and Future Direction

Retrieved on: 
Friday, February 17, 2023

Therefore, it is important to investigate the potential dielectric performance required for 6G technologies, which is spurring current research into ultra-low-loss materials for 6G by many important players.

Key Points: 
  • Therefore, it is important to investigate the potential dielectric performance required for 6G technologies, which is spurring current research into ultra-low-loss materials for 6G by many important players.
  • Some approaches for low-loss materials for 6G involve commercially established materials like PTFE, PPE, and glass fiber-reinforced thermosets with novel architectures or molecular compositions.
  • Current research and development in low-loss materials for 6G are integral to implementing not only RIS but other impactful 6G applications.
  • IDTechEx's report, " Low-loss Materials for 5G and 6G 2023-2033 ", explores these technology and market trends driving low-loss materials for next-gen telecommunications like 6G.

Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability

Retrieved on: 
Friday, December 9, 2022

Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively Toshiba) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability.

Key Points: 
  • Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively Toshiba) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability.
  • Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance[1] (RonA) against its current SiC MOSFET, with no loss of reliability.
  • SiC is widely seen as the next generation material for the devices, as it delivers higher voltages and lower losses than silicon.
  • Toshiba has improved both conduction loss in its SBD-embedded SiC MOSFET, and achieved good diode conductivity, by deploying a check-pattern SBD distribution.

Redaptive, Rabobank and Energetic Insurance reveal $50M partner-driven effort to support energy efficiency projects

Retrieved on: 
Monday, November 21, 2022

The $50 mln Rabobank credit facility finances Redaptives continuing effort to align its energy efficiency upgrades with growing demand from commercial and industrial (C&I) customers to reduce energy consumption.

Key Points: 
  • The $50 mln Rabobank credit facility finances Redaptives continuing effort to align its energy efficiency upgrades with growing demand from commercial and industrial (C&I) customers to reduce energy consumption.
  • Growing corporate demand for energy efficiency prompted Rabobank and Redaptive to seek credit enhancement from Energetic to allow the build-out of Redaptives customer base to be included under the financing.
  • EneRate Credit Cover and other insurance policies are issued by RE3 Energetic Insurance Solutions, LLC, or SiKey Insurance Services, LLC in New York, wholly-owned subsidiaries of Energetic Insurance, Inc.
  • Energetic Insurance complies with all state-mandated regulations for surplus line insurance brokers and is licensed as a surplus lines broker in Massachusetts with License #: 2053916.

Winbond Adopts Low Temperature Soldering (LTS) to Slow the Pace of Global Warming

Retrieved on: 
Wednesday, November 16, 2022

Winbond is at the forefront of this global trend as the Flash Memory provider to offer this process.

Key Points: 
  • Winbond is at the forefront of this global trend as the Flash Memory provider to offer this process.
  • "As a leader in Flash Memory products, Winbond has an opportunity to leverage its position to help drive carbon neutrality and slow global warming," said Winbond.
  • Simpler and faster SMT process for PCBs with plug-in components Theplug-in components only can withstand the lower soldering temperature.
  • Based on Taichung and new Kaohsiung 12-inch fabs in Taiwan, Winbond keeps pace to develop in-house technologies to provide high-quality memory IC products.

ASE announces Dr. William Chen is the 2022 recipient of IMAPS Daniel C. Hughes, Jr. Memorial Award

Retrieved on: 
Tuesday, October 4, 2022

The award was presented at a ceremony at IMAPS 2022 in Boston, Massachusetts by IMAPS President, Dr. Beth Keser.

Key Points: 
  • The award was presented at a ceremony at IMAPS 2022 in Boston, Massachusetts by IMAPS President, Dr. Beth Keser.
  • He is the recipient of IEEE Electronics Packaging Technology Field Award and ASME InterPACK Award.
  • Besides being ASE Fellow, he has also been elected IEEE Fellow, ASME Fellow, and now IMAPS Fellow.
  • One must be an IMAPS member in good standing for a minimum of five years to qualify for this Award.

Renesas Develops Write Technologies for Embedded STT-MRAM Significantly Reducing MCUs Power Consumption in IoT Applications

Retrieved on: 
Tuesday, December 14, 2021

Combined, these technologies make it possible to reduce the power consumption and increase the speed of write operations.

Key Points: 
  • Combined, these technologies make it possible to reduce the power consumption and increase the speed of write operations.
  • With the accelerated spread of IoT technology in recent years, there has been strong demand for reduced power consumption in microcontroller units (MCUs) used in endpoint devices.
  • However, as demand for data processing capability surges for MCUs, the need to ameliorate the trade off between performance and power consumption increases.
  • Previously, the MRAM write voltage was determined based on the worst bit write characteristics in the memory cell characteristics variation.

Intel Breakthroughs Propel Moore’s Law Beyond 2025

Retrieved on: 
Saturday, December 11, 2021

Whats New: In its relentless pursuit of Moores Law, Intel is unveiling key packaging, transistor and quantum physics breakthroughs fundamental to advancing and accelerating computing well into the next decade.

Key Points: 
  • Whats New: In its relentless pursuit of Moores Law, Intel is unveiling key packaging, transistor and quantum physics breakthroughs fundamental to advancing and accelerating computing well into the next decade.
  • View the full release here: https://www.businesswire.com/news/home/20211211005006/en/
    At Intel, the research and innovation necessary for advancing Moores Law never stops.
  • How We Are Doing It: The breakthroughs revealed at IEDM 2021 demonstrate Intel is on track to continue the advancement and benefits of Moores Law well beyond 2025 through its three areas of pathfinding.
  • Intel, the Intel logo and other Intel marks are trademarks of Intel Corporation or its subsidiaries.