Gallium nitride

HG Semiconductor Completed Placing of 14,346,000 Shares

Thursday, December 2, 2021 - 1:18am

HONG KONG, Dec 2, 2021 - (ACN Newswire) - HG Semiconductor Limited ("HG Semiconductor", together with its subsidiaries, "the Group", Stock Code: 6908.HK) is pleased to announce that the Group fulfilled and completed the placing agreement took place on 1 December 2021.

Key Points: 
  • HONG KONG, Dec 2, 2021 - (ACN Newswire) - HG Semiconductor Limited ("HG Semiconductor", together with its subsidiaries, "the Group", Stock Code: 6908.HK) is pleased to announce that the Group fulfilled and completed the placing agreement took place on 1 December 2021.
  • An aggregate of 14,346,000 placing shares, representing approximately 2.55% of the issued share capital of the Group, have been successfully placed to not less than six placees at the placing price of HK$6.20 per placing share.
  • Leveraging its industrial expertise on semiconductor manufacturing, HG Semiconductor has been expanding its business to various kinds of semiconductors including GaN related products.
  • HG Semiconductor Limited (6908.HK) is principally engaged in semiconductor product business in China, including the design, development, manufacturing, subcontracting services and sales of light-emitting diode ("LED") beads and a new generation of semiconductor gallium nitride ("GaN").

CAES Releases Wideband, GaN-Based, High-Power RF Amplifier for Electronic Warfare Systems

Wednesday, December 1, 2021 - 7:15pm

CAES , a leading provider of mission critical electronics for aerospace and defense, introduced a wideband, Gallium Nitride (GaN) based, high-power wideband RF amplifier .

Key Points: 
  • CAES , a leading provider of mission critical electronics for aerospace and defense, introduced a wideband, Gallium Nitride (GaN) based, high-power wideband RF amplifier .
  • This latest innovation builds upon our decades-long heritage in airborne electronic attack while leveraging the latest GaN technologies, said Dave Young, Chief Technology Officer, CAES.
  • Combined with our unique packaging techniques and pioneering cooling approach, the GaN power amplifier is optimized for the next generation of EW systems.
  • The amplifier is available to be viewed at the CAES booth, number 413, at the Association of Old Crows International Symposium and Convention.

Microchip Continues Expansion of Gallium Nitride (GaN) RF Power Portfolio

Wednesday, December 1, 2021 - 1:05pm

CHANDLER, Ariz., Dec. 01, 2021 (GLOBE NEWSWIRE) -- Microchip Technology Inc. (Nasdaq: MCHP) today announced a significant expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz).

Key Points: 
  • CHANDLER, Ariz., Dec. 01, 2021 (GLOBE NEWSWIRE) -- Microchip Technology Inc. (Nasdaq: MCHP) today announced a significant expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz).
  • Like all Microchip GaN RF power products, the devices are fabricated using GaN-on-silicon carbide technology that provides the best combination of high-power density and yield, as well as high-voltage operation and longevity of more than 1 million hours at a 255o C junction temperature.
  • Microchips portfolio of RF semiconductors in addition to GaN devices ranges from gallium arsenide (GaAs) RF amplifiers and modules to low-noise amplifiers, front-end modules (RFFEs), varactor, Schottky, and PIN diodes, RF switches and voltage variable attenuators.
  • The power devices announced today include the ICP0349PP7-1-300I and ICP1543-1-110I , as well as other Microchip RF products, and are available in volume production.

Transphorm Releases Second Totem Pole Evaluation Board with Microchip’s Digital Signal Processing Technology

Tuesday, November 30, 2021 - 1:30pm

Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced the expansion of its design tools using digital signal processing technology from Microchip Technology .

Key Points: 
  • Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced the expansion of its design tools using digital signal processing technology from Microchip Technology .
  • The TDTTP2500B066B-KIT is a 2.5 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board.
  • It pairs Transphorms SuperGaN FETs with Microchips dsPIC33CK digital signal controller (DSC) board, which includes pre-programmed firmware that can be easily customized per end application requirements.
  • The new board also introduces an advanced feature to increase its usability: swappable daughter cards housing Transphorms GaN devices.

Navitas Semiconductor Successfully Concludes $30,000,000 Forward-Purchase Transaction

Tuesday, November 30, 2021 - 1:15pm

Per the agreement, Atalaya had the right to purchase up to 3,000,000 LOKB shares from shareholders who had redeemed shares, or indicated an interest in redeeming shares, prior to the closing of LOKB's business combination transaction with Navitas.

Key Points: 
  • Per the agreement, Atalaya had the right to purchase up to 3,000,000 LOKB shares from shareholders who had redeemed shares, or indicated an interest in redeeming shares, prior to the closing of LOKB's business combination transaction with Navitas.
  • On November [18], 2021, Atalaya notified Navitas that it had sold all 3,000,000 shares covered by the agreement in open-market transactions.
  • Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014.
  • Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor.

Navitas Drives Xiaomi's New Ultrafast-Charging Note 11 Pro+ Smartphone

Monday, November 29, 2021 - 9:05pm

EL SEGUNDO, Calif., Nov. 29, 2021 /PRNewswire/ -- Navitas Semiconductor today announced details of how its gallium nitride (GaN) semiconductors - GaNFast power ICs with GaNSense technology - are used to ultra-fast-charge Xiaomi's new Note 11 Pro+ flagship smartphone.

Key Points: 
  • EL SEGUNDO, Calif., Nov. 29, 2021 /PRNewswire/ -- Navitas Semiconductor today announced details of how its gallium nitride (GaN) semiconductors - GaNFast power ICs with GaNSense technology - are used to ultra-fast-charge Xiaomi's new Note 11 Pro+ flagship smartphone.
  • Navitas' GaNFast power ICs integrate GaN power, GaN drive, protection and control.
  • "These ultra-fast chargers require double the GaN content per charger, which of course doubles the revenue opportunity for Navitas.
  • Over 130 Navitas patents are issued or pending, and over 30 million GaNFast power ICs have been shipped with zero reported GaN field failures.

2021 Microelectronics Technology TechVision Opportunity Engine - ResearchAndMarkets.com

Thursday, November 25, 2021 - 1:07pm

The "Microelectronics Technology TechVision Opportunity Engine" newsletter has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Microelectronics Technology TechVision Opportunity Engine" newsletter has been added to ResearchAndMarkets.com's offering.
  • The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-related innovations and developments on a weekly basis.
  • This monthly TOE highlights innovation features, value propositions, and the industry impact of 12 innovations along a particular theme, and includes strategic insights on the technology from a global perspective.
  • Strategic insights include insights on IP, competitive landscape, key research focus areas, key success factors for technology adoption, and noteworthy funding details.

HG Semiconductor Announces its Strategic Investment in GaN Systems Inc.

Wednesday, November 24, 2021 - 11:36pm

HONG KONG, Nov 25, 2021 - (ACN Newswire) - HG Semiconductor Limited ("HG Semiconductor", together with its subsidiaries, "the Group", Stock Code: 6908.HK) is pleased to announce that FastSemi Holding Limited, a wholly-owned subsidiary of the Group, has invested in GaN Systems Inc. ("GaN Systems"), a leader in gallium nitride ("GaN") technology, and agreed to invest by subscribing for the series F-2 convertible preference shares in GaN Systems as a strategic investor.

Key Points: 
  • HONG KONG, Nov 25, 2021 - (ACN Newswire) - HG Semiconductor Limited ("HG Semiconductor", together with its subsidiaries, "the Group", Stock Code: 6908.HK) is pleased to announce that FastSemi Holding Limited, a wholly-owned subsidiary of the Group, has invested in GaN Systems Inc. ("GaN Systems"), a leader in gallium nitride ("GaN") technology, and agreed to invest by subscribing for the series F-2 convertible preference shares in GaN Systems as a strategic investor.
  • With in-depth knowledge in GaN technology, the management team of GaN Systems combines decades of experience in developing GaN products.
  • Subsequent to this investment, HG Semiconductor will be able to nominate an independent board observer from Canada to be on the board of GaN Systems.
  • Furthermore, GaN Systems also proposes to qualify the subsidiary of the Group as a foundry partner to GaN Systems and enter into a licence agreement whereby the Group may use certain GaN technology of GaN Systems for manufacturing its semiconductors components.

SDK to Raise Prices of High-Purity Gases for Electronics

Thursday, November 18, 2021 - 2:30am

TOKYO, Nov 18, 2021 - (JCN Newswire) - Showa Denko (SDK; TSE: 4004) decided to raise prices of its high-purity gases for electronics which are used for production of semiconductor integrated circuits and other electronic materials.

Key Points: 
  • TOKYO, Nov 18, 2021 - (JCN Newswire) - Showa Denko (SDK; TSE: 4004) decided to raise prices of its high-purity gases for electronics which are used for production of semiconductor integrated circuits and other electronic materials.
  • Specifically, SDK will raise prices of high-purity gases for electronics by 20% or more as from delivery on January 1, 2022.
  • High-purity gases for electronics are used in the production of semiconductor integrated circuits, LCD panels, and GaN LEDs, as etching gases to produce electronic circuits by creating fine ditches and holes in thin films on silicon substrates, and as cleaning gases to remove unwanted chemical substances that adhere to chamber walls after deposition of thin films on silicon substrates.
  • (SDK; TSE: 4004, ADR: SHWDY) is a major manufacturer of chemical products serving from heavy industry to computers and electronics.

Aehr Test Systems Joins PowerAmerica Institute to Support Advancing SiC and GaN Technologies for Next Generation Power Electronics and Electric Vehicles

Thursday, November 18, 2021 - 12:30pm

The collaboration will result in bringing next generation silicon carbide and gallium nitride power electronics to markets faster, reducing cost and risk factors associated with new generation technologies.

Key Points: 
  • The collaboration will result in bringing next generation silicon carbide and gallium nitride power electronics to markets faster, reducing cost and risk factors associated with new generation technologies.
  • An organization that brings together the semiconductor manufacturers and the companies that use semiconductor power electronics in their products, PowerAmerica Institute is well placed as an information hub.
  • Wafer test and burn-in equipment play a key role in high volume SiC and GaN production, as wafer level stress testing contributes to highly reliable SiC and GaN power electronic products,"said Victor Veliadis, Executive Director of PowerAmerica.
  • Gayn Erickson, President and CEO ofAehr Test Systems, commented, Aehr Test is excited about becoming the newest member ofPowerAmericaand joining the other prestigious organizations in advancing wide bandgap (WBG) Silicon Carbide (SiC) and Gallium Nitride (GaN) technologiesand accelerating the next generation of power electronics.