Field-effect transistor

Toshiba is a Winner at AspenCore World Electronics Achievement Awards

Retrieved on: 
Thursday, November 24, 2022
Semiconductor, Automotive Manufacturing, Technology, Manufacturing, Batteries, Hardware, HDD, IX, World Electronic Music Festival, Device, Carbon, Multimedia, Electronics, Field-effect transistor, WEAA, Learning, MOSFET, Television set, Consumer electronics, Toshiba

Toshiba Devices & Storage (Shanghai) Co., Ltd., the Shanghai-based subsidiary of Toshiba Electronic Devices & Storage Corporation (Toshiba), was the winner of the Power Semiconductor/Driver of the Year category in the World Electronics Achievement Awards (WEAA) 2022.

Key Points: 
  • Toshiba Devices & Storage (Shanghai) Co., Ltd., the Shanghai-based subsidiary of Toshiba Electronic Devices & Storage Corporation (Toshiba), was the winner of the Power Semiconductor/Driver of the Year category in the World Electronics Achievement Awards (WEAA) 2022.
  • Toshiba Devices & Storage (Shanghai) Co., Ltd. was at the ceremony held in Shenzhen, China on November 10, 2022 to receive the award.
  • View the full release here: https://www.businesswire.com/news/home/20221123005504/en/
    Toshiba is a Winner at AspenCore World Electronics Achievement Awards (Photo: Business Wire)
    US-based AspenCore is one of the worlds leading technology media groups, and every year its highly regarded WEAA recognize companies and individuals that have made outstanding contributions to innovation and advancing the electronics industry.
  • Tsutomu Nomura, President of Toshiba Devices & Storage (Shanghai) Co., Ltd. said We are delighted to be recognized by the prestigious WEAA.

Renesas Programmable Smart Gate Driver for BLDC Motor Applications Drives Multiple Configurations; Integrates Analog Power Components to Reduce BOM Cost and Board Space

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Wednesday, December 8, 2021
Technology, Hardware, Semiconductor, Consumer Electronics, QFN, Bio-FET, Lightwave Electronics Corporation, Twitter, BLDC, TSE, LDOS, LDO, Traction, YouTube, Winning Combinations: Deep Purple and Rainbow, BOM, Infrastructure, FET, MCU, CPU, Efficiency, Field-effect transistor, Gallium nitride, SOC, SPI, Logic, Multimedia, Instagram, LinkedIn, IOT, Solution, Remarkable, Electric motor, Video game console

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA227063 Smart Gate Driver for brushless DC (BLDC) motor applications.

Key Points: 
  • Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA227063 Smart Gate Driver for brushless DC (BLDC) motor applications.
  • The new device is programmable via an SPI interface, enabling it to support both motors with rotor position sensors and sensorless applications.
  • View the full release here: https://www.businesswire.com/news/home/20211208005375/en/
    In addition to its unique flexibility, the RAA227063 three-phase FET driver is highly integrated.
  • This high level of integration simplifies design, cuts overall BOM cost, and reduces board space requirements by 30 percent or more.

ROHM’s Latest Generation of Dual MOSFETs: Delivering Class-Leading Low ON Resistance

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Wednesday, October 13, 2021
MOSFET, Miniaturization, ROHM, Field-effect transistor, Efficiency, Next, Rohm, GLOBE, Workload, CA, Electronic component

Furthermore, MOSFETs are expected to deliver higher speed switching, together with lower ON resistance, to further improve the efficiency and miniaturization of motors.

Key Points: 
  • Furthermore, MOSFETs are expected to deliver higher speed switching, together with lower ON resistance, to further improve the efficiency and miniaturization of motors.
  • In response, ROHM developed its sixth generation 40V/60V MOSFETs utilizing the latest precision processes for N-channel MOSFETs, following the release of the latest generation P-channel MOSFETs announced in late 2020.
  • This combination allows ROHM to provide class-leading dual N-channel + P-channel MOSFETs that deliver the 40V/60V withstand voltage required for 24V input.
  • The QH8Mx5/SH8Mx5 series utilizes original latest processes to achieve class leading lower ON resistance, 61% lower than the P-channel MOSFETs in dual MOSFET products in the 40V class.

Field Effect Finds Kernel Elevation of Privilege Vulnerabilities in  Almost Every Version of Microsoft Windows Currently Used

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Thursday, August 12, 2021
Microsoft, CEO, News, Intelligence, CVSS, MDR, Research, Gaps, Software, Vista, CTO, Field-effect transistor, Solution, ALPC, Field effect, Animal, Weapon, Medical device, Risk management

"Once attackers haveaccess to the kernel,theycan bypass traditional security controls and move deeply into operating systems, applications, and more.

Key Points: 
  • "Once attackers haveaccess to the kernel,theycan bypass traditional security controls and move deeply into operating systems, applications, and more.
  • It is a race condition vulnerability and resides in the Advanced Local Procedure Call (ALPC) facility of the Windows kernel (ntoskrnl.exe).
  • Field Effect has confirmed that the vulnerability has been present since then, making almost every computer running Windows in the world vulnerable.
  • As a result, Field Effect customers using the company's Covalence threat monitoring, detection, blocking, and response (MDR) solution, are protected from these vulnerabilities.

ROHM Introduces Industry-first AC/DC Converter ICs in a Surface Mount Package with Built-in 1700V SiC MOSFET

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Thursday, June 17, 2021
Electronics industry, Transistors, Semiconductor devices, Power electronics, MOSFETs, Digital electronics, Integrated circuits, Power semiconductor device, Field-effect transistor

Santa Clara, CA and Kyoto, Japan, June 17, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday introduced the industrys first* AC/DC converter ICs with a built-in 1700V SiC MOSFET ( BM2SC12xFP2-LBZ ) in the TO263-7L package.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, June 17, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday introduced the industrys first* AC/DC converter ICs with a built-in 1700V SiC MOSFET ( BM2SC12xFP2-LBZ ) in the TO263-7L package.
  • By applying existing Si MOSFET devices, the designer cannot achieve higher efficiency or increased output power because of the higher losses of Si devices.
  • ROHMs BM2SC12xFP2-LBZ power ICs are Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact surface mount package (TO263-7L).
  • At the same time, adopting an SiC MOSFET improves power efficiency by up to 5% and minimizes the risk of component failure.

Radiation-Hardened MOSFET Qualified for Commercial and Military Satellites and Space Power Solutions

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Tuesday, June 8, 2021
Electronics industry, Technology, Transistors, Integrated circuits, Semiconductor devices, Digital electronics, MOSFET, DC-to-DC converter, Field-effect transistor, Radiation hardening, MCHP

To meet this requirement, Microchip Technology Inc. (Nasdaq: MCHP) today announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), metaloxidesemiconductor field-effect transistor (MOSFET) for commercial aerospace and defense space applications.

Key Points: 
  • To meet this requirement, Microchip Technology Inc. (Nasdaq: MCHP) today announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), metaloxidesemiconductor field-effect transistor (MOSFET) for commercial aerospace and defense space applications.
  • Microchips radiation-hardened M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls and general-purpose switching.
  • The MOSFET withstands the harsh environments of space, extends reliability of power circuitry and meets all requirements of MIL-PRF19500/746 with enhanced performance.
  • The M6 MRH25N12U3 MOSFET is designed for future satellite system designs as well as serving as an alternate source in existing systems.

Alpha and Omega Semiconductor Introduces ESD Solutions with High-Trigger Voltage, Ultra-Low Clamping Voltage & Capacitance for Type-C

Retrieved on: 
Tuesday, June 8, 2021
Technology, Hardware, Semiconductor, Electronics industry, Transistors, Semiconductor devices, Power electronics, MOSFETs, Power semiconductor device, Power MOSFET, Insulated-gate bipolar transistor, Forward-looking statement, Gallium nitride, Field-effect transistor

Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC/GaN , Power IC , and Digital Power products.

Key Points: 
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC/GaN , Power IC , and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions.
  • These forward-looking statements include, without limitation, references to the efficiency and capability of new products and the potential to expand into new markets.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

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Tuesday, May 25, 2021
Mobile, Wireless, Technology, Semiconductor, Travel, Security, Satellite, Photography, Nanotechnology, Audio, Video, Other Manufacturing, Other Technology, Telecommunications, Software, Engineering, Networks, Internet, Automotive Manufacturing, Hardware, Aerospace, Electronic design automation, Manufacturing, Data management, VoIP, Consumer electronics, Electronics industry, Field-effect transistor, Alex Lidow, Inventions, Voltage regulation, Electric power conversion, Power supplies, Integrated circuits

This demonstration board features the 100V EPC2218 and 40 V EPC20 24 GaN FETs.

Key Points: 
  • This demonstration board features the 100V EPC2218 and 40 V EPC20 24 GaN FETs.
  • This new demonstration board can operate from an input voltage between 36 V and 60 V and delivers up to 83.3 A load current.
  • The peak efficiency from 48 V to 12 V is 98% and the full load efficiency, at 12 V when delivering 1 kW, is 97%.
  • eGaN FETs and integrated circuits increase power density for 48 V to 12 V converters and address data center application demands for higher power in a small size, said Alex Lidow, CEO of EPC.

Vishay Intertechnology Best in Class 30 V N-Channel MOSFET Delivers High Power Density and Efficiency for Isolated and Non-Isolated Topologies

Retrieved on: 
Monday, May 24, 2021
Transistors, Electronics industry, Semiconductor devices, Vishay Intertechnology, Power electronics, MOSFETs, VSH, Field-effect transistor

MALVERN, Pa., May 24, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies.

Key Points: 
  • MALVERN, Pa., May 24, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies.
  • Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 m at 10 V, a 5 % improvement over the previous-generation product.
  • The SiSS52DNs FOM represents a 29 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
  • By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.

EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors

Retrieved on: 
Tuesday, May 4, 2021
Semiconductor, Engineering, Technology, Manufacturing, Other Manufacturing, Hardware, Electronics industry, Electrical engineering, Inventions, Digital electronics, Integrated circuits, Semiconductor devices, Power electronics, Electric power conversion, Power inverter, Gate driver, MOSFET, Field-effect transistor

b'EPC announces the availability of the EPC9146 , a 400 W motor drive demonstration.

Key Points: 
  • b'EPC announces the availability of the EPC9146 , a 400 W motor drive demonstration.
  • The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower\xe2\x84\xa2 Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 ARMS) maximum output current.
  • The inverter board measures just 81 mm x 75 mm and achieves an efficiency of greater than 98.4% at 400 W output power.\nThe EPC9146 can be paired with individually designed mating boards allowing the user to control the power board directly through various mainstream microcontroller boards leveraging existing resources for quick development.
  • eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters , remote sensing technology (lidar) , motor drives for emobility, robotics, and drones, and low cost satellites\neGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.\nView source version on businesswire.com: https://www.businesswire.com/news/home/20210504005286/en/\n'