Micrometre

Crucial Launches Lightning-Fast Gen4 Consumer NVMe SSDs for Gamers and Creators

Retrieved on: 
Tuesday, October 31, 2023

BOISE, Idaho, Oct. 31, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced the availability of the Crucial® T500 Gen4 NVMe® SSD as an expansion of its award-winning NVMe solid-state drive (SSD) portfolio .

Key Points: 
  • BOISE, Idaho, Oct. 31, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced the availability of the Crucial® T500 Gen4 NVMe® SSD as an expansion of its award-winning NVMe solid-state drive (SSD) portfolio .
  • The Crucial T500 SSD is a best-in-class PCIe® 4.0 NVMe drive, which leverages Micron’s advanced 232-layer 3D NAND technology with industry-leading NAND I/O speeds of 2.4 gigabytes per second (GB/s) and is engineered to improve performance for console and PC gamers, photo and video editors and content creators.
  • For more information on the Crucial T500 SSD, visit www.crucial.com/T500 .
  • Micron’s Crucial brand is uniquely able to connect millions of customers to the innovation and technology that Micron has been perfecting for more than four decades.

Global Memory Market Valued at $110.16 Billion in 2022 Set to Soar with a 19.54% CAGR from 2023 to 2028 - ResearchAndMarkets.com

Retrieved on: 
Friday, November 3, 2023

The global memory market, valued at $110.16 billion in 2022, is poised for significant growth, with a projected Compound Annual Growth Rate (CAGR) of 19.54% during the forecast period from 2023 to 2028.

Key Points: 
  • The global memory market, valued at $110.16 billion in 2022, is poised for significant growth, with a projected Compound Annual Growth Rate (CAGR) of 19.54% during the forecast period from 2023 to 2028.
  • The memory market is expected to experience a temporary decline in 2023 due to inflation and weakening demand in end markets, particularly those relying on consumer spending.
  • By Demand: The memory market is categorized based on the demand for DRAM and NAND memory.
  • Meanwhile, NAND memory demand continues to grow, with SSD NAND memory leading the market due to its high performance and durability.

DRAM Dominates the Global Memory Market with Fastest CAGR, Fueled by Demand in High-Performance Computing, AI, and Mobile Devices

Retrieved on: 
Monday, November 6, 2023

By Type: The global memory market is segmented into three types: DRAM, NAND, and Others.

Key Points: 
  • By Type: The global memory market is segmented into three types: DRAM, NAND, and Others.
  • By Demand: The memory market is categorized based on the demand for DRAM and NAND memory.
  • Meanwhile, NAND memory demand continues to grow, with SSD NAND memory leading the market due to its high performance and durability.
  • Growth Drivers: The global memory market is expected to thrive due to the transformative impact of 5G technology, driving the demand for memory components.

Micron Collaborates with Qualcomm to Accelerate Generative AI at the Edge for Flagship Smartphones

Retrieved on: 
Tuesday, October 24, 2023

Running at the world’s fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge.

Key Points: 
  • Running at the world’s fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge.
  • Enabled by its innovative, industry-leading 1β process node technology, Micron LPDDR5X also delivers advanced power-saving capabilities for mobile users.
  • The Snapdragon 8 Gen 3 allows powerful generative AI models to run locally on flagship smartphones, unlocking a new generation of AI-based applications and capabilities.
  • These power savings are especially crucial for energy-intensive, AI-fueled applications, enabling users to reap the benefits of generative AI with prolonged battery life.

Micron Low-Power Memory Solution Boosts Mixed and Virtual Reality Experiences on Snapdragon XR2 Gen 2

Retrieved on: 
Thursday, October 19, 2023

Micron’s LPDDR5X and UFS 3.1 deliver next-level speed, performance and low-power consumption in the smallest form factors needed to support untethered mixed reality (MR) and virtual reality (VR) devices.

Key Points: 
  • Micron’s LPDDR5X and UFS 3.1 deliver next-level speed, performance and low-power consumption in the smallest form factors needed to support untethered mixed reality (MR) and virtual reality (VR) devices.
  • Micron’s LPDDR5X is the company’s most advanced low-power memory, delivering power efficiency enabled by its innovative 1-alpha process node technology and JEDEC power advancements .
  • The Snapdragon XR2 Gen 2 Platform offers a single-chip architecture to unlock next-level immersive MR and VR experiences in thinner and more comfortable headsets that don’t require an external battery pack.
  • Micron’s 1-alpha node process technology, which underpins Micron’s LPDDR5X, provides higher bit density, performance and energy efficiency for XR devices.

INFICON to Showcase Game-Changing Leak-Detection Solutions at The Assembly Show 2023

Retrieved on: 
Tuesday, October 24, 2023

For 20 years, manufacturers have been trying to automate leak detection on hand braze copper tubing in refrigerator applications.

Key Points: 
  • For 20 years, manufacturers have been trying to automate leak detection on hand braze copper tubing in refrigerator applications.
  • INFICON has recently partnered in developing a vision system capable of picking up on discrepancies of hand brazed copper tubing from part to part.
  • Manufacturers can select a system based on the need for measurement level, reproducibility of results and the speed of leak-tightness testing.
  • Diminished levels of hydrogen create the risk of vehicles losing power, which is a safety risk for vehicles in motion.

Micron Delivers Industry-Leading Mainstream PCIe® Gen4 Data Center SSD

Retrieved on: 
Monday, October 16, 2023

BOISE, Idaho, Oct. 16, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc., (Nasdaq: MU), today announced the Micron 7500 NVMe SSD for data center workloads. The 7500 SSD is the world's only mainstream data center SSD to feature 200+ layer NAND, utilizing Micron's 232-layer NAND and enabling up to 242% better random write performance than competitive drives.1 The SSD also delivers sub-1 millisecond (1ms) latency for 6x9s quality-of-service (QoS) in mainstream drives, creating a new, industry-leading class of SSDs perfectly suited to deliver the consistency required in the cloud.2

Key Points: 
  • Micron 7500 is the world’s first mainstream data center SSD with 200+ layer NAND, providing superior quality of service and delivering new benchmarks in performance
    BOISE, Idaho, Oct. 16, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc., (Nasdaq: MU), today announced the Micron 7500 NVMe SSD for data center workloads.
  • For example, the drive improves RocksDB performance by up to 2.1 times versus competitive SSDs.3
    “The Micron 7500 SSD is a game-changer for data center workloads, delivering blazing-fast performance, exceptional QoS reliability and advanced security unmatched by any other SSD in its class,” said Alvaro Toledo, vice president and general manager of Micron’s Data Center Storage group.
  • SSDs like the Micron 7500, which deliver low and consistent latency, are at the heart of it.”
    The Micron 7500 SSD offers:
    The Micron 7500 SSD offers broad support for the Open Compute Project (OCP) SSD 2.0 specification,5 which provides intelligent management, performance optimization, seamless integration, and error handling for data center environments.
  • To learn more about the Micron 7500 SSD and how it can power your data center workloads, visit micron.com/7500 .

Micron Delivers High-Speed 7,200MT/s DDR5 Memory Using 1β Technology

Retrieved on: 
Tuesday, October 10, 2023

BOISE, Idaho, Oct. 10, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory.

Key Points: 
  • BOISE, Idaho, Oct. 10, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory.
  • With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron’s 1β DDR5 DRAM is now shipping to all data center and PC customers.
  • Micron’s 1β technology enables Micron to deliver a broad portfolio of memory-based solutions, including DDR5 RDIMMs and MCRDIMMs using 16Gb, 24Gb and 32Gb DRAM die, LPDDR5X using 16Gb and 24Gb DRAM die , HBM3E and GDDR7.
  • “By leveraging Micron’s advanced 1β DDR5 memory, we’re able to evaluate and qualify our high-performance DDR5 IP with speeds up to 7,200MT/s.”

Cloudian Delivers Groundbreaking Object Storage Performance and Efficiency with Next-Gen AMD / Micron Platform

Retrieved on: 
Tuesday, October 10, 2023

SAN MATEO, Calif., Oct. 10, 2023 (GLOBE NEWSWIRE) -- Cloudian, in collaboration with AMD and Micron, is thrilled to announce breakthrough levels of object storage performance and power efficiency.

Key Points: 
  • SAN MATEO, Calif., Oct. 10, 2023 (GLOBE NEWSWIRE) -- Cloudian, in collaboration with AMD and Micron, is thrilled to announce breakthrough levels of object storage performance and power efficiency.
  • Cloudian object storage is increasingly deployed in primary data applications that require high throughput, such as data analytics and AI/ML.
  • "Our customers need storage solutions that deliver extreme throughput and efficiency as they deploy Cloudian’s cloud-native object storage software in mission-critical, performance-sensitive use cases," said Michael Tso, CEO of Cloudian.
  • "Our collaboration with Cloudian and AMD highlights the exceptional performance and efficiency of our Micron 6500 ION NVMe SSDs."

Micron Initiates Construction on Leading-Edge Memory Manufacturing Fab

Retrieved on: 
Thursday, October 5, 2023

BOISE, Idaho, Oct. 05, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), one of the world’s largest semiconductor companies and the only U.S.-based manufacturer of memory, will today celebrate the start of construction on the nation’s first new memory manufacturing fab in 20 years. Company executives will join Idaho Governor Brad Little, Boise Mayor Lauren McLean, other community partners and team members to mark the milestone with a ceremonial concrete pour at Micron’s Boise headquarters on the 45th anniversary of the company’s founding.

Key Points: 
  • On the 45th anniversary of company’s founding, Micron lays the foundation for America’s future
    BOISE, Idaho, Oct. 05, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), one of the world’s largest semiconductor companies and the only U.S.-based manufacturer of memory, will today celebrate the start of construction on the nation’s first new memory manufacturing fab in 20 years.
  • Just over a year ago, Micron announced its plans to invest approximately $15 billion through the end of the decade to construct a new fab for leading-edge memory manufacturing, to be co-located with the company’s R&D epicenter in its hometown of Boise.
  • The project will create over 17,000 new Idaho jobs, including 2,000 Micron direct jobs, furthering the need for a diverse, highly skilled workforce.
  • Co-locating the leading-edge memory manufacturing fab is expected to provide multiple strategic benefits for the company and the U.S. semiconductor industry at large as Micron continues to drive industry leadership.