NEO Semiconductor Releases Technology CAD (TCAD) Simulation Data for Ground-Breaking 3D X-DRAM
SAN JOSE, Calif., Dec. 6, 2023 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced findings of 3D X-DRAM™ simulations. Semiconductor manufacturers and engineers use TCAD to simulate emerging technologies and optimize new products.
- "We use these same tools to create models and run simulations demonstrating the feasibility of adopting 3D X-DRAM technology to bring 3D DRAM products to market."
- 3D X-DRAM uses innovative Floating Body Cell (FBC) technology with one transistor and zero capacitors for each data bit.
- A simple 3D structure makes 3D X-DRAM less risky and costly than 3D DRAM alternatives.
- NEO estimates 3D X-DRAM achieves 128 Gb density with 230 layers—4 times better than 2D DRAM.