Gate driver

2019 Report on 200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver - ResearchAndMarkets.com

Retrieved on: 
Monday, March 16, 2020
Technology, Hardware, Transistors, Electronic engineering, Electrical components, Semiconductor devices, Power electronics, Ball grid array, MOSFETs, High-electron-mobility transistor, Gate driver, Surface-mount technology, Power semiconductor device, BGA

The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.
  • This report includes a technology and cost comparison of this unique EPC2112 device with the monolithic GaN solution proposed by Navitas.
  • Finally, this report provides a comparison of EPC2112 with the previous 200V EPC GaN device, the EPC2010.
  • This new Integrated Gate Driver eGaN IC design consists of a 40-m, 200V eGaN power transistor and an optimized gate driver in a low inductance surface mount Ball Grid Array (BGA) package.

SkyWater Chosen by Applied Novel Devices (AND) to Produce New High-Performance Si Power MOSFETs

Retrieved on: 
Tuesday, March 10, 2020
Technology, Mobile, Wireless, Hardware, Semiconductor, Semiconductor devices, Electrical components, Transistors, MOSFETs, Logic families, Silicon, Power semiconductor device, CMOS, Field-effect transistor, Power electronics, Diode, Gate driver, Technology, Mobile, Wireless, Hardware, Semiconductor, Semiconductor devices, Electrical components, Transistors, MOSFETs, Logic families, Silicon, Power semiconductor device, CMOS, Field-effect transistor, Power electronics, Diode, Gate driver, Applied Novel Devices, SkyWater Technology

At the Applied Power Electronics Conference (APEC 2020), SkyWater plans to showcase this collaboration and its manufacturing services for discrete power devices which are in high demand due to the explosion of wireless and battery powered connected devices.

Key Points: 
  • At the Applied Power Electronics Conference (APEC 2020), SkyWater plans to showcase this collaboration and its manufacturing services for discrete power devices which are in high demand due to the explosion of wireless and battery powered connected devices.
  • ANDs high-performance Si power MOSFETs are based on novel channel and substrate engineering to improve critical figure of merits of the power MOSFET.
  • In addition to MOSFETs, SkyWater also supports power management applications with IGBT and TVS diode manufacturing services as well as high-voltage (HV) CMOS for PMICs (power management integrated circuits).
  • For more information on SkyWaters power management process offerings, please contact:
    Applied Novel Devices (AND) was founded in 2008 and is based in Austin, Texas.

Easy-to-Use SCALE-2 Plug-and-Play Gate Drivers from Power Integrations Suit Press-Pack IGBT Modules

Retrieved on: 
Tuesday, March 3, 2020
Semiconductor, Hardware, Alternative energy, Energy, Technology, Electromagnetism, Energy, Articles, Power electronics, Electric power, Energy conversion, Static synchronous compensator, High-voltage direct current, Gate driver, HVDC converter

Based on Power Integrations widely used SCALE-2 chipset, the new gate-drivers are perfectly suited for high-reliability applications such as HVDC VSC, STATCOM/FACTS and medium-voltage drives.

Key Points: 
  • Based on Power Integrations widely used SCALE-2 chipset, the new gate-drivers are perfectly suited for high-reliability applications such as HVDC VSC, STATCOM/FACTS and medium-voltage drives.
  • View the full release here: https://www.businesswire.com/news/home/20200303005169/en/
    Easy-to-Use SCALE-2 Plug-and-Play Gate Drivers from Power Integrations Suit Press-Pack IGBT Modules (Graphic: Business Wire)
    The 1SP0351 drivers are equipped with Dynamic Advanced Active Clamping (DAAC), short-circuit protection, a built in DC-DC converter, regulated turn-on gate-drive voltage, DC-DC overload monitoring and supply-voltage monitoring.
  • Comments Thorsten Schmidt, technical product manager at Power Integrations: These drivers are the optimum drive solution for the industrys leading press-pack IGBT modules.
  • Power Integrations, SCALE, SCALE-2 and the Power Integrations logo are trademarks or registered trademarks of Power Integrations, Inc. All other trademarks are the property of their respective owner.

200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver

Retrieved on: 
Monday, March 2, 2020
Transistors, Electrical components, Semiconductor devices, Power electronics, MOSFETs, Terahertz technology, High-electron-mobility transistor, Field-effect transistor, Gate driver, Integrated circuit, Depletion and enhancement modes, Ball grid array

DUBLIN, March 2, 2020 /PRNewswire/ -- The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, March 2, 2020 /PRNewswire/ -- The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.
  • Finally, this report provides a comparison of EPC2112 with the previous 200V EPC GaN device, the EPC2010.
  • The device is an enhancement-mode gallium-nitride (eGaN) single Field Effect Transistor (FET) with a Gate Driver Integrated Circuit (IC).
  • This new Integrated Gate Driver eGaN IC design consists of a 40-m, 200V eGaN power transistor and an optimized gate driver in a low inductance surface mount Ball Grid Array (BGA) package.

Power Integrations’ Highly Robust SCALE-iDriver Gate Drivers Achieve AEC-Q100 Automotive Qualification

Retrieved on: 
Tuesday, January 14, 2020
Semiconductor, Hardware, Alternative energy, Energy, Technology, Inventions, Gate driver, Field-effect transistor, Associated Equipment Company, Technology, Electronic engineering

View the full release here: https://www.businesswire.com/news/home/20200114005815/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20200114005815/en/
    Power Integrations highly robust SCALE-iDriver gate drivers achieve AEC-Q100 automotive qualification (Photo: Business Wire)
    Compact, efficient and highly robust, the new driver IC uses Power Integrations high-speed FluxLink communications technology to ensure system safety even during fault conditions.
  • Power Integrations AEC-Q100-qualified SCALE-iDriver SID1181KQ gate drivers are available now, priced at $4.81 in 10,000-piece quantities.
  • Power Integrations, Inc. is a leading innovator in semiconductor technologies for high-voltage power conversion.
  • Power Integrations, SCALE, SCALE-iDriver and the Power Integrations logo are trademarks or registered trademarks of Power Integrations, Inc. All other trademarks are the property of their respective owner.

Boston Semi Equipment Extends Peak Voltage for Handling MOSFET, IGBT, Gate Arrays and SiC Power ICs

Retrieved on: 
Tuesday, December 17, 2019
Semiconductor, Technology, Other Technology, Software, Networks, Internet, Hardware, Transistors, Semiconductor devices, Electrical components, MOSFETs, Gate driver, Power semiconductor device, Field-effect transistor, High voltage, Insulated-gate bipolar transistor

A new test site design provides increased voltage isolation during testing, raising the peak voltage handled by the Zeus high voltage handler to 8.4kV RMS (11.8kV peak).

Key Points: 
  • A new test site design provides increased voltage isolation during testing, raising the peak voltage handled by the Zeus high voltage handler to 8.4kV RMS (11.8kV peak).
  • The growing market for power ICs is driven by increasing demand for energy efficient products, such as electric vehicles.
  • Automotive, medical, industrial and consumer markets will benefit from the efficiencies and lower cost of test by handling high voltage MOSFET, IGBT, gate drivers, and SiC devices in BSEs Zeus handler.
  • Boston Semi Equipment is the industry leader in high voltage handling, providing high voltage handling solutions for over 25 years.

Maxim's Isolated Silicon Carbide Gate Driver Provides Best-in-Class Power Efficiency and Increased System Uptime

Retrieved on: 
Tuesday, December 17, 2019
Electromagnetism, Electrical engineering, Materials, Power electronics, Semiconductor devices, Inverters, Power inverter, Transistor, Switched-mode power supply, Silicon carbide, Gate driver

The driver IC is intended for use in switch-mode power supplies within industrial communication systems for solar power inverters, motor drives, electric cars, energy storage systems, uninterrupted power supplies, data farms and high-power/high-efficiency power supplies.

Key Points: 
  • The driver IC is intended for use in switch-mode power supplies within industrial communication systems for solar power inverters, motor drives, electric cars, energy storage systems, uninterrupted power supplies, data farms and high-power/high-efficiency power supplies.
  • For details about Maxim's isolated gate drivers, visit http://bit.ly/Isolated_Gate_Drivers_Maxim
    To order MAX22701E or learn more, visit http://bit.ly/MAX22701E_Product
    Many switch-mode power supply applications are adopting wide-bandgap silicon carbide (SiC) transistors to improve power efficiency and transistor reliability.
  • CMTI is up to 3x higher than the closest competitor, which results in increased system uptime.
  • In the 90 percent efficiency range, every 1 percentage point in efficiency results in about a 10 percent improvement in power loss.

Boston Semi Equipment Extends Peak Voltage for Handling MOSFET, IGBT, Gate Arrays and SiC Power ICs

Retrieved on: 
Tuesday, December 17, 2019
Transistors, Semiconductor devices, Electrical components, MOSFETs, Gate driver, Power semiconductor device, Field-effect transistor, High voltage, Insulated-gate bipolar transistor

A new test site design provides increased voltage isolation during testing, raising the peak voltage handled by the Zeus high voltage handler to 8.4kV RMS (11.8kV peak).

Key Points: 
  • A new test site design provides increased voltage isolation during testing, raising the peak voltage handled by the Zeus high voltage handler to 8.4kV RMS (11.8kV peak).
  • The growing market for power ICs is driven by increasing demand for energy efficient products, such as electric vehicles.
  • Automotive, medical, industrial and consumer markets will benefit from the efficiencies and lower cost of test by handling high voltage MOSFET, IGBT, gate drivers, and SiC devices in BSEs Zeus handler.
  • Boston Semi Equipment is the industry leader in high voltage handling, providing high voltage handling solutions for over 25 years.

Half-Bridge Evaluation Board from GaN Systems and ON Semiconductor Demonstrates Next Performance Leap in GaN

Retrieved on: 
Monday, November 4, 2019
Semiconductor devices, Electrical components, Semiconductors, Gallium nitride, Nitrides, High-electron-mobility transistor, Transistor, Gate driver, Gan, Monolithic microwave integrated circuit

OTTAWA and PHOENIX, Nov. 04, 2019 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN power semiconductors and ON Semiconductor , a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems 650 V, 30 A GaN E-HEMTs and ON Semiconductors award-winning NCP51820 high speed gate driver evaluation board.

Key Points: 
  • OTTAWA and PHOENIX, Nov. 04, 2019 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN power semiconductors and ON Semiconductor , a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems 650 V, 30 A GaN E-HEMTs and ON Semiconductors award-winning NCP51820 high speed gate driver evaluation board.
  • Features, which include 1+ MHz operation and a 200 V/ns CMTI rating, provide increased power density and improved performance with fast-switching GaN power transistors.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

40V, 2.2MHz Synchronous Buck Converters From Diodes Incorporated Deliver High Efficiency Across All Loads

Retrieved on: 
Wednesday, October 30, 2019
Semiconductor, Engineering, Automotive Manufacturing, Technology, Manufacturing, Hardware, Electromagnetism, Electrical engineering, Electronics, Electric power conversion, Voltage regulation, Power electronics, Power supplies, Gate driver, Buck converter, DC-to-DC converter, Diodes Incorporated, MOSFET

Diodes Incorporated (Nasdaq: DIOD) today announced the introduction of five synchronous buck converters with integrated high- and low-side MOSFETs, providing point-of-load (PoL) solutions with a continuous output current of either 3.5A or 5A.

Key Points: 
  • Diodes Incorporated (Nasdaq: DIOD) today announced the introduction of five synchronous buck converters with integrated high- and low-side MOSFETs, providing point-of-load (PoL) solutions with a continuous output current of either 3.5A or 5A.
  • The devices feature proprietary gate driver technology, delivering superior EMI performance in step-down DC-DC conversion for consumer, industrial, networking, and automotive applications.
  • All devices feature low RDS(ON) and operate from a supply voltage of between 3.8V and 40V and provide a low dropout (LDO) mode.
  • As well as the optimized gate driver design, the parts also employ a frequency spread spectrum topology to further reduce EMI.