ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT
Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
- Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
- Along with mass-producing industry-leading SiC devices and a variety of feature-rich silicon devices, ROHM has developed GaN devices featuring superior high-frequency operation in the medium-voltage range.
- Cultivating technology that increases the rated gate-source voltage allows ROHM to propose a wider range of power solutions for a variety of applications.
- In response, ROHM succeeded in raising the rated gate-source voltage from the typical 6V to 8V using an original structure.