Transistors

Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Solutions Now Available at 1700V

Retrieved on: 
Tuesday, July 27, 2021

To meet these requirements, Microchip Technology Inc. (Nasdaq: MCHP) today announced the expansion of its silicon carbide portfolio with a family of high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power modules .

Key Points: 
  • To meet these requirements, Microchip Technology Inc. (Nasdaq: MCHP) today announced the expansion of its silicon carbide portfolio with a family of high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power modules .
  • Microchips 1700V silicon carbide technology is an alternative to silicon IGBTs.
  • The new silicon carbide product family allows engineers to move beyond IGBTs, instead using two-level topologies with reduced part count, greater efficiency and simpler control schemes.
  • Microchips 1700V silicon carbide MOSFET die, discrete and power modules are available now for order in a variety of package options.

Global and China Power Discrete (IGBT + MOSFET) Market (2021 to 2025) - Featuring CR Micro, Star Power and BYD Among Others - ResearchAndMarkets.com

Retrieved on: 
Tuesday, July 27, 2021

The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering.
  • In 2020, the global market value of power discrete devices was US$ 26 billion, which expanded steadily in the past decade, with a CAGR of 6%.
  • The factors driving the market expansion include increasing demand for energy-saving electronic equipment, increasing demand for power products and increasing public awareness of environmental issues/stricter supervision.
  • From 2020 to 2025, the CAGR of industrial control and consumption application in China market will be stable at 2-5%.

Global Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics Research Report 2021 - ResearchAndMarkets.com

Retrieved on: 
Monday, July 26, 2021

The "2021 Growth Opportunities in Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "2021 Growth Opportunities in Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics" report has been added to ResearchAndMarkets.com's offering.
  • This report covers novel innovations related in quantum computing, metal-oxide-semiconductor field-effect transistors (MOSFETs), and docking stations.
  • The TOE also highlights a recent innovation that overcomes challenges in conventional recycling of aluminum.
  • The TOE also features molecular diagnostics for transplant patients.

ROHM Introduces Hybrid IGBTs with Built-In SiC Diode

Retrieved on: 
Monday, July 19, 2021

Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortodayannounced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortodayannounced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode.
  • The RGWxx65C series ( RGW60TS65CHR , RGW80TS65CHR , RGW00TS65CHR ) utilizes ROHMs low-loss SiC Schottky barrier diodes in the IGBT feedback block as a freewheeling diode that has almost no recovery energy, thus minimal diode switching loss.
  • At the same time, the diversification of power semiconductors used in various vehicle inverter and converter circuits necessary to configure more efficient systems is currently underway, along with technological innovation of both ultra-low-loss SiC power devices (i.e., SiC MOSFETs, SiC SBDs) and conventional silicon power devices (e.g., IGBTs, Super Junction MOSFETs).
  • To provide effective power solutions for a wide range of applications, ROHM is focusing not only on product and technology development for industry leading SiC power devices, but also for silicon products and driver ICs.

Meridian Innovation Secures US$8 Million in Funding

Retrieved on: 
Monday, July 12, 2021

Meridian is uniquely positioned to address these emerging markets which are all rapidly adopting low-cost thermal sensors.

Key Points: 
  • Meridian is uniquely positioned to address these emerging markets which are all rapidly adopting low-cost thermal sensors.
  • Meridian Innovation, headquartered in Singapore, is a pioneering developer of advanced Complementary Metal-Oxide-Semiconductor ("CMOS") Thermal Imaging solutions with operations also in Hong Kong, USA and UK.
  • Meridian Innovation is committed to the development of cost effective and high-performance Thermal Imaging Sensor-based solutions for commercial and consumer applications that will enable safer and better living.
  • Combining a proprietary wafer-level vacuum packaging allows Meridian to produce their sensors at lower cost and mass producible volume.

AnalogX Accelerates Time-to-Market with Diakopto's ParagonX™ Debugging Platform and Methodology

Retrieved on: 
Wednesday, June 30, 2021

AnalogX is a leading provider of high-end, ultra-low power SerDes IPs that drive revolutionary SoC designs for high-bandwidth applications.

Key Points: 
  • AnalogX is a leading provider of high-end, ultra-low power SerDes IPs that drive revolutionary SoC designs for high-bandwidth applications.
  • By providing actionable insights to quickly and easily pinpoint bottlenecks and root causes, ParagonX helps AnalogX engineers overcome the growing challenges of layout parasitics in modern FinFET processes.
  • Robert Wang, Co-founder and CEO of AnalogX commented, "ParagonX is a must-have for any company designing high-speed, high-precision or low-power ICs, especially in advanced manufacturing technologies.
  • Our software platform and methodology are designed to deliver easy-to-use, intuitive, and fast functionalities, producing clear, visual, and actionable results.

Strides in Ion Implanter Market Broaden Canvas for Producers of Advanced Materials Using Nanoscience, Technology Attract Attention among Power Electronics Manufacturers: TMR

Retrieved on: 
Monday, June 21, 2021

The fast-paced commercialization of smart electronic products, especially power electronics has spurred the evolution of the ion implanter market .

Key Points: 
  • The fast-paced commercialization of smart electronic products, especially power electronics has spurred the evolution of the ion implanter market .
  • The Covid-19 outbreaks in recent months has led to microeconomic disruptions in the raw material supply and consumer demand.
  • Rise in demand for power semiconductor devices, notably power diodes and power MOFSETs, world over is a key trend boosting the market prospects.
  • For instance, the rise in adoption of ion implantation has enabled electronics companies to benefit from advanced power transistors.

Strides in Ion Implanter Market Broaden Canvas for Producers of Advanced Materials Using Nanoscience, Technology Attract Attention among Power Electronics Manufacturers: TMR

Retrieved on: 
Monday, June 21, 2021

The fast-paced commercialization of smart electronic products, especially power electronics has spurred the evolution of the ion implanter market .

Key Points: 
  • The fast-paced commercialization of smart electronic products, especially power electronics has spurred the evolution of the ion implanter market .
  • The Covid-19 outbreaks in recent months has led to microeconomic disruptions in the raw material supply and consumer demand.
  • Rise in demand for power semiconductor devices, notably power diodes and power MOFSETs, world over is a key trend boosting the market prospects.
  • For instance, the rise in adoption of ion implantation has enabled electronics companies to benefit from advanced power transistors.

ROHM Introduces Industry-first AC/DC Converter ICs in a Surface Mount Package with Built-in 1700V SiC MOSFET

Retrieved on: 
Thursday, June 17, 2021

Santa Clara, CA and Kyoto, Japan, June 17, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday introduced the industrys first* AC/DC converter ICs with a built-in 1700V SiC MOSFET ( BM2SC12xFP2-LBZ ) in the TO263-7L package.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, June 17, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday introduced the industrys first* AC/DC converter ICs with a built-in 1700V SiC MOSFET ( BM2SC12xFP2-LBZ ) in the TO263-7L package.
  • By applying existing Si MOSFET devices, the designer cannot achieve higher efficiency or increased output power because of the higher losses of Si devices.
  • ROHMs BM2SC12xFP2-LBZ power ICs are Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact surface mount package (TO263-7L).
  • At the same time, adopting an SiC MOSFET improves power efficiency by up to 5% and minimizes the risk of component failure.

Key Foundry Offers ABOV Semiconductor Gen2 Flash Memory Embedded 0.13 micron BCD Process Suitable for Automotive Power Semiconductor

Retrieved on: 
Wednesday, June 16, 2021

SEOUL, South Korea, June 16, 2021 /PRNewswire/ --Key Foundry, the only pure-play foundry in Korea, announced today that it now offers ABOV Semiconductor (ABOV) its Gen2 flash memory embedded 0.13 micron BCD (Bipolar-CMOS-DMOS) process suitable for automotive power semiconductor.

Key Points: 
  • SEOUL, South Korea, June 16, 2021 /PRNewswire/ --Key Foundry, the only pure-play foundry in Korea, announced today that it now offers ABOV Semiconductor (ABOV) its Gen2 flash memory embedded 0.13 micron BCD (Bipolar-CMOS-DMOS) process suitable for automotive power semiconductor.
  • The Gen2 flash memory embedded 0.13 micron BCD process offers highly integrated 1.5 V logic, 8 ~ 40 V LDMOS for power and 64K byte embedded flash memory.
  • ABOV developed a UFC (Universal Fast Charger) MCU using Key Foundry's Gen2 flash memory embedded 0.13 micron BCD process.
  • "We are pleased to offer ABOV our Gen2 flash memory embedded 0.13 micron BCD suitable for automotive power semiconductor amid the rapidly growing automotive semiconductor market," said Dr. Tae Jong Lee, CEO of Key Foundry.