High-electron-mobility transistor

Teledyne e2v HiRel Releases Catalog Radiation Tolerant S-Band (2 GHz to 5 GHz) Ultra-Low Noise Amplifier for Space Applications

Retrieved on: 
Wednesday, March 6, 2024

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20240306331700/en/
    Teledyne e2v HiRel Rad Tolerant S-Band LNA, TDLNA2050SEP (Photo: Business Wire)
    The TDLNA2050SEP LNA leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver exceptional performance in the S-band communication channel.
  • The TDLNA2050SEP amplifier delivers a gain of 17.5 dB from 2 GHz to 5 GHz while maintaining a noise figure of less than 0.4 dB and an output power (P1dB) of 19.5 dBm.
  • “Today, we’re releasing our latest LNA, optimized for space and radar applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
  • For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

Teledyne e2v HiRel Releases Single-Supply, Radiation-Tolerant, UHF to S-Band (0.3 GHz to 3 GHz), Ultra-Low Noise Amplifier for Space Applications

Retrieved on: 
Tuesday, January 30, 2024

Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.

Key Points: 
  • Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.
  • This new LNA is developed on a 90nm enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) process.
  • “Today we’re releasing our latest plastic space qualified LNA for harsh environment applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
  • For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

ITRI and Oxford Instruments Signed Agreement to Collaborate on Compound Semiconductors

Retrieved on: 
Sunday, October 3, 2021

HSINCHU, Taiwan, Oct. 2, 2021 /PRNewswire/ --ITRI and Oxford Instruments signed a cooperative research project on the development of next-gen compound semiconductors on September 24, under the witness of the officials of the Department of Industrial Technology (DoIT), Ministry of Economic Affairs (MOEA).

Key Points: 
  • HSINCHU, Taiwan, Oct. 2, 2021 /PRNewswire/ --ITRI and Oxford Instruments signed a cooperative research project on the development of next-gen compound semiconductors on September 24, under the witness of the officials of the Department of Industrial Technology (DoIT), Ministry of Economic Affairs (MOEA).
  • ITRI Executive Vice President Pei-Zen Chang remarked that ITRI is an important stronghold of Oxford Instruments in the Asia-Pacific region.
  • Chief Executive Officer of Oxford Instruments Ian Barkshire expressed his appreciation for the ongoing strengthening of the relationship between Oxford instruments and ITRI.
  • With the new agreement signed, Oxford Instruments and ITRI will combine the innovation, technological and end-market knowledge to drive the advances in semiconductor and power devices that will enable a greener, healthier, more connected, advanced and sustainable society.

ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

Retrieved on: 
Thursday, May 27, 2021

Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
  • Along with mass-producing industry-leading SiC devices and a variety of feature-rich silicon devices, ROHM has developed GaN devices featuring superior high-frequency operation in the medium-voltage range.
  • Cultivating technology that increases the rated gate-source voltage allows ROHM to propose a wider range of power solutions for a variety of applications.
  • In response, ROHM succeeded in raising the rated gate-source voltage from the typical 6V to 8V using an original structure.

Mitsubishi Electric to Expand Product Range of Ku-band GaN HEMTs

Retrieved on: 
Thursday, February 18, 2021

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.7514.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the companys GaN HEMT lineup for satellite-communication (SATCOM) earth stations.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.7514.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the companys GaN HEMT lineup for satellite-communication (SATCOM) earth stations.
  • The two products, one for multi-carrier1 communication and the other for single-carrier2 communication, will support increased data-transmission capacity and smaller earth stations.
  • So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations.
  • The two new 30W GaN HEMTs will enable more flexible amplifier designs, including for rated power levels and the use of GaN drivers.

Teledyne e2v HiRel Unveils Two High Power GaN HEMTs to its 650 V Family

Retrieved on: 
Wednesday, January 6, 2021

Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of products based on GaN Systems technology.

Key Points: 
  • Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of products based on GaN Systems technology.
  • View the full release here: https://www.businesswire.com/news/home/20210106005862/en/
    Teledyne HiRel's two new GaN HEMTs added to its 650 V Family.
  • These 650 V GaN HEMTs are the highest voltage GaN power devices available on the market for demanding high-reliability military, avionics, and space applications.
  • We are pleased to continue the build-out of our 650 V family of high power GaN HEMTs for applications requiring the highest reliability such as space, said Mont Taylor, VP of Business Development for Teledyne e2v HiRel.

GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%

Retrieved on: 
Wednesday, December 16, 2020

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

Key Points: 
  • GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
  • GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of todays most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

Sanan IC Announces Enhanced Foundry Platform for Wide Bandgap Power Semiconductor Industry

SUNNYVALE, Calif., April 21, 2020 (GLOBE NEWSWIRE) -- SANAN INTEGRATED CIRCUIT CO., LTD. (Sanan IC), a world-class wafer foundry with an advanced compound semiconductor technology platform , today announced worldwide access to its growing portfolio of advanced, wide bandgap power electronics foundry services for 650V and 1200V silicon carbide (SiC) devices, and 650V gallium nitride (GaN) power high-electron-mobility-transistors (HEMT).

Key Points: 
  • SUNNYVALE, Calif., April 21, 2020 (GLOBE NEWSWIRE) -- SANAN INTEGRATED CIRCUIT CO., LTD. (Sanan IC), a world-class wafer foundry with an advanced compound semiconductor technology platform , today announced worldwide access to its growing portfolio of advanced, wide bandgap power electronics foundry services for 650V and 1200V silicon carbide (SiC) devices, and 650V gallium nitride (GaN) power high-electron-mobility-transistors (HEMT).
  • Sanan ICs parent company, Sanan Optoelectronics Co., Ltd., has extensive high-volume compound semiconductor manufacturing experience, which inspired us to start building our own line of wide bandgap semiconductor technologies for power electronics, says Raymond Cai, CEO of Sanan IC.
  • Moreover, we recognize that the power industry needs access to cutting edge foundry services.
  • Sanan Integrated Circuit Co., Ltd. (Sanan IC) is Chinas first 6-inch compound semiconductor wafer foundry, serving the microelectronics and photonics markets worldwide.

2019 Report on 200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver - ResearchAndMarkets.com

Retrieved on: 
Monday, March 16, 2020

The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.
  • This report includes a technology and cost comparison of this unique EPC2112 device with the monolithic GaN solution proposed by Navitas.
  • Finally, this report provides a comparison of EPC2112 with the previous 200V EPC GaN device, the EPC2010.
  • This new Integrated Gate Driver eGaN IC design consists of a 40-m, 200V eGaN power transistor and an optimized gate driver in a low inductance surface mount Ball Grid Array (BGA) package.

200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver

Retrieved on: 
Monday, March 2, 2020

DUBLIN, March 2, 2020 /PRNewswire/ -- The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, March 2, 2020 /PRNewswire/ -- The "200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.
  • Finally, this report provides a comparison of EPC2112 with the previous 200V EPC GaN device, the EPC2010.
  • The device is an enhancement-mode gallium-nitride (eGaN) single Field Effect Transistor (FET) with a Gate Driver Integrated Circuit (IC).
  • This new Integrated Gate Driver eGaN IC design consists of a 40-m, 200V eGaN power transistor and an optimized gate driver in a low inductance surface mount Ball Grid Array (BGA) package.