Floating-gate MOSFET

Kioxia Develops New 3D Semicircular Flash Memory Cell Structure “Twin BiCS FLASH”

Retrieved on: 
Thursday, December 12, 2019
Semiconductor, Data management, Technology, Manufacturing, Other Manufacturing, Hardware, Computer storage devices, Computer data storage, Non-volatile memory, Computer memory, Transistors, MOSFETs, Flash memory, Solid-state drive, Memory cell, Floating-gate MOSFET, Cell

Kioxia Corporation today announced the development of the worlds first[1] three-dimensional (3D) semicircular split-gate flash memory cell structure Twin BiCS FLASH using specially designed semicircular Floating Gate (FG) cells.

Key Points: 
  • Kioxia Corporation today announced the development of the worlds first[1] three-dimensional (3D) semicircular split-gate flash memory cell structure Twin BiCS FLASH using specially designed semicircular Floating Gate (FG) cells.
  • To overcome this problem, Kioxia developed a new semicircular cell design by splitting the gate electrode in the conventional circular cell to reduce cell size compared to the conventional circular cell, enabling higher-density memory at a lower number of cell layers.
  • Going forward, Kioxias research and development efforts aimed at innovation in flash memory will include continuing Twin BiCS FLASH development and seeking its practical applications.
  • Kioxia's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers.