Kioxia Develops New 3D Semicircular Flash Memory Cell Structure “Twin BiCS FLASH”
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Thursday, December 12, 2019
Kioxia Corporation today announced the development of the worlds first[1] three-dimensional (3D) semicircular split-gate flash memory cell structure Twin BiCS FLASH using specially designed semicircular Floating Gate (FG) cells.
Key Points:
- Kioxia Corporation today announced the development of the worlds first[1] three-dimensional (3D) semicircular split-gate flash memory cell structure Twin BiCS FLASH using specially designed semicircular Floating Gate (FG) cells.
- To overcome this problem, Kioxia developed a new semicircular cell design by splitting the gate electrode in the conventional circular cell to reduce cell size compared to the conventional circular cell, enabling higher-density memory at a lower number of cell layers.
- Going forward, Kioxias research and development efforts aimed at innovation in flash memory will include continuing Twin BiCS FLASH development and seeking its practical applications.
- Kioxia's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers.