Plessey Chooses AIX G5+ C MOCVD Tool for GaN-on-Silicon Monolithic MicroLEDs Display Innovation
The AIX G5+C metal organic chemical vapour deposition (MOCVD) reactor will boost Plessey's manufacturing capability of gallium nitride on silicon (GaN-on-Si) wafers targeting next-generation microLED applications.
- The AIX G5+C metal organic chemical vapour deposition (MOCVD) reactor will boost Plessey's manufacturing capability of gallium nitride on silicon (GaN-on-Si) wafers targeting next-generation microLED applications.
- The AIX G5+C reactor will support Plessey's extensive production roadmap to increase R&D capacity of its monolithic microLEDs based on its proprietary GaN-on-Si technology.
- Plessey's mission is to become the world's leading company developing innovative illuminators for display engines and full-field emissive microLED displays.
- Mike Snaith, Chief Operating Officer at Plessey, explained: "Our continued and valuable relationship with AIXTRON allows Plessey to rapidly bring to market its monolithic microLEDs.