Non-volatile random-access memory

Renesas Unveils Processor Roadmap for Next-Gen Automotive SoCs and MCUs

Retrieved on: 
Tuesday, November 7, 2023
Software, Vehicle Technology, Hardware, Electronic Design Automation, Technology, Autonomous Driving, Vehicles, Automotive, Artificial Intelligence, Semiconductor, Engineering, Automotive Manufacturing, Manufacturing, DCU Center, Electronics Corporation of India Limited, OEM, Car, High Performance Computing Modernization Program, ADAS, MCU, Socs, Multimedia, Senior, Tier 1, Environment, Software design, Analog, Supercomputer, ECU, SOC, Renesas Electronics, Arm, AI, Investment, IP, Communication, Non-volatile random-access memory, NVM, Advanced driver-assistance system, Nevada-California-Oregon Railway Co. General Office Building, Video game

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today laid out plans for its next-generation system on chips (SoCs) and microcontrollers (MCUs) targeting all major applications across the automotive digital domain.

Key Points: 
  • Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today laid out plans for its next-generation system on chips (SoCs) and microcontrollers (MCUs) targeting all major applications across the automotive digital domain.
  • These MCUs are expected to close the performance gap between traditional MCUs and the advanced R-Car SoCs.
  • This expansion will allow Renesas to standardize IP between MCUs and SoCs, thus increasing software usability and preserving engineering investments for its customers.
  • Renesas plans to release new products subsequently from 2024 onward, following this roadmap.

World Next Generation Memory Market Growth, Trends, COVID-19 Impact and Forecasts (2021 - 2026): Increasing Demand for Enterprise Storage Applications - ResearchAndMarkets.com

Retrieved on: 
Thursday, July 22, 2021
Technology, Data management, Computer memory, Emerging technologies, Computer data storage, Computer storage devices, Non-volatile memory, Computer data, Non-volatile random-access memory, Spintronics, Magnetoresistive RAM, Resistive random-access memory, Ferroelectric RAM, Random-access memory

The "Next Generation Memory Market - Growth, Trends, COVID-19 Impact, and Forecasts (2021 - 2026)" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Next Generation Memory Market - Growth, Trends, COVID-19 Impact, and Forecasts (2021 - 2026)" report has been added to ResearchAndMarkets.com's offering.
  • The emerging non-volatile memory technologies, such as MRAM, STT-RAM, FRAM, phase-change memory (PCM), and ReRAM combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory.
  • Moreover, the adoption of next-generation infotainment systems and ADAS would be fusing the DRAM memory technologies that would have much higher performance and low power consumption capabilities.
  • Increasing demand for enterprise storage applications is driving the market.

CrossBar Announces New ReRAM Application for Hardware Security and Secure Computing

Retrieved on: 
Tuesday, July 20, 2021
Computer memory, Technology, Computing, Emerging technologies, Non-volatile random-access memory, Science and technology, Resistive random-access memory, Computer hardware, Digital electronics, Hardware security, Random-access memory, Types of physical unclonable function

While historically utilized as non-volatile semiconductor memory, CrossBar's ReRAM technology in now being introduced for use in hardware security applications utilizing its ReRAM based cryptographic PUF keys, enabling a more secure and cost-effective class of devices and systems.

Key Points: 
  • While historically utilized as non-volatile semiconductor memory, CrossBar's ReRAM technology in now being introduced for use in hardware security applications utilizing its ReRAM based cryptographic PUF keys, enabling a more secure and cost-effective class of devices and systems.
  • The ReRAM keys are unique to each individual semiconductor integrated circuit (IC), leveraging the inherent randomness characteristics of the ReRAM technology.
  • "Due to its unique stochastic and electrical characteristics, CrossBar's ReRAM PUF enables significantly more secure systems compared to incumbent PUF technologies."
  • CrossBar's new ReRAM PUF technology is enabling a new class of secure computing, addressing many of the deficiencies of alternative PUF implementations.

Weebit completes design and tape-out of embedded ReRAM module

Retrieved on: 
Wednesday, July 14, 2021
Technology, Computing, Science and technology, Emerging technologies, Computer memory, Non-volatile random-access memory, Resistive random-access memory, Hardware acceleration, Trademark, System on a chip

The test chip containing this module will allow Weebit to demonstrate to customers a fully functional ReRAM product that can be readily integrated into their System-on-Chip and enable customers to accelerate their design process.

Key Points: 
  • The test chip containing this module will allow Weebit to demonstrate to customers a fully functional ReRAM product that can be readily integrated into their System-on-Chip and enable customers to accelerate their design process.
  • We congratulate Weebit on taping out its ReRAM module design, which provides strong validation of the feasibility of this technology for the power domain.
  • Weebit expects to have its first silicon of the embedded ReRAM module towards the end of this year.
  • Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries.

Fujitsu Starts Mass-production of 4Mbit FRAM with 125 degrees C Operation Conforming to Automotive Grade

Retrieved on: 
Tuesday, July 6, 2021
Computer memory, Computing, Technology, Emerging technologies, Computer data storage, Non-volatile memory, Non-volatile random-access memory, Resistive random-access memory, Ferroelectric RAM, Semiconductor memory, Fujitsu, Read-only memory

Since mass-production of FRAM products capable to operate up to 125 degrees C started in July 2017, its product lineup has been expanding.

Key Points: 
  • Since mass-production of FRAM products capable to operate up to 125 degrees C started in July 2017, its product lineup has been expanding.
  • This time the 4Mbit FRAM MB85RS4MTY, which has the largest density in the 125 degrees C -operating FRAM product family, is added to mass-production this month.
  • Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.
  • Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memories like Ferroelectric Random-Access Memory (FRAM) and Resistive Random-Access Memory (ReRAM).

Global Magneto Resistive RAM (MRAM) Market to Reach $1.3 Billion by 2026

Retrieved on: 
Friday, June 25, 2021
Computer memory, Emerging technologies, Non-volatile memory, Computer storage devices, Computer data storage, Computer data, Spintronics, Non-volatile random-access memory, Magnetoresistive RAM, Resistive random-access memory, Random-access memory

SAN FRANCISCO, June 25, 2021 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Magneto Resistive RAM (MRAM) - Global Market Trajectory & Analytics" .

Key Points: 
  • SAN FRANCISCO, June 25, 2021 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Magneto Resistive RAM (MRAM) - Global Market Trajectory & Analytics" .
  • Preview Registry
    MRAM or Magneto Resistive Ram represents a non-volatile random access memory for storing bits of data.
  • Amid the COVID-19 crisis, the global market for Magneto Resistive RAM (MRAM) estimated at US$254.1 Million in the year 2020, is projected to reach a revised size of US$1.3 Billion by 2026, growing at a CAGR of 32.1% over the analysis period.
  • This segment currently accounts for a 23.8% share of the global Magneto Resistive RAM (MRAM) market.

Weebit Nano successfully demonstrates integration of selector with ReRAM cell for the stand-alone memory market

Retrieved on: 
Friday, June 25, 2021
Computer memory, Technology, Computing, Digital electronics, MOSFETs, Emerging technologies, Science and technology, Non-volatile random-access memory, Resistive random-access memory, Random-access memory, Semiconductor memory

A selector is a key element of a memory chip, enabling optimised cell access within a memory array.

Key Points: 
  • A selector is a key element of a memory chip, enabling optimised cell access within a memory array.
  • Weebits combination of ReRAM with an OTS selector promises to scale to the advanced processes and high memory densities that new memory chips will need.
  • Coby Hanoch, CEO of Weebit, said, This achievement demonstrates our commitment to addressing the discrete memory market as part of our mid-term strategy.
  • Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries.

The Latest in Memory Technology Trends from TechInsights and Jeongdong Choe

Retrieved on: 
Thursday, June 24, 2021
Technology, Computing, Computer data storage, Computer memory, Emerging technologies, Non-volatile memory, Non-volatile random-access memory, Spintronics, Magnetoresistive RAM, Ferroelectric RAM, 3D XPoint, Semiconductor industry

Ottawa, Ontario--(Newsfile Corp. - June 24, 2021) - TechInsights announces that Dr. Jeongdong Choe will be presenting a webinar titled: Memory Technology Highlights from TechInsights 2021.

Key Points: 
  • Ottawa, Ontario--(Newsfile Corp. - June 24, 2021) - TechInsights announces that Dr. Jeongdong Choe will be presenting a webinar titled: Memory Technology Highlights from TechInsights 2021.
  • TechInsights has been tracking down and digging into them, including technology trends and innovative process and design changes on DRAM, NAND Flash, and emerging memory devices such as STT-MRAM, ReRAM, FeRAM and 3D XPoint Memory.
  • Dr. Jeongdong Choe, one of the world's foremost experts on advanced memory technology devices, will provide an overview of the latest developments from Samsung, Micron, SK Hynix, Western Digital, KIOXIA, YMTC, Intel, Sony, and others.
  • TechInsights maintains the world's largest database of semiconductor and advanced technology analysis and is dedicated to building the content platform for the semiconductor industry.

sureCore & Intrinsic Announce Collaboration to Bring Novel RRAM Technology to Market

Retrieved on: 
Thursday, June 10, 2021
Semiconductor, Hardware, Nanotechnology, Data management, Technology, Computer memory, Emerging technologies, Non-volatile random-access memory, Articles, Resistive random-access memory, Computer data storage, Intrinsics, Intrinsic and extrinsic properties, Metaphysics, sureCore, Intrinsic, SURECORE, INTRINSIC

sureCore Limited and Intrinsic Ltd today announced a collaboration agreement to bring high performance embedded RRAM to market.

Key Points: 
  • sureCore Limited and Intrinsic Ltd today announced a collaboration agreement to bring high performance embedded RRAM to market.
  • Intrinsic and sureCore are collaborating to deliver commercial memory solutions using sureCores patented memory architectures and Intrinsics novel RRAM cell.
  • Mark Dickenson, CEO Intrinsic, commented, Our RRAM technology provides a step change in performance and power metrics compared to existing solutions.
  • Paul Wells, CEO sureCore, said, I think Intrinsic have created something special here and its a privilege for us to be able to work together to bring the technology to market in a timely manner.

Weebit Nano and Silvaco to Present Latest ReRAM Modeling Developments at IMW 2021

Retrieved on: 
Tuesday, May 11, 2021
Emerging technologies, Computer memory, Non-volatile random-access memory, Resistive random-access memory, Silvaco, Leti, Nano, Technology, Computing, Science and technology

Sponsored by the IEEE Electron Devices Society, IMW is the premier international forum for technologists to share and learn about new developments in memory technology.

Key Points: 
  • Sponsored by the IEEE Electron Devices Society, IMW is the premier international forum for technologists to share and learn about new developments in memory technology.
  • The conference will be held virtually May 16 -19, 2021.\nThe IMW presentation is based on work described in a new paper from Silvaco, Weebit, and CEA-Leti, \xe2\x80\x9cA Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification,\xe2\x80\x9d which explores new predictive and physics-based TCAD simulations for modeling Oxide-based ReRAM.
  • The work goes beyond previous ReRAM modeling attempts by accounting for the impact of current compliance on the device characteristics.
  • See: www.weebit-nano.com .\nWeebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries.