Phase-change memory

Global ICs Market Analysis and Forecasts to 2025: Artificial Intelligence (AI), 5G, CMOS Image Sensors, and Memory Chips

Retrieved on: 
Thursday, April 22, 2021
Computer memory, Technology, Digital electronics, Computing, Emerging technologies, Science and technology, MOSFETs, Non-volatile random-access memory, Phase-change memory, Magnetoresistive RAM, Random-access memory, Semiconductor memory

It is likely that on the show floor and in conference presentations we will see new uses for these AI-driven vehicles.

Key Points: 
  • It is likely that on the show floor and in conference presentations we will see new uses for these AI-driven vehicles.
  • The report details storage and memory products including those using traditional (NAND and DRAM) memories and emerging memories, such as phase change memory (PCM), magnetic random access memory (MRAM) or resistive random access memory.
  • With the end of Moore\'s-law computer-lithography scaling, there is also a move to more specialized processing capability, tied to particular applications.\nThis report examines in detail Artificial Intelligence (AI), 5G, CMOS Image Sensor, and Memory Chips (DRAM, NAND, NVM).
  • Markets for the ICs and their applications are forecast to 2025, and market shares given in each sector.\n'

Worldwide Phase Change Memory Industry to 2026 - by Technology, Application and Geography

Retrieved on: 
Tuesday, April 20, 2021
Computer memory, Computing, Non-volatile random-access memory, Computer data storage, Technology, Non-volatile memory, 3D XPoint, Phase-change memory, Intel, Microcontroller, NVDIMM

Phase Change Memory, known as a non-volatile memory, that stores and saves data by changing and altering the state of a material.

Key Points: 
  • Phase Change Memory, known as a non-volatile memory, that stores and saves data by changing and altering the state of a material.
  • For Instance, Intel, one of the major players in the market, had been shipping and selling a device known as 3D XPoint, next-generation memory storage, based on phase change.
  • The company is expected to use phase change memory storage solutions, in their smartphones in the coming years, as the company moves towards premium products.
  • With the adoption of novel microcontrollers, the phase change memory market will register supplementary growth in the coming years\n'

Global Phase Change Memory Market (2021 to 2026) - Featuring Micron Technology, IBM and Intel Among Others - ResearchAndMarkets.com

Retrieved on: 
Thursday, April 15, 2021
Technology, Other Technology, Computer memory, Computing, Computer data storage, Non-volatile random-access memory, Computer data, Non-volatile memory, Emerging technologies, 3D XPoint, Intel, Phase-change memory, Computer architecture, NVDIMM

The next-generation market will register supplementary growth, during the forecast period, as major companies have been trying to capture significant market share, in the crowded embedded storage space market.

Key Points: 
  • The next-generation market will register supplementary growth, during the forecast period, as major companies have been trying to capture significant market share, in the crowded embedded storage space market.
  • Phase Change Memory, known as a non-volatile memory, that stores and saves data by changing and altering the state of a material.
  • For Instance, Intel, one of the major players in the market, had been shipping and selling a device known as 3D XPoint, next-generation memory storage, based on phase change.
  • The phase change memory market is a novel and emerging market and is expected to register significant growth in the coming years\n'

Global Phase Change Memory Industry (2020 to 2027) - Key Market Trends and Drivers - ResearchAndMarkets.com

Retrieved on: 
Tuesday, March 2, 2021
Software, Technology, Data management, Computer memory, Computer data storage, Computer data, Flash memory, Non-volatile memory, Phase-change memory, Computing

The "Phase Change Memory - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Phase Change Memory - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The 142-page report presents concise insights into how the pandemic has impacted production and the buy side for 2020 and 2021.
  • The U.S. Market is Estimated at $111.3 Million, While China is Forecast to Grow at 83.2% CAGR
    The Phase Change Memory market in the U.S. is estimated at US$111.3 Million in the year 2020.
  • In the global PCM As Flash Memory segment, USA, Canada, Japan, China and Europe will drive the 60.3% CAGR estimated for this segment.

Intermolecular Defines ALD Process for Efficient Composition Tuning of 3D Crosspoint NVM Selectors

Retrieved on: 
Tuesday, July 10, 2018
Chemistry, Non-volatile random-access memory, Computer memory, Emerging technologies, Computer data storage, Computing, Atomic layer deposition, Semiconductor device fabrication, Thin film deposition, Tellurium, Phase-change memory, Resistive random-access memory

SAN JOSE, Calif., July 10, 2018 /PRNewswire/ -- Intermolecular, Inc. (NASDAQ: IMI), the trusted partner for advanced materials innovation, today announced a new defined ALD (Atomic Layer Deposition) process of Tellurium (Te), allowing for more efficient composition tuning for 3D crosspoint NVM selectors.

Key Points: 
  • SAN JOSE, Calif., July 10, 2018 /PRNewswire/ -- Intermolecular, Inc. (NASDAQ: IMI), the trusted partner for advanced materials innovation, today announced a new defined ALD (Atomic Layer Deposition) process of Tellurium (Te), allowing for more efficient composition tuning for 3D crosspoint NVM selectors.
  • "Non-volatile memory (NVM) technologies such as resistive random access memory (RRAM) or phase change memory (PCM) has shown the potential in next generation data storage applications.
  • "With our defined process, for the first time, ALD of elemental tellurium can be used to tune the composition to realize vertically integrated 3D crosspoint memory."
  • Intermolecular has leveraged its accelerated High-Throughput Experimentation (HTE) platform to rapidly develop a conformal elemental Te ALD process to tune the composition in various OTS pertinent films.