GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

Metadata

Provider:

Newsfile

Retrieved on:

Wednesday, December 16, 2020

Information

Tags:

Electronics industry, Electrical engineering, Information and communications technology, Gallium nitride, Nitrides, Field-effect transistors, High-electron-mobility transistor, Transistor, Consumer electronics, Electric power system, Automotive electronics

Geotags:

Ottawa, ONTARIO

Organisation:

REPORTABLE, INC.

Summary

Key Points:

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of todays most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics.
As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

Ottawa, Ontario--(Newsfile Corp. - December 16, 2020) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

To view the full announcement, including downloadable images, bios, and more, click here.

Key Takeaways:

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
The platform features significantly improved heat transfer making it an ideal reference for implementing smaller and lower cost systems at the same power level or alternatively increasing output power by 30% in the same size.
The platform consists of the IMS3 motherboard and a half-bridge power board, which is available in two power levels up to 3 kW and up to 6 kW.

Click image above to view full announcement.

About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics. As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn and scan this QR code for our WeChat.

Contacts:

Mary Placido
4152183627
[email protected]

Source: GaN Systems

To view the source version of this press release, please visit https://www.newsfilecorp.com/release/70417