Field-effect transistors

EPC Space Announces Cost Effective New 60 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications

Retrieved on: 
Wednesday, July 28, 2021
Other Manufacturing, Technology, Semiconductor, Engineering, Satellite, Other Technology, Aerospace, Manufacturing, Hardware, Chemistry, Physical sciences, Natural sciences, Integrated circuits, Chemical elements, Inorganic compounds, Gallium nitride, Nitrides, Field-effect transistors, Radiation hardening, Transistor, Gallium

EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET.

Key Points: 
  • EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET.
  • The EPC7014UB , is a 60 V, 580 m, 4 APulsed, rad-hard eGaN FET in an industry standard UB package.
  • GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, lower cost, and greater power densities than achievable with rad hard silicon, said Bel Lazar, CEO of EPC Space.
  • EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Global Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics Research Report 2021 - ResearchAndMarkets.com

Retrieved on: 
Monday, July 26, 2021
Technology, Semiconductor, Transistors, Electronics industry, Semiconductor devices, MOSFETs, Field-effect transistors, Digital electronics, Integrated circuits, QFET

The "2021 Growth Opportunities in Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "2021 Growth Opportunities in Quantum Technology, MOSFET, Aluminum Recycling, and Molecular Diagnostics" report has been added to ResearchAndMarkets.com's offering.
  • This report covers novel innovations related in quantum computing, metal-oxide-semiconductor field-effect transistors (MOSFETs), and docking stations.
  • The TOE also highlights a recent innovation that overcomes challenges in conventional recycling of aluminum.
  • The TOE also features molecular diagnostics for transplant patients.

EPC Expands High-Performance eGaN® FET Product Family with Latest 80 V and 200 V Offerings

Retrieved on: 
Tuesday, June 15, 2021
Engineering, Semiconductor, Consumer electronics, Technology, Manufacturing, Mobile, Wireless, Hardware, Electronics industry, Inventions, Semiconductor devices, Field-effect transistors, Digital electronics, Integrated circuit, Chip-scale package

The EPC2065 is an 80 V, 3.6 m, 221 Apulsed eGaN FET in a 7.1 mm2 chip-scale package.

Key Points: 
  • The EPC2065 is an 80 V, 3.6 m, 221 Apulsed eGaN FET in a 7.1 mm2 chip-scale package.
  • In these applications the driver is integrated with the motor and miniaturization is a key factor.
  • The ability to operate with significantly shorter dead times results in less noise and less EMI.
  • The EPC2054 is a 200 V, 3.6 m, eGaN FET in a tiny 1.69 mm2 chip-scale package.

EPC to Showcase High Power Density Solutions Using eGaN® FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition

Retrieved on: 
Thursday, June 3, 2021
Technology, Hardware, Semiconductor, Telecommunications, Chemistry, Physical sciences, Natural sciences, Nitrides, Efficient Power Conversion, Field-effect transistors, Gallium nitride, Gallium, Gan

The EPC team will be delivering multiple technical presentations, an educational tutorial, and an exhibitor webinar on gallium nitride (GaN) technology and applications at the upcoming Applied Power Electronics Conference (APEC) Virtual Conference + Exposition , June 14-17.

Key Points: 
  • The EPC team will be delivering multiple technical presentations, an educational tutorial, and an exhibitor webinar on gallium nitride (GaN) technology and applications at the upcoming Applied Power Electronics Conference (APEC) Virtual Conference + Exposition , June 14-17.
  • In addition, the company will participate in the events virtual exhibition, showing its latest eGaN FETs and ICs in customers end products that are rapidly adopting eGaN technology.
  • EPC is the leader in enhancement mode gallium nitride (eGaN) based power management.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20210603005149/en/

ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

Retrieved on: 
Thursday, May 27, 2021
Materials, Electronics industry, Chemistry, Field-effect transistors, MOSFETs, High-electron-mobility transistor, Terahertz technology, Gallium nitride, Silicon carbide

Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, May 27, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortoday announced it has developed the industrys highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
  • Along with mass-producing industry-leading SiC devices and a variety of feature-rich silicon devices, ROHM has developed GaN devices featuring superior high-frequency operation in the medium-voltage range.
  • Cultivating technology that increases the rated gate-source voltage allows ROHM to propose a wider range of power solutions for a variety of applications.
  • In response, ROHM succeeded in raising the rated gate-source voltage from the typical 6V to 8V using an original structure.

Silanna Semiconductor Launches World-Class 65W Active Clamp Flyback (ACF) USB-C PD GaN Adapter Solution

Retrieved on: 
Thursday, March 11, 2021
Electronics industry, Chemistry, Inventions, Field-effect transistors, Semiconductor devices, Gallium nitride, Nitrides, Transistor, Gan

SAN DIEGO, March 11, 2021 /PRNewswire-PRWeb/ -- Silanna Semiconductor , The Power Density Leader, today announced their partnership with GaN Systems by launching a co-designed, world-class 65W USB-C GaN (gallium nitride) charger featuring Silanna Semiconductor's Fully Integrated Active Clamp Flyback PWM Controller, the SZ1130 with GaN System 's 650V Power GaN Transistor.

Key Points: 
  • SAN DIEGO, March 11, 2021 /PRNewswire-PRWeb/ -- Silanna Semiconductor , The Power Density Leader, today announced their partnership with GaN Systems by launching a co-designed, world-class 65W USB-C GaN (gallium nitride) charger featuring Silanna Semiconductor's Fully Integrated Active Clamp Flyback PWM Controller, the SZ1130 with GaN System 's 650V Power GaN Transistor.
  • The full production of Silanna's Active Clamp Flyback (ACF) controllers started in mid-2020 and is continuing to enable higher efficiency and higher power density adapter designs.
  • The versatility of Silanna Semiconductor's ACF controller allows design flexibility for the end-user to select their preferred FET technology within their reference design.
  • The new 65W USB-C GaN charger reference design utilizes Silanna Semiconductor's SZ1130 Fully Integrated ACF PWM controller, with the high-side FET integrated into the controller.

Mitsubishi Electric to Expand Product Range of Ku-band GaN HEMTs

Retrieved on: 
Thursday, February 18, 2021
Semiconductor, Technology, Satellite, Mobile, Wireless, Telecommunications, Hardware, Electronics industry, Information and communications technology, Electronics, MOSFETs, Field-effect transistors, High-electron-mobility transistor, Terahertz technology, Nitrides, Transistor, Gallium nitride, Amplifier, Satcom

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.7514.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the companys GaN HEMT lineup for satellite-communication (SATCOM) earth stations.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.7514.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the companys GaN HEMT lineup for satellite-communication (SATCOM) earth stations.
  • The two products, one for multi-carrier1 communication and the other for single-carrier2 communication, will support increased data-transmission capacity and smaller earth stations.
  • So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations.
  • The two new 30W GaN HEMTs will enable more flexible amplifier designs, including for rated power levels and the use of GaN drivers.

JEDEC Wide Bandgap Power Semiconductor Committee Publishes New Test Method for Continuous-Switching Evaluation of GaN Power Conversion Devices

Retrieved on: 
Tuesday, January 26, 2021
Electronic design automation, Semiconductor, Consumer electronics, Technology, Other Technology, Mobile, Wireless, Hardware, Chemistry, Physical sciences, Materials, Nitrides, Gallium nitride, Field-effect transistors, Semiconductor, Transistor, Silicon carbide, Wide-bandgap semiconductor, Aristos Christou, JC-70, JEDEC

Developed by JEDECs JC-70 Committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEP182 is available for free download from the JEDEC website .

Key Points: 
  • Developed by JEDECs JC-70 Committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEP182 is available for free download from the JEDEC website .
  • To enable the successful adoption of GaN power transistors, both reliable operation in power conversion applications and switching lifetime need to be demonstrated.
  • Existing test methods for Safe Operating Area (SOA) of silicon power transistors are not sufficient for full characterization of GaN power transistors.
  • Committee members include industry leaders in power GaN and SiC semiconductors, as well as users of wide bandgap power devices, and test and measurement equipment suppliers.

Efficient Power Conversion (EPC) Launches 40 V eGaN® FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Retrieved on: 
Thursday, December 17, 2020
Technology, Engineering, Automotive Manufacturing, Other Energy, Manufacturing, Alternative Vehicles, Fuels, Automotive, Alternative energy, Energy, Other Technology, Hardware, Other Manufacturing, Electronic design automation, Performance & Special Interest, Electronics industry, Chemistry, Physical sciences, Semiconductor devices, Field-effect transistors, MOSFETs, Alex Lidow, Inorganic compounds, Transistor, Gallium nitride, Depletion and enhancement modes, Gallium

Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.

Key Points: 
  • Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.
  • This device is ideal for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters.
  • According to Alex Lidow, EPCs co-founder and CEO, The EPC2055 is a very good example of the rapid evolution of GaN FET technology.
  • eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20201217005215/en/

GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%

Retrieved on: 
Wednesday, December 16, 2020
Electronics industry, Electrical engineering, Information and communications technology, Gallium nitride, Nitrides, Field-effect transistors, High-electron-mobility transistor, Transistor, Consumer electronics, Electric power system, Automotive electronics

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

Key Points: 
  • GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
  • GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of todays most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.