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Magnachip Boosts Its Extensive Automotive Product Lineup With the Release of a New 40V MXT MV MOSFET

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Mardi, avril 30, 2024

Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET1.

Key Points:

Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET1.
Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET2), 60V, and 250V MOSFETs for vehicles.
Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK).
“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip.

Renesas Introduces Industry’s First General-Purpose 32-bit RISC-V MCUs with Internally Developed CPU Core

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Mardi, mars 26, 2024

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the industry’s first general-purpose 32-bit RISC-V-based microcontrollers (MCUs) built with an internally developed CPU core.

Key Points:

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the industry’s first general-purpose 32-bit RISC-V-based microcontrollers (MCUs) built with an internally developed CPU core.
Similar to existing general-purpose MCUs, designers will have access to a full-scale development environment for the R9A02G021, provided by Renesas and its extensive network of toolchain partners.
The R9A02G021 group represents the first generation of general- purpose MCUs based on the internally developed RISC-V core by Renesas that will roll out over the next several years.
The R9A02G021 RISC-V MCUs are fully supported by Renesas’ e² studio Integrated Development Environment (IDE), offered to customers at no cost.

Vishay Intertechnology IGBT Power Modules in Redesigned INT-A-PAK Package Reduce Conduction and Switching Losses

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Mercredi, février 21, 2024

Thermal, Gen, TIG, Transport, Vishay Intertechnology, VS, VSH, VCE, IGBT, EMI, Robotics

MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.

Key Points:

Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages
MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package.
Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.

Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology

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Jeudi, janvier 11, 2024

The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters.

Key Points:

The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters.
Renesas now aims to further expand its WBG portfolio with Transphorm’s expertise in GaN, an emerging material that enables higher switching frequency, lower power losses, and smaller form factors.
Renesas will implement Transphorm’s auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications.
“Transphorm is a company uniquely led by a seasoned team rooted in GaN power and with origins from the University of California at Santa Barbara,” said Hidetoshi Shibata, CEO of Renesas.

Dr. Chow Bok-Hin, Executive Chairman of Niche-Tech Semiconductor Materials Limited, Honored with the Young Industrialist Awards of Hong Kong 2023

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Mercredi, novembre 22, 2023

Giant, Carbon, IGBT, Federation, Government, University, Research, LED, Ageing, IC, HKSAR, Guest

HONG KONG, Nov 22, 2023 - (ACN Newswire) - The Federation of Hong Kong Industries ("FHKI") hosted the 2023 Young Industrialist Awards of Hong Kong ("YIAH") and Industrialist of the Year ("IOY") Award presentation ceremony on November 17th.

Key Points:

HONG KONG, Nov 22, 2023 - (ACN Newswire) - The Federation of Hong Kong Industries ("FHKI") hosted the 2023 Young Industrialist Awards of Hong Kong ("YIAH") and Industrialist of the Year ("IOY") Award presentation ceremony on November 17th.
Dr. Chow Bok-Hin Felix, Executive Director and CEO of Niche-Tech Semiconductor Materials Limited (together with its subsidiary referred to as "Niche-Tech," stock code: 8490.HK), was honored with the Young Industrialist Awards of Hong Kong 2023.
The Young Industrialist Awards of Hong Kong were established by FHKI in 1988 to recognize young industrialists aged 21 to 45 who have achieved outstanding success in their respective industries.
The goal is to promote the process of industrial revitalization in Hong Kong, aiming to achieve sustainable development.

Navitas Showcases High-power Semiconductors for EV, Solar & Industrial at Next-gen Munich Conference

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Vendredi, décembre 1, 2023

WBG, IGBT, Hertz, Semiconductor, Exhibition, AI, Temperature, Business development, Silicon carbide, Gallium nitride, Growth, ZVS, EVP, EV, Senior

Navitas is a pure-play wide bandgap (WBG) semiconductor supplier, having shipped 100 million GaN and 12 million SiC power devices.

Key Points:

Navitas is a pure-play wide bandgap (WBG) semiconductor supplier, having shipped 100 million GaN and 12 million SiC power devices.
4.00 pm: Roundtable: Addressing challenges in the adoption of SiC and GaN WBG materials, with Dr. Ranbir Singh, EVP GeneSiC, Navitas.
9:00 am: “GaN Power IC Innovations for High-Frequency, High-Power Industrial Motor Drive”, by Alfred Hesener, Senior Director Industrial and Consumer Applications, Navitas.
Bodo's WBG Event is scheduled to take place from December 12th-13th at the Hilton Munich Airport Hotel, Terminalstraße Mitte 20, 85356 München-Flughafen, Germany.

Power Integrations Launches Gate Drivers for 62 mm SiC and IGBT Modules with Fast Short-Circuit Protection

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Mardi, décembre 12, 2023

Power Integrations (NASDAQ: POWI ), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.

Key Points:

Power Integrations (NASDAQ: POWI ), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents.
View the full release here: https://www.businesswire.com/news/home/20231212761894/en/
Power Integrations launches gate drivers for 62 mm SiC and IGBT modules with fast short-circuit protection, rated for 1200 V and 1700 V applications.
(Photo: Business Wire)
Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules.

Insulated-Gate Bipolar Transistors (IGBT) Global Strategic Market Report 2023 - ResearchAndMarkets.com

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Vendredi, décembre 1, 2023

Technology, Hardware, Semiconductor, Insulated-gate bipolar transistor, IGBT, Growth, Module, Renewable energy, Discrete, Pet industry

The "Insulated-Gate Bipolar Transistors (IGBT) - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering.

Key Points:

The "Insulated-Gate Bipolar Transistors (IGBT) - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering.
The global Insulated-Gate Bipolar Transistors (IGBT) market is characterized by strong competition among key players, with their market share percentages being closely monitored in 2022.
The market outlook is positive, thanks to the rising adoption of smart grids and electric vehicles, which are expected to fuel market growth.
The Insulated-Gate Bipolar Transistors (IGBT) market in the U.S. is estimated at US$1.5 Billion in the year 2022.

Power Electronics Market worth $61.0 billion by 2028 - Exclusive Report by MarketsandMarkets™

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Lundi, décembre 4, 2023

Silicon holds the largest market share in the production of a multitude of power electronics.

Key Points:

Silicon holds the largest market share in the production of a multitude of power electronics.
Within the power electronics industry , consumer electronics stands as a key sector, given that every electronic device necessitates a power supply (AC/DC) and effective power management for optimal energy utilization.
The integration of power electronics into consumer electronics serves to minimize power consumption, thereby reducing the overall carbon footprint and enhancing efficiency.
The Asia Pacific stands out as the swiftest expanding sector in the power electronics market, accelerated by substantial investments in infrastructure, consumer electronics, and smart grid initiatives.

Power Electronics Market worth $61.0 billion by 2028 - Exclusive Report by MarketsandMarkets™

Retrieved on:

Lundi, décembre 4, 2023

Silicon holds the largest market share in the production of a multitude of power electronics.

Key Points:

Silicon holds the largest market share in the production of a multitude of power electronics.
Within the power electronics industry , consumer electronics stands as a key sector, given that every electronic device necessitates a power supply (AC/DC) and effective power management for optimal energy utilization.
The integration of power electronics into consumer electronics serves to minimize power consumption, thereby reducing the overall carbon footprint and enhancing efficiency.
The Asia Pacific stands out as the swiftest expanding sector in the power electronics market, accelerated by substantial investments in infrastructure, consumer electronics, and smart grid initiatives.