SPIN MEMORY

Thomas Boone, Ph.D. Promoted to Vice President of Defense and Aerospace at Spin Memory

Retrieved on: 
Monday, December 14, 2020

Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced that Thomas Boone, Ph.D. has been promoted to vice president of Defense and Aerospace for Spin Memory.

Key Points: 
  • Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced that Thomas Boone, Ph.D. has been promoted to vice president of Defense and Aerospace for Spin Memory.
  • Toms promotion to vice president recognizes his personal efforts and dedication, as well as Spin Memorys continued commitment to these markets.
  • Spin Memorys leading IPs and MRAM innovations are bringing a new mainstream memory option to the market that is perfectly suited for modern defense and aerospace needs.
  • Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more.

Spin Memory Joins Semiconductor Industry Association as First MRAM-focused Member

Retrieved on: 
Thursday, December 10, 2020

Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced that it is joining the Semiconductor Industry Association (SIA).

Key Points: 
  • Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced that it is joining the Semiconductor Industry Association (SIA).
  • As an industry association, SIA is the voice of the semiconductor industry, and its membership represents 98% of the U.S. semiconductor industrys revenue.
  • Spin Memory is transforming the industry with a high-performance, embedded, non-volatile memory, providing a new mainstream memory option to replace legacy technologies.
  • Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more.

Spin Memory Unveils New Method of Designing Memory to Shake Up $100B Chip Market

Retrieved on: 
Wednesday, August 12, 2020

Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of existing and emerging memory technologies: the Universal Selector.

Key Points: 
  • Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of existing and emerging memory technologies: the Universal Selector.
  • Spin Memorys new Universal Selector creatively solves this problem with a novel approach to how transistors are designed and built into memory chips.
  • It is a completely new way of designing dynamic random-access memory (DRAM), magnetoresistive random-access memory (MRAM), Resistive RAM (ReRAM) and other emerging memory technologies which encompasses more than $100 billion in semiconductor products.
  • Spin Memory is currently working with NASA on the applicability of this technology to develop low SER and row hammer-immune DRAM solutions.

Spin Memory Announces Extension of Series B Funding

Retrieved on: 
Friday, July 17, 2020

Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced an extension of its Series B funding round, having received additional investment from all major investors.

Key Points: 
  • Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced an extension of its Series B funding round, having received additional investment from all major investors.
  • The additional investment validates the work were doing here at Spin Memory and demonstrates the value of our unique MRAM IP offerings especially during such challenging times, said Tom Sparkman, CEO of Spin Memory.
  • As the industry demand for high-speed, low-leakage, non-volatile memory continues to grow, Spin Memory is the pioneer in bringing MRAM closer and closer to SRAM-like performance as a new mainstream memory solution.
  • Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more.

Spin Memory to Discuss the Energy Catastrophe of Artificial Intelligence Applications at EMAI Workshop 2019

Retrieved on: 
Friday, August 23, 2019

Dr. Andrew Walker, VP of Product at Spin Memory, the pre-eminent supplier of MRAM IP and solutions globally, will present during the 2019 Emerging Memory and Artificial Intelligence Workshop .

Key Points: 
  • Dr. Andrew Walker, VP of Product at Spin Memory, the pre-eminent supplier of MRAM IP and solutions globally, will present during the 2019 Emerging Memory and Artificial Intelligence Workshop .
  • During the workshop, Dr. Walker will discuss how artificial intelligences (AI) requirement for constant data transfers to and from memory is leading to projections suggesting that AI datacenters could use more than 10% of the worlds energy generating capacity by 2025.
  • The rapid rise in demand for AI combined with the increasing energy needs of such applications has emphasized the importance of solid-state memory as a brake in system performance and power dissipation.
  • During his presentation, Dr. Walker will review the fundamentals of this energy conversion challenge and explain how developments in new memory technologies, such as MRAM, may be ideally suited to solve this impending AI energy catastrophe.