Silicon carbide

EQS-News: SUSS MicroTec starts fiscal year 2024 with strong growth and improved margins

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Freitag, Mai 10, 2024

Garching, May 8, 2024 – SÜSS MicroTec SE, a leading manufacturer of equipment and process solutions for the semiconductor industry, today publishes its quarterly statement for the first three months of the 2024 fiscal year.

Key Points: 
  • Garching, May 8, 2024 – SÜSS MicroTec SE, a leading manufacturer of equipment and process solutions for the semiconductor industry, today publishes its quarterly statement for the first three months of the 2024 fiscal year.
  • The preliminary financial figures for the first quarter of 2024 announced on April 18, 2024 are confirmed without exception.
  • In the first quarter of 2024, SUSS MicroTec generated an order intake of € 98.3 million (Q1 2023: € 94.9 million).
  • The Financial Report for the first three months of the 2024 fiscal year is available at www.suss.com/en/investor-relations in German and English.

Navitas Semiconductor Announces First Quarter 2024 Financial Results

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Donnerstag, Mai 9, 2024

TORRANCE, Calif., May 09, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the first quarter ended March 31, 2024.

Key Points: 
  • TORRANCE, Calif., May 09, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the first quarter ended March 31, 2024.
  • On a non-GAAP basis, loss from operations for the quarter was $11.8 million compared to a loss of $12.3 million for the first quarter of 2023.
  • Navitas Q1 2024 Financial Results Conference Call and Webcast Information:
    Toll Free Dial-in: (800) 715-9871 or (646) 307-1963, Conference ID: 4587273
    Our quarterly report on Form 10-Q for the period ended March 31, 2024 is due to be filed with the SEC on May 10, 2024.
  • Each of these non-GAAP financial measures are adjusted from GAAP results to exclude certain expenses which are outlined in the “Reconciliation of GAAP Results to Non-GAAP Financial Measures” tables below.

EY Announces Gene Sheridan of Navitas Semiconductor as an Entrepreneur Of The Year® 2024 Greater Los Angeles Award Finalist

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Mittwoch, Mai 8, 2024

LOS ANGELES, May 08, 2024 (GLOBE NEWSWIRE) -- Ernst & Young LLP (EY US) today announced that Gene Sheridan, CEO and co-founder of Navitas Semiconductor (Nasdaq:NVTS) was named an Entrepreneur Of The Year® 2024 Greater Los Angeles Award finalist.

Key Points: 
  • LOS ANGELES, May 08, 2024 (GLOBE NEWSWIRE) -- Ernst & Young LLP (EY US) today announced that Gene Sheridan, CEO and co-founder of Navitas Semiconductor (Nasdaq:NVTS) was named an Entrepreneur Of The Year® 2024 Greater Los Angeles Award finalist.
  • Now in its 38th year, ‘Entrepreneur Of The Year’ is the preeminent competitive business award for audacious leaders who disrupt markets, revolutionize sectors and have a transformational impact on lives.
  • Over the past four decades, the program has recognized daring entrepreneurs with big ideas and bold actions that reshape our world.
  • In Greater Los Angeles, sponsors also include Edelman, Cooley, Los Angeles Business Journal, Vaco, ADP, and Rutan & Tucker.

Power Integrations to Acquire the Assets of Odyssey Semiconductor

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Dienstag, Mai 7, 2024

Power Integrations (NASDAQ: POWI ), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced an agreement to acquire the assets of Odyssey Semiconductor Technologies (OTCQB: ODII), a developer of vertical gallium-nitride (GaN) transistor technology.

Key Points: 
  • Power Integrations (NASDAQ: POWI ), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced an agreement to acquire the assets of Odyssey Semiconductor Technologies (OTCQB: ODII), a developer of vertical gallium-nitride (GaN) transistor technology.
  • The transaction is expected to close in July 2024, after which all key Odyssey employees are expected to join Power Integrations’ technology organization.
  • Commented Dr. Radu Barsan, Power Integrations’ vice president of technology: “Power Integrations has been at the forefront of GaN development and commercialization since we began shipping products with PowiGaN technology in 2018.
  • The experience of the Odyssey team in high-current vertical GaN will augment and accelerate these efforts, and we are delighted to add them to our team.”
    Added Dr. Richard Brown, Odyssey co-founder and CEO: “The Odyssey team and I are excited to join Power Integrations in accelerating their GaN technology roadmap.

Wolfspeed Selects AIXTRON Tools to Support 200mm Production

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Freitag, Mai 3, 2024

Herzogenrath, April 18, 2024 – Today, AIXTRON (FSE: AIXA) announced Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, has placed multiple-tool orders in Q3 and Q4 2023 to utilize AIXTRON’s G10-SiC to help further ramp production for 200mm (8-inch) silicon carbide (SiC) epitaxial wafers.

Key Points: 
  • Herzogenrath, April 18, 2024 – Today, AIXTRON (FSE: AIXA) announced Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, has placed multiple-tool orders in Q3 and Q4 2023 to utilize AIXTRON’s G10-SiC to help further ramp production for 200mm (8-inch) silicon carbide (SiC) epitaxial wafers.
  • “We’re pleased with the AIXTRON team’s efforts to support the expansion of our 200mm silicon carbide epitaxy process.
  • The company’s G10-SiC has proven to be a suitable, reliable tool that will support our high-volume production needs currently on the Durham campus and ultimately at our new 200mm materials factory, The John Palmour Manufacturing Center for Silicon Carbide (The JP),” said Wolfspeed Chief Technology Officer, Elif Balkas.
  • First launched in September 2022, AIXTRON’s G10-SiC has quickly become the tool of record for both 150mm and 200mm silicon carbide epitaxy.

EQS-News: AIXTRON SE: Strong Q1 and growing success in SiC

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Freitag, Mai 3, 2024

Herzogenrath, Germany, April 25, 2024 – AIXTRON SE (FSE: AIXA, ISIN DE000A0WMPJ6) has succeeded in further expanding its strong competitive position in the first quarter of 2024.

Key Points: 
  • Herzogenrath, Germany, April 25, 2024 – AIXTRON SE (FSE: AIXA, ISIN DE000A0WMPJ6) has succeeded in further expanding its strong competitive position in the first quarter of 2024.
  • The work on the new Innovation Center at AIXTRON’s headquarters in Herzogenrath (Germany) is fully on schedule and within budget.
  • AIXTRON systems for SiC and GaN power applications accounted for the largest share of equipment revenues, totaling EUR 57.7 million in the quarter (Q1/2023: EUR 36.3 million).
  • With this, we are facilitating the transition towards a more sustainable and connected world,” said Dr. Christian Danninger, CFO of AIXTRON SE.

Vishay selects AIXTRON SiC multiwafer batch technology

Retrieved on: 
Freitag, Mai 3, 2024

Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components.

Key Points: 
  • Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components.
  • This, in combination with an excellent uniformity performance on 200mm wafers, has made us choose AIXTRON technology.
  • The AIXTRON team has developed a unique solution for the tightest control of doping levels and uniformity on 200 mm SiC wafers.
  • First introduced in September 2022, AIXTRON’s G10-SiC has quickly become the tool of record for both 150 mm and 200 mm SiC epitaxy.

EQS-News:  Between Theory and (Best) Practice: The Who's Who of Power Electronics Gets Together in Stockholm

Retrieved on: 
Freitag, Mai 3, 2024

Between Theory and (Best) Practice: The Who's Who of Power Electronics Gets Together in Stockholm

Key Points: 
  • Between Theory and (Best) Practice: The Who's Who of Power Electronics Gets Together in Stockholm
    The issuer is solely responsible for the content of this announcement.
  • Between Theory and (Best) Practice: The Who's Who of Power Electronics Gets Together in Stockholm
    Schramberg, 03.05.2024: When science and industry meet: From May 13-15, 2024, international experts from the semiconductor and PCB industries will meet in Stockholm, Sweden, for SCAPE 2024, a three-day conference on power electronics.
  • Under the motto ‘International Wide-Bandgap Power Electronics Applications Workshop’, the aim of the event is the interdisciplinary exchange of expertise, the latest developments and visions for the future.
  • The main topics of the conference will revolve around the latest technological developments in power electronics as well as the applications, possibilities and developments, e.g.

AIXTRON wins the prestigious German Innovation Award

Retrieved on: 
Freitag, Mai 3, 2024

Herzogenrath, April 19, 2024 – AIXTRON (FSE: AIXA) has won the German Innovation Award.

Key Points: 
  • Herzogenrath, April 19, 2024 – AIXTRON (FSE: AIXA) has won the German Innovation Award.
  • The prestigious award is organized by WirtschaftsWoche, Accenture, EnBW, and O₂ Telefónica under the patronage of the Federal Ministry for Economic Affairs and Climate Action.
  • "It is a great honor for me to accept this important award on behalf of AIXTRON and our entire team.
  • The German Innovation Award is not only a recognition of the innovations we have created but also a testimony of continuous work and the dedication of our team.

Navitas Highlights EV High-speed Hybrid Power Semiconductor Advances in China Innovation Summit Keynote

Retrieved on: 
Donnerstag, April 25, 2024

The summit gathers key players in power semiconductors and associated customer design teams for innovations in EV such as 800 V supercharging, battery management, intelligent connected vehicle electronics, and high-power digital power supplies.

Key Points: 
  • The summit gathers key players in power semiconductors and associated customer design teams for innovations in EV such as 800 V supercharging, battery management, intelligent connected vehicle electronics, and high-power digital power supplies.
  • Navitas’ GaNFast power ICs integrate GaN power and drive with control, sensing, and protection to enable faster charging, higher power density, greater energy savings and system cost reduction.
  • “Navitas’ leading GaN and SiC technology will enable faster charging, longer-range and more environmentally friendly power systems for EV.
  • These improvements not only significantly enhance product performance but also effectively shorten time-to-market.”
    The China Electronic Hotspot Solutions Innovation Summit will be held on April 27th, 2024, at Crowne Plaza, Nanshan District, Shenzhen.