Great Vowel Shift

Cambridge GaN Devices Addresses Challenges of Datacentres and More at APEC 2024

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tisdag, februari 13, 2024
Hardware, Chemicals, Plastics, Semiconductor, Data Management, Green Technology, Energy, Sustainability, Manufacturing, Technology, Professional Services, Environment, Artificial Intelligence, Other Manufacturing, Other Energy, Data Analytics, Engineering, Great Vowel Shift, MOSFET, APEC, Innovation system, CGD, Electronics, Exposition, Business development, Conference, Immunity, Gallium nitride, Artificial intelligence, Management

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition.
  • Giorgia Longobardi | Chief Executive Officer, CGD
    “With datacentres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures.
  • Thursday 29th February, 09.45-10.10 – ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, Director of Business Development & Technical Marketing, CGD.
  • CGD has delivered industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.”

CGD’s ICeGaN HEMTs Awarded “Best Demo” AT TSMC European Innovation Zone

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måndag, oktober 9, 2023
Technology, Hardware, Semiconductor, Gallium nitride, CGD, ICS, EUROPE, TSMC, Great Vowel Shift, Electronics, Socs, PCB, SOC, Silicon, Electric power

This concept is easily scalable to higher power and in voltages, which CGD is actively pursuing.

Key Points: 
  • This concept is easily scalable to higher power and in voltages, which CGD is actively pursuing.
  • ICeGaN is an Industry First: GaN eMode HEMTs can be driven like a Si MosFET.
  • Recognizing the differentiation that it brings to the market, ICeGaN was voted “Best Demo” by visitors to the Innovation Zone, TSMC’s showcase for start-up customers’ cutting-edge products at its largest annual event in Europe.
  • TSMC is excited to cooperate with CGD to deliver its easy-to-use 650V ICeGaN GaN transistors in high volume to companies working on diverse applications worldwide.

Cambridge GaN Devices Announces Latest in Tutorial Webinar Series: 'The GaN Advantage in Applications'

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torsdag, maj 18, 2023
Environment, Technology, Professional Services, Small Business, Alternative Energy, Green Technology, Energy, Hardware, Consumer Electronics, Q&A, Transaction Management eXecutive, Engineering, Electronics, Great Vowel Shift, Original equipment manufacturer, Back and Forth Series Two, Immunity, Temperature, ICS, Future, Cambridge, HEMT, Silicon carbide, CGD, Silicon, HV, Gallium nitride, MOSFET, Television, Electric power

At 5pm CET on Wednesday 24th May, Peter Comiskey, Director of Applications Engineering, Cambridge GaN devices, will present ‘The ICeGaN™ Advantage in Applications’.

Key Points: 
  • At 5pm CET on Wednesday 24th May, Peter Comiskey, Director of Applications Engineering, Cambridge GaN devices, will present ‘The ICeGaN™ Advantage in Applications’.
  • Peter Comiskey | Director of Applications Engineering, Cambridge GaN Devices
    “The use of GaN in power conversion offers the opportunity to significantly increase power density whilst reducing operating temperature and energy waste.
  • Following, in the second webinar, CGD’s CTO Florin Udrea discussed State-of-the-art architectures and future concepts in GaN technology for power electronics .
  • Peter leads the Cambridge GaN Devices Application Engineering team, helping customers & development partners globally successfully integrate their GaN devices into new designs.

Cambridge GaN Devices Announces Latest Webinar: Enhancing the Robustness, Reliability and Quality of GaN

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måndag, april 17, 2023
Green Technology, Semiconductor, Hardware, Environment, Technology, Q&A, Electronics, AC-DC, Great Vowel Shift, Electrical engineering, MIT, ICS, Future, HEMT, DC-DC, Silicon carbide, SM, CGD, Silicon, HV, Gallium arsenide, Gallium nitride, SB, MOSFET, Electric motor

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, today announced the third in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, today announced the third in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices.
  • At 5pm CET on Thursday 27th April, Zahid Ansari, VP Operations of Cambridge GaN Devices, will present ‘ICeGaN™: Enhancing the robustness, reliability and quality of GaN’.
  • Following, in the second webinar, CGD’s CTO Florin Udrea discussed State-of-the-art architectures and future concepts in GaN technology for power electronics .
  • The webinars will also be available to view or download from CGD’s website.

Cambridge GaN Devices Presents the Sustainable Future of Power Electronics Now, at APEC 2023

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fredag, mars 3, 2023
Semiconductor, Technology, Environment, Environmental Issues, Alternative Energy, Energy, Carbon, CGD, WBG, QRF, Electronics, APEC, Fraunhofer Institute for Systems and Innovation Research ISI, Engineering, Wide-bandgap semiconductor, Virginia Tech, Application, Gallium nitride, PFC, Partnership, EST, Conference, MOSFET, Great Vowel Shift, Innovation, Real, Information technology, Management, Patricia Neway

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will present several papers at the Applied Power Electronics Conference (APEC) covering strategic views on sustainability and deep-dive technology analysis.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will present several papers at the Applied Power Electronics Conference (APEC) covering strategic views on sustainability and deep-dive technology analysis.
  • GIORGIA LONGOBARDI | CHIEF EXECUTIVE OFFICER, CGD
    “The power electronics community and the wider world are now accepting that gallium nitride technology can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact.
  • Tuesday 21st March, 1.30PM-2.00PM - Exhibitor Seminar: ‘ICeGaN™ 650V Power GaN ICs bring efficiency, robustness and reliability for high power applications to the next level’, with Giorgia Longobardi, CEO, CGD.
  • On booth 305, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family.

Cambridge GaN Devices Announces Latest Webinar: State-of-the-art GaN Architectures and Future Concepts

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fredag, mars 3, 2023
Semiconductor, Consumer Electronics, Technology, Environment, Green Technology, Hardware, Silicon, CGD, WBG, Climate change, Electronics, Silicon carbide, Gallium nitride, Future, HEMT, Climate, MOSFET, Q&A, Great Vowel Shift, HV, Online shopping, Electric power

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, today announced the second in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, today announced the second in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices.
  • At 6pm CET on Tuesday 14th March, CGD’s Chief Technology Officer, Professor Florin Udrea will present on ‘State-of-the-art architectures and future concepts in GaN technology for power electronics’.
  • This is why CGD focuses on GaN, a Wide Bandgap (WBG) material which enables highest efficiency and high switching frequencies.
  • But we also understand the challenges designers, engineers, our customers are facing when working with GaN: specifically easy-of-use and reliability.

Cambridge GaN Devices Announces New Webinar Series: Powering up the Future With GaN

Retrieved on: 
fredag, februari 3, 2023
Semiconductor, Consumer Electronics, Technology, Environment, Green Technology, Hardware, CGD, HEMT, Q&A, Future, Silicon carbide, Electronics, Great Vowel Shift, MOSFET, HV, Gallium nitride, GMT, Silicon, Electric power

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity.
  • In the first instalment, ‘Powering up The Future with GaN’ , Andrea Bricconi, Chief Commercial Officer, CGD will introduce the basics of GaN, and position it in relation to traditional silicon solutions and silicon carbide (SiC), highlighting the potential benefits of broad adoption of GaN.
  • Andrea Bricconi | Chief Commercial Officer, CGD
    “The many advantages of GaN in power electronics – especially efficiency and power density – have been extensively reported on.
  • But people in all positions will rightly have questions about GaN and how they can best utilise it in their designs.