Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment.
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.
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Toshiba: TRSxxx65H series, 3rd generation 650V SiC Schottky barrier diodes. (Graphic: Business Wire)
The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.
Notes:
[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.
Applications
- Switching power supplies
- EV charging stations
- Photovoltaic inverters
Features
- Industry-leading[3] low forward voltage: VF＝1.2V (Typ.) (IF=IF(DC))
-
Low reverse current:
TRS6E65H IR＝1.1μA (Typ.) (VR=650V) -
Low total capacitive charge:
TRS6E65H QC＝17nC (Typ.) (VR=400V, f=1MHz)
Main Specifications
|
(Unless otherwise specified, Ta=25°C) |
|||||||||||
|
Part number |
Package |
Absolute maximum ratings |
Electrical characteristics |
Sample Check & Availability |
|||||||
|
Repetitive peak reverse voltage VRRM (V) |
Forward DC current IF(DC) (A) |
Non-repetitive peak forward surge current IFSM (A) |
Forward voltage (pulse measurement) VF (V) |
Reverse current (pulse measurement) IR (μA) |
Total capacitance Ct (pF) |
Total capacitive charge QC (nC) |
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|
|
Temperature conditions Tc (°C) |
f=50Hz (half-sine wave, t=10ms), Tc=25°C |
Square wave, t=10μs, Tc=25°C |
IF=IF(DC) |
VR=650V |
VR=400V, f=1MHz |
|||||
|
Typ. |
Typ. |
Typ. |
Typ. |
||||||||
|
TO-220-2L |
650 |
2 |
164 |
19 |
120 |
1.2 |
0.2 |
10 |
6.5 |
||
|
3 |
161 |
28 |
170 |
0.4 |
14 |
9 |
|||||
|
4 |
158 |
36 |
230 |
0.6 |
17 |
12 |
|||||
|
6 |
153 |
41 |
310 |
1.1 |
24 |
17 |
|||||
|
8 |
149 |
56 |
410 |
1.5 |
31 |
22 |
|||||
|
10 |
148 |
62 |
510 |
2.0 |
38 |
27 |
|||||
|
12 |
148 |
74 |
640 |
2.4 |
46 |
33 |
|||||
|
DFN8×8 |
4 |
155 |
28 |
230 |
0.6 |
17 |
12 |
||||
|
6 |
151 |
41 |
310 |
1.1 |
24 |
17 |
|||||
|
8 |
148 |
45 |
410 |
1.5 |
31 |
22 |
|||||
|
10 |
145 |
54 |
510 |
2.0 |
38 |
27 |
|||||
|
12 |
142 |
60 |
640 |
2.4 |
46 |
33 |
|||||
Follow the links below for more on the new product.
TRS2E65H
TRS3E65H
TRS4E65H
TRS6E65H
TRS8E65H
TRS10E65H
TRS12E65H
TRS4V65H
TRS6V65H
TRS8V65H
TRS10V65H
TRS12V65H
Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.
SiC Schottky Barrier Diodes
To check availability of the new products at online distributors, visit:
TRS2E65H
Buy Online
TRS3E65H
Buy Online
TRS4E65H
Buy Online
TRS6E65H
Buy Online
TRS8E65H
Buy Online
TRS10E65H
Buy Online
TRS12E65H
Buy Online
TRS4V65H
Buy Online
TRS6V65H
Buy Online
TRS8V65H
Buy Online
TRS10V65H
Buy Online
TRS12V65H
Buy Online
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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company's 21,500 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
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