VDD | Jotup

VirtualDime Launches on FutureBitX Exchange, Leading the Financial Technology

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금요일, 3월 15, 2024

VDD, MSB, Decentralized finance, CO, Cryptocurrency

FutureBitX Exchange, located at the forefront of this revolution, recently witnessed the official launch of VirtualDime (VDD), a decentralized finance (DeFi) project built on Web3 technology.

Key Points:

FutureBitX Exchange, located at the forefront of this revolution, recently witnessed the official launch of VirtualDime (VDD), a decentralized finance (DeFi) project built on Web3 technology.
VirtualDime, a decentralized finance (DeFi) project built on Web3 technology, has garnered attention for its innovative financial solutions and solid technical foundation.
The launch of VirtualDime on FutureBitX is not only a significant achievement of collaboration between the two companies but also a significant step forward for the entire financial technology sector.
With their collaboration, the market has reason to expect that FutureBitX and VirtualDime will jointly usher in a new wave in the global financial technology sector, bringing unprecedented financial service experiences for users.

Finwave Semiconductor Showcases Breakthrough Performance Advancement with GaN-on-Silicon Technology at MWC Barcelona 2024

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월요일, 2월 26, 2024

FR2, MIT, MIMO, VDD, High-pass filter, Emode, PAE, Fin field-effect transistor, Gallium nitride, Telecommunications, RF, Mobile World Congress

BARCELONA, Spain, Feb. 26, 2024 (GLOBE NEWSWIRE) -- Finwave Semiconductor, Inc. , an innovator of GaN (Gallium Nitride) technology, is showcasing its latest technology and products this week at MWC Barcelona .

Key Points:

BARCELONA, Spain, Feb. 26, 2024 (GLOBE NEWSWIRE) -- Finwave Semiconductor, Inc. , an innovator of GaN (Gallium Nitride) technology, is showcasing its latest technology and products this week at MWC Barcelona .
The company will unveil the newest performance benchmarks with its advanced GaN-on-Si technology and high-power switches targeting the infrastructure and handset markets.
Finwave will present its enhancement-mode (Emode) 200mm GaN-on-Si transistor technology.
Visit Finwave's meeting room at MWC Barcelona to witness the future of semiconductor technology firsthand.

Teledyne e2v HiRel Releases Catalog Radiation Tolerant S-Band (2 GHz to 5 GHz) Ultra-Low Noise Amplifier for Space Applications

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수요일, 3월 6, 2024

View the full release here: https://www.businesswire.com/news/home/20240306331700/en/

Key Points:

View the full release here: https://www.businesswire.com/news/home/20240306331700/en/
Teledyne e2v HiRel Rad Tolerant S-Band LNA, TDLNA2050SEP (Photo: Business Wire)
The TDLNA2050SEP LNA leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver exceptional performance in the S-band communication channel.
The TDLNA2050SEP amplifier delivers a gain of 17.5 dB from 2 GHz to 5 GHz while maintaining a noise figure of less than 0.4 dB and an output power (P1dB) of 19.5 dBm.
“Today, we’re releasing our latest LNA, optimized for space and radar applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

Teledyne e2v HiRel Releases Single-Supply, Radiation-Tolerant, UHF to S-Band (0.3 GHz to 3 GHz), Ultra-Low Noise Amplifier for Space Applications

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화요일, 1월 30, 2024

Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.

Key Points:

Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.
This new LNA is developed on a 90nm enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) process.
“Today we’re releasing our latest plastic space qualified LNA for harsh environment applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

Montage Technology Leads in Trial Production of 3rd-Gen DDR5 RCDs

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금요일, 10월 27, 2023

The RCD03 marks a major advancement in Montage's continued role as an innovator driving rapid DDR5 developments. This chip achieves a 14.3% speed increase over the 2nd-gen DDR5 RCD and a 33.3% increase over the 1st--gen, making it one of the fastest DDR5 memory interface solutions available today.

Key Points:

SHANGHAI, Oct. 27, 2023 /PRNewswire/ -- Montage Technology, a leading data processing and interconnect IC company, today announced it has taken the lead in trial production of the 3rd-generation DDR5 Registering Clock Driver (RCD03) designed for use in DDR5 RDIMMs.
With its blazingly fast 6400 MT/s data rate, the RCD03 sets a new bar for DDR5 memory performance in upcoming server platforms.
"We are proud to spearhead the production of DDR5 RCD03 and deliver cutting-edge RCD technology to the market.
Montage will continue to work closely with major CPU and DRAM manufacturers to propel DDR5 technology towards widespread application," said Stephen Tai, President at Montage Technology.

Teledyne e2v HiRel Releases Best-in-Class, Ultra-Low Noise Amplifier for Space Applications

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화요일, 9월 19, 2023

Teledyne e2v HiRel Electronics announces the availability of an industry leading, rad-tolerant, L- and S-band, low noise amplifier, model TDLNA002093SEP that is ideal for use in demanding high-reliability space and radar applications where low noise figure, minimal power consumption, and small package footprint are critical to mission success.

Key Points:

Teledyne e2v HiRel Electronics announces the availability of an industry leading, rad-tolerant, L- and S-band, low noise amplifier, model TDLNA002093SEP that is ideal for use in demanding high-reliability space and radar applications where low noise figure, minimal power consumption, and small package footprint are critical to mission success.
“Today we’re releasing our lowest noise figure LNA optimized for space and radar applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne e2v HiRel website.
Devices are available for ordering and shipment today, from Teledyne e2v HiRel or an authorized distributor , in commercial versions and with the option of Classes H and K-equivalent screening.

Cadence, GlobalFoundries, Hoerzentrum Oldenburg and Leibniz University Hannover Collaborate to Advance Hearing Aid Technology

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화요일, 7월 18, 2023

The SmartHeAP SoC prototype provides hearing aid companies with all the components required to create and reprogram hearing devices that improve a wearer’s hearing experience.

Key Points:

The SmartHeAP SoC prototype provides hearing aid companies with all the components required to create and reprogram hearing devices that improve a wearer’s hearing experience.
Cost Savings: The hearing aid software can be quickly upgraded without replacing the hardware, saving both the wearers and the hearing aid companies money.
“The collaboration between GF, Cadence, Hoerzentrum Oldenburg gGmbH and Leibniz University Hannover resulted in a successful hearing aid SoC that consumes significantly less power while providing hearing aid wearers with the first-of-its-kind binaural technology that transforms how they process a complete auditory scene.
By collaborating with Cadence, GF and Hoerzentrum Oldenburg gGmbH, we’re bringing the joy of hearing back to hearing aid wearers with this new SoC prototype.”

NOVOSENSE launched driver IC products applied in GaN applications

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월요일, 4월 24, 2023

Atmosphere, NEV, QFN, DC, LDO, Multimedia, Silicon carbide, VDD, Power Stage, MOSFET, VCE, UPS, Gallium nitride, BST, Electric motor, Electronics

NOVOSENSE single-channel intelligent isolation grid driver NSi68515 is specially designed to drive SiC MOSFETs and IGBTs with bus voltage of up to 2121V DC.

Key Points:

NOVOSENSE single-channel intelligent isolation grid driver NSi68515 is specially designed to drive SiC MOSFETs and IGBTs with bus voltage of up to 2121V DC.
Its input mode is compatible with optical coupler input, and the input terminal and output terminal adopt double capacitance enhanced isolation technology.
Based on the NOVOSENSE Adaptive OOK coding technology, it can support a minimum common-mode transient immunity (CMTI) of 150kV/μs.
GaN driver NSD2621 is a high-voltage half-bridge grid driver chip designed to drive E−mode (enhanced) GaN switching tubes.

Navitas Takes GaN Integration to Next Level with GaNSense™ Control

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월요일, 3월 20, 2023

Semiconductor, SR, EV, Smartphone, QFN, ICS, Sale, Silicon carbide, QR, CCM, VDD, DCM, Control, Navitas, Silicon, ESD, HV, Gallium nitride, Electric motor

Each of these power systems also require an optimized, high-speed, low-voltage (LV) silicon system controller which Navitas has developed and integrated with its high-performance GaN ICs to create the industry’s first GaNSense control IC technology.

Key Points:

Each of these power systems also require an optimized, high-speed, low-voltage (LV) silicon system controller which Navitas has developed and integrated with its high-performance GaN ICs to create the industry’s first GaNSense control IC technology.
The initial range of GaNSense Control features high-frequency quasi-resonant (HFQR) flybacks supporting QR, DCM, CCM and multiple-frequency, hybrid-mode operations, with frequencies up to 225 kHz.
“We’re starting with GaNSense Control for fast-chargers and consumer appliances, as well as auxiliary supplies in servers and data centers.
Through those, we are able to maximize the system benefits and Navitas’ value whether using GaN or SiC in next-generation power electronics.”

New STM32H5 MCU series from STMicroelectronics boosts performance and security for next-generation smart applications

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화요일, 3월 7, 2023

Cortex, United States patent law, SIL, Azure, Microsoft, VDD, Internet of things, SMPS, ST, NYSE, MCU, Temperature, Patent, PKI, PSA, STM32, SOC, Digital, City, STM, PC, OEM, IP, EEMBC, Third party, Electronics, Perception, Kudelski, LDO, Microcontroller, API, CMOS, AES, Intelligence, Attack, Arm, Video game, Computer data storage, EU

The new STM32H5 MCUs contain the embedded core from Arm®, the Cortex®-M33, which blends high performance with security, energy efficiency, and affordability, to best address the mid-range class of MCU-based applications.

Key Points:

The new STM32H5 MCUs contain the embedded core from Arm®, the Cortex®-M33, which blends high performance with security, energy efficiency, and affordability, to best address the mid-range class of MCU-based applications.
Building on this, ST adds a range of its own security features, including some developed with ST Authorized Partner, ProvenRun .
The STM32H5 is the first MCU series to come with system-on-chip (SoC) security services accessed via an industry-standard API.
ST has worked with highly regarded technology companies to achieve the significant improvements in performance and security now available with the STM32H5 series.