STT-MRAM

Everspin Reports Unaudited First Quarter 2024 Financial Results

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수요일, 5월 1, 2024
Semiconductor, Data Management, IOT (Internet of Things), Technology, Other Technology, Hardware, STT-MRAM, Toggle, Risk, Depreciation, Annual report, Security (finance), Traction, Tax, Patent, Bank statement, MRAM, GAAP, IBM

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, today announced preliminary unaudited financial results for the first quarter ended March 31, 2024.

Key Points: 
  • Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, today announced preliminary unaudited financial results for the first quarter ended March 31, 2024.
  • Licensing, royalty, patent, and other revenue of $3.6 million, compared to $1.1 million in the first quarter of 2023.
  • Everspin encourages investors to review its financial statements and publicly-filed reports in their entirety and not to rely on any single financial measure.
  • Everspin will host a conference call for analysts and investors on Wednesday, May 1, 2024, at 5:00 p.m. Eastern Time.

Next-Generation IBM FlashCore Modules Feature Everspin's PERSYST 1 Gigabit STT-MRAM, Enhancing Reliability

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화요일, 4월 30, 2024
Technology, Hardware, Semiconductor, Data Management, STT-MRAM, Speedcore, Magnetoresistive RAM, Multimedia, MRAM, DDR4, Power, IBM, Computer data storage

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that IBM has chosen the PERSYST EMD4E001G 1Gb STT-MRAM for use in their FlashCore Module 4.

Key Points: 
  • Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that IBM has chosen the PERSYST EMD4E001G 1Gb STT-MRAM for use in their FlashCore Module 4.
  • The EMD4E001G, a high-performance persistent memory, ensures critical data integrity even during power loss.
  • With a DDR4 interface, it delivers 2.7 gigabytes/second of both read and write bandwidth, coupled with instant non-volatility.
  • View the full release here: https://www.businesswire.com/news/home/20240430370312/en/
    Everspin's PERSYST 1Gb STT-MRAM (Photo: Business Wire)
    “IBM’s decision to use our PERSYST 1Gb MRAM in their newly announced FCM4 reflects the robustness and quality of Everspin’s innovative technology.

Everspin Technologies Unveils PERSYST, Simplifying Persistent Memory Solutions

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화요일, 4월 9, 2024
Professional Services, Data Management, Security, Technology, Data Analytics, Hardware, Automation, Stand, Embedded, AI, MRAM, Robotics, STT-MRAM

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, announced today the new brand name PERSYST for its persistent memory product family.

Key Points: 
  • Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, announced today the new brand name PERSYST for its persistent memory product family.
  • Everspin’s initiative to simplify product identification beyond conventional alphanumeric identifiers promises to make selecting the right solutions easier for clients.
  • “Known for unparalleled persistence, durability, and performance our PERSYST products are used for critical applications where data security is essential,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies.
  • Everspin also will collaborate with Synaptic Labs to showcase EMxxLX’s integration with the xSPI controller on an FPGA evaluation board.

Everspin Technologies Submits Application for U.S. CHIPS and Science Act Funding

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월요일, 3월 11, 2024
Technology, Hardware, Semiconductor, Data Management, CHIPS, Growth, CHIPS and Science Act, Science, Commerce, STT-MRAM, Optimism

Everspin Technologies Inc., (NASDAQ: MRAM), the market leader and singular domestic volume producer of MRAM, announced it has applied for the CHIPS Incentives Program, which is part of CHIPS for America, with a full application submitted to the National Institute of Standards and Technology, a bureau of the U.S. Department of Commerce.

Key Points: 
  • Everspin Technologies Inc., (NASDAQ: MRAM), the market leader and singular domestic volume producer of MRAM, announced it has applied for the CHIPS Incentives Program, which is part of CHIPS for America, with a full application submitted to the National Institute of Standards and Technology, a bureau of the U.S. Department of Commerce.
  • The submitted application is for additional 200mm MRAM capacity and will increase long term R&D IP capability.
  • “We are pleased to announce that we have recently submitted our proposal for the CHIPS and Science Act, reflecting our dedication to advancing MRAM technology.
  • “The potential funding from the CHIPS Act will be instrumental in further enhancing our capabilities, particularly in expanding our 200mm Toggle and STT-MRAM capacity.

Avalanche Technology Announces Two New Products in Its Upgradeable Small Form Factor Family of Gb STT-MRAM For Aerospace Applications

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월요일, 3월 25, 2024
Transfer, Temperature, SRAM, EEPROM, EAP, System, MRAM, Engineering, Life, RAM, Marketing, Low Earth orbit, STT-MRAM, GEO, Persistent, PDC, Parallel, FBGA, Video game

FREMONT, Calif., March 25, 2024 /PRNewswire-PRWeb/ -- Avalanche Technology, the leader in next generation MRAM technology, announced today two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest Spin Transfer Torque Magneto-resistive RAM (STT-MRAM) technology.

Key Points: 
  • With this development, Avalanche Technology is leading an evolution toward a new level of performance versus cost for modern space electronic systems.
  • "We welcome the addition of Avalanche's higher densities in the same physical footprint.
  • With the new 8Gb P-SRAM device, customers can design unified memory architecture systems for high reliability aerospace applications, all in one small form factor."
  • All density options in Avalanche's Parallel x32 Space Grade series will be available to customers participating in the early access program.

Everspin Reports Unaudited Fourth Quarter and Full Year 2023 Financial Results

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수요일, 2월 28, 2024
Technology, Hardware, Data Management, Radiation, Toggle, Total, STT-MRAM, Annual report, GAAP, COVID-19, Tax, Security (finance), Risk, Bank statement, Depreciation, Video game

Everspin Technologies, Inc. (NASDAQ: MRAM), the market leader in MRAM, today announced preliminary unaudited financial results for the fourth quarter and full year ended December 31, 2023.

Key Points: 
  • Everspin Technologies, Inc. (NASDAQ: MRAM), the market leader in MRAM, today announced preliminary unaudited financial results for the fourth quarter and full year ended December 31, 2023.
  • Licensing, royalties, patents, and other revenue of $4.3 million, compared to $1.1 million in the fourth quarter of 2022.
  • GAAP operating expenses of $8.1 million, compared to $7.5 million in the fourth quarter of 2022.
  • Everspin encourages investors to review its financial statements and publicly filed reports in their entirety and not to rely on any single financial measure.

Renesas Develops Embedded MRAM Macro that Achieves over 200MHz Fast Random-Read Access and a 10.4 MB/s Fast Write Throughput for High Performance MCUs

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수요일, 2월 21, 2024
Electronic Design Automation, Semiconductor, Data Management, Technology, Nanotechnology, Hardware, Bias, OTP, International, MB, Cascode, IO, STT-MRAM, ISSCC, AI, Multimedia, Megabit, Temperature, Renesas Electronics, Internet of things, VLSI, Conference, Memory, MCU, EFuse, Hertz, CPU, Computer data storage

It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).

Key Points: 
  • It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).
  • View the full release here: https://www.businesswire.com/news/home/20240221234586/en/
    Renesas test chip with breakthrough fast write and fast read technology.
  • As IoT and AI technologies continue to advance, MCUs used in endpoint devices are expected to deliver higher performance than ever.
  • To address these challenges, Renesas has developed the following new circuit technologies to achieve faster read and write operations in MRAM.

New High-Density Ceramic Column Grid Array STT-MRAM Optimally Designed for Space and the Harshest Environments

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금요일, 2월 23, 2024
Transfer, CTE, READ, Architecture, SRAM, STT-MRAM, CBGA, Research, Swap, Temperature, PWA, IBM, CLGA, QML, MRAM, Palladium, Avalanche, CGA, Family, CCGA, Parallel, CLASP, WRITE, Printed circuit board

The Micross co-fired Ceramic Column Grid Array package is the latest addition to our Hi-Reliability MRAM solutions for Space applications that will benefit from improved thermal stress related, electro-mechanical failures.

Key Points: 
  • The Micross co-fired Ceramic Column Grid Array package is the latest addition to our Hi-Reliability MRAM solutions for Space applications that will benefit from improved thermal stress related, electro-mechanical failures.
  • This new package offering is made possible via our Column Last Attach Solder Process (CLASP), licensed from IBM promoting a highly robust thermal shock & stress survivability option for our Hermetic fine pitch packages.
  • Perpendicular Spin-Torque MRAM devices offer inherent protection from harsh environments, and the best power profile of all non-volatile memories – making them optimally suited for hi-reliability aerospace and space applications.
  • Micross' licensed CLASP column attach process utilizes a Sn10Pb90 solder wire that is attached to the parent Land Grid package via a eutectic Palladium doped Sn63Pb37 solder attach process.

ITRI and TSMC Collaborate on Advancing High-Speed Computing with SOT-MRAM

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수요일, 1월 17, 2024
Artificial intelligence, Research, Symposium, VLSI Technology, STT-MRAM, Memory, AI, Laboratory, Industrial Technology Research Institute, International Electron Devices Meeting, Artificial intelligence of things, TSMC, HPC, Director general, Organization, ITRI, Circuit, Electronic, Computer data storage

This SOT-MRAM array chip showcases an innovative computing in memory architecture and boasts a power consumption of merely one percent of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.

Key Points: 
  • This SOT-MRAM array chip showcases an innovative computing in memory architecture and boasts a power consumption of merely one percent of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.
  • Dr. Shih-Chieh Chang, General Director of Electronic and Optoelectronic System Research Laboratories at ITRI, highlighted the collaborative achievements of both organizations.
  • And its overall computing performance can be further enhanced when integrated with computing in memory circuit design.
  • Looking ahead, this technology holds the potential for applications in high-performance computing (HPC), artificial intelligence (AI), automotive chips, and more."

Avalanche Technology Presents "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEDM Conference

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월요일, 12월 4, 2023
Transfer, Socs, STT, Deep Space Industries, Radiation, Physics, Avalanche, Torque wrench, STT-MRAM, Field-programmable gate array, Space industry, Pareto, MRAM, International Electron Devices Meeting, Software, Environment, UMC, CMOS, Swap, JEDEC, MEMS, Video game

FREMONT, Calif., Dec. 4, 2023 /PRNewswire-PRWeb/ -- Avalanche Technology continues to demonstrate industry leadership of both technology development and commercialization of the most advanced next-generation MRAM platform solutions for the Space Industry. Avalanche will present "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEEE International Electron Devices Meeting (IEDM), held in San Francisco, CA December 9th-13th. The presentation will provide attendees with a comprehensive overview of the technical specifications, design considerations, and real-world applications of Avalanche's most advanced Spin Transfer Torque (STT) MRAM devices for space applications. The company invites industry experts, researchers, and space technology enthusiasts to explore the potential of this groundbreaking innovation.

Key Points: 
  • Avalanche will present "Dual QSPI 8Gb STT-MRAM Solutions for Space Applications" at the 2023 IEEE International Electron Devices Meeting (IEDM), held in San Francisco, CA December 9th-13th.
  • The presentation will provide attendees with a comprehensive overview of the technical specifications, design considerations, and real-world applications of Avalanche's most advanced Spin Transfer Torque (STT) MRAM devices for space applications.
  • The company invites industry experts, researchers, and space technology enthusiasts to explore the potential of this groundbreaking innovation.
  • IEDM is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.