Valašská Senice

REVASUM (ASX: RVS) secures a Letter of Intent to purchase a 6EZ silicon carbide CMP system from SENIC, a leading silicon carbide substrate manufacturing technology company in Cheonan, South Korea

Retrieved on: 
Thursday, July 27, 2023
Valašská Senice, CMP, Silicon carbide, Silicon, Partnership, TTV, RA, SAN, MOSFET, Ceramic

The recent release of the 6EZ's 200mm conversion kit will enable the tool to support 150mm and 200mm SiC substrate manufacturing at the Senic facility in Cheonan, South Korea.

Key Points: 
  • The recent release of the 6EZ's 200mm conversion kit will enable the tool to support 150mm and 200mm SiC substrate manufacturing at the Senic facility in Cheonan, South Korea.
  • The 6EZ CMP system was developed with Revasum's 7AF-HMG SiC grinder to remove sub-surface damage from the grind process.
  • The 6EZ provides minimal total thickness variation (TTV) across the wafer and surface roughness (RA) to be on the order of 1.5 Angstroms.
  • With the 6EZ already having proved itself in silicon carbide substrate manufacturing, we believe the 6EZ system is the best option for Senic as we increase our production to meet the global industry demands."

REVASUM (ASX: RVS) secures a Letter of Intent to purchase a 6EZ silicon carbide CMP system from SENIC, a leading silicon carbide substrate manufacturing technology company in Cheonan, South Korea

Retrieved on: 
Thursday, July 27, 2023
Partnership, RA, Valašská Senice, TTV, ASX, LOI, CMP, Silicon carbide, SAN, Silicon, MOSFET, Ceramic

REVASUM (ASX:RVS) secures LOI to purchase a 6EZ CMP system from SENIC, a leading S. Korean SiC substrate mfg company

Key Points: 
  • REVASUM (ASX:RVS) secures LOI to purchase a 6EZ CMP system from SENIC, a leading S. Korean SiC substrate mfg company
    The recent release of the 6EZ's 200mm conversion kit will enable the tool to support 150mm and 200mm SiC substrate manufacturing at the Senic facility in Cheonan, South Korea.
  • The 6EZ CMP system was developed with Revasum's 7AF-HMG SiC grinder to remove sub-surface damage from the grind process.
  • The 6EZ provides minimal total thickness variation (TTV) across the wafer and surface roughness (RA) to be on the order of 1.5 Angstroms.
  • With the 6EZ already having proved itself in silicon carbide substrate manufacturing, we believe the 6EZ system is the best option for Senic as we increase our production to meet the global industry demands."

Silicon Carbide (SiC) Patent Landscape Report 2022: Market Revenues Exceeded $1Billion in 2021 - Market is Growing Fast, Driven by the Adoption of SiC Technology in Electric Vehicle (EV) Applications

Retrieved on: 
Wednesday, June 15, 2022
CAGR, Wolfspeed, Fuji Electric, Silicon carbide, Industry, Invention, STMicroelectronics, Patent, ST, Epitaxial graphene growth on silicon carbide, EV, SICC, Rohm, SKC, Denso, Toshiba, Technology, North American Toyota-Denso Oza, Publication, MOSFET, Leadership, Adoption, Kwansei Gakuin University, Extrinsic semiconductor, Sumitomo Electric Industries, Mitsubishi Electric, Hitachi, II-VI, Panasonic, IP, Toyota, Valašská Senice, Microsoft Excel, Soitec, Toyota Tsusho, Hospitality industry, Renewable energy, 3D printing, Cassette tape, Infineon Technologies

DUBLIN, June 15, 2022 /PRNewswire/ --The "Silicon Carbide (SiC) Patent Landscape 2022" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, June 15, 2022 /PRNewswire/ --The "Silicon Carbide (SiC) Patent Landscape 2022" report has been added to ResearchAndMarkets.com's offering.
  • The Silicon Carbide (SiC) power device market is growing fast, driven by the adoption of SiC technology in electric vehicle (EV) applications.
  • In this context, the publisher is releasing a new patent landscape report which aims to provide a comprehensive view of the power SiC patent landscape along the whole supply chain/value chain (bulk SiC & bare SiC wafers, epitaxial SiC substrates, SiC devices, SiC modules and circuits).
  • ), priority date, title, abstract, patent assignees, patent's current legal status, and segments (bulk SiC, epitaxial SiC substrates, SiC diodes, planar SiC MOSFETs, trench SiC MOSFETs, SiC modules, circuits, etc.).

Silicon Carbide (SiC) Patent Landscape 2022: Focus on the Top IP Players' Patent Portfolios - ResearchAndMarkets.com

Retrieved on: 
Tuesday, June 14, 2022
Chemicals, Plastics, Manufacturing, II-VI, SKC, EV, Leadership, Hitachi, Toyota, North American Toyota-Denso Oza, Wolfspeed, SICC, Silicon carbide, Microsoft Excel, IP, Patent, Invention, MOSFET, Toshiba, Epitaxial graphene growth on silicon carbide, Denso, Kwansei Gakuin University, Extrinsic semiconductor, STMicroelectronics, Toyota Tsusho, Publication, Technology, Panasonic, Adoption, Rohm, Industry, Fuji Electric, Sumitomo Electric Industries, ST, Soitec, Valašská Senice, Mitsubishi Electric, CAGR, Hospitality industry, Renewable energy, 3D printing, Cassette tape, Infineon Technologies

The "Silicon Carbide (SiC) Patent Landscape 2022" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Silicon Carbide (SiC) Patent Landscape 2022" report has been added to ResearchAndMarkets.com's offering.
  • The Silicon Carbide (SiC) power device market is growing fast, driven by the adoption of SiC technology in electric vehicle (EV) applications.
  • What's more, the technology coverage along the value chain and the geographical coverage of the patent portfolios are narrowly related to the business strategy of IP players.
  • Although historical IP players (Wolfspeed, SiCrystal, II-VI) keeps filing new patents, indicating a continuous improvement of their technology, Sumitomo Electric and Showa Denko took the IP leadership in the SiC substrate patent landscape.