Frank Genese

Navitas Spotlights GaNSafe™: World’s Most-Protected GaN Power Semiconductor, at Premier China Electronics Conference

Retrieved on: 
Friday, October 20, 2023

TORRANCE, Calif., Oct. 20, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced its continued sponsorship of the 2023 China Power Electronics and Energy Conversion Congress & the 26th China Power Supply Society (CPSS) Conference and Exhibition ( CPSSC 2023 ), revealing major next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductor platforms, including GaNSafe™ - the world’s safest GaN power semiconductor.

Key Points: 
  • TORRANCE, Calif., Oct. 20, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced its continued sponsorship of the 2023 China Power Electronics and Energy Conversion Congress & the 26th China Power Supply Society (CPSS) Conference and Exhibition ( CPSSC 2023 ), revealing major next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductor platforms, including GaNSafe™ - the world’s safest GaN power semiconductor.
  • Navitas is the technology and market leader in GaN, with over 100 million GaNFast™ power ICs shipped, and over 12 million GeneSiC™ power MOSFETs and diodes shipped into a $22 billion per year total market opportunity.
  • With GaNSafe, Navitas has optimized its 4th-generation GaN technology for demanding, high-power applications in data centers, solar / energy storage and EV markets, where efficiency, power density and robust & reliable operation are critical.
  • Visitors to the exhibition will discover ground-breaking technology demonstrations and complete power system platform designs at the Navitas booth.

Navitas’ SiC Experts Take Center Stage at ICSCRM 2023

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Thursday, September 14, 2023

TORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced participation at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, to be held in Sorrento, Italy.

Key Points: 
  • TORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced participation at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, to be held in Sorrento, Italy.
  • The ICSCRM conference fosters collaboration and knowledge sharing among the brightest minds in the field.
  • The session, titled "Devices 4: Short circuit, avalanche and reliability," will focus on crucial topics in the field of SiC technology.
  • “As a pioneer in the field, we continue to extend the boundaries of SiC technology, revolutionizing power semiconductors with cutting-edge GeneSiC™ technology.”

Navitas Semiconductor Announces Second Quarter 2023 Financial Results

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Monday, August 14, 2023

TORRANCE, Calif., Aug. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the second quarter ended June 30, 2023.

Key Points: 
  • TORRANCE, Calif., Aug. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the second quarter ended June 30, 2023.
  • Gross Margin: GAAP and non-GAAP gross margin for the second quarter of 2023 was 41.5% compared to 41.6% in the second quarter of 2022 and increased from 41.1% for the first quarter of 2023.
  • Income (Loss) from Operations: GAAP loss from operations for the second quarter was $27.2 million, compared to a loss of $20.0 million in the second quarter of 2022 and a loss of $35.5 million in the first quarter of 2023.
  • On a non-GAAP basis loss from operations for the quarter was $9.6 million compared with a loss of $8.9 million in the second quarter of 2022 and a loss of $12.3 million in the first quarter of 2023.

Navitas and Plexim Accelerate Time-to-Market with PLECS Models for Next-generation GeneSiC™ Power Semiconductors

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Thursday, June 29, 2023

TORRANCE, Calif. and ZURICH, Switzerland, June 29, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), and Plexim GmbH announce a partnership to release GeneSiC G3™ SiC MOSFET and Gen 5 MPS diode PLECS thermal loss models for highly-accurate simulations of complete power electronics systems.

Key Points: 
  • TORRANCE, Calif. and ZURICH, Switzerland, June 29, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), and Plexim GmbH announce a partnership to release GeneSiC G3™ SiC MOSFET and Gen 5 MPS diode PLECS thermal loss models for highly-accurate simulations of complete power electronics systems.
  • Power designers can simulate power and thermal losses in various soft- and hard-switching applications.
  • “Accurate, empirically-based simulation models maximize the chance of first-time-accurate designs, accelerating time-to-market and time-to-revenue,” noted Dr. Ranbir Singh, Navitas EVP for the GeneSiC business line.
  • “Unlike legacy modeling approaches that are not well-suited to new wide bandgap materials, PLECS uses a simplified, but accurate behavioral description to highlight the superior performance of the GeneSiC MOSFETs.”

Navitas Initiates Strategic Manufacturing Investments

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Tuesday, May 30, 2023

TORRANCE, Calif., May 30, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in next-generation power semiconductors, announced the first in a series of strategic manufacturing investments, to increase control, reduce costs and enhance revenue capacity for its GeneSiC silicon carbide (SiC) power semiconductors.

Key Points: 
  • TORRANCE, Calif., May 30, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in next-generation power semiconductors, announced the first in a series of strategic manufacturing investments, to increase control, reduce costs and enhance revenue capacity for its GeneSiC silicon carbide (SiC) power semiconductors.
  • Adding a SiC epitaxial (or “epi”) layer onto a raw SiC wafer is the first step in manufacturing individual SiC power devices.
  • This is especially significant as AIXTRON and Navitas are both firm believers and pioneers in the unstoppable advance of GaN and SiC over legacy silicon.
  • Navitas recently completed an $80 million follow-on common stock offering and plans to use proceeds from the offering for strategic manufacturing investments, among other possible uses, including working capital and general corporate purposes.

Navitas’ Next-gen SiC Power Semis Adopted in Industrial Chargers from Exide Technologies

Retrieved on: 
Thursday, May 18, 2023

TORRANCE, Calif., May 18, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), announced that Exide Technologies’ next-generation, high-frequency fast chargers for industrial material handling equipment have adopted new, leading-edge GeneSiC power semiconductors to ensure reliability, safety, ease-of-use and optimal charging.

Key Points: 
  • TORRANCE, Calif., May 18, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), announced that Exide Technologies’ next-generation, high-frequency fast chargers for industrial material handling equipment have adopted new, leading-edge GeneSiC power semiconductors to ensure reliability, safety, ease-of-use and optimal charging.
  • Exide Technologies is a leading provider of innovative and sustainable battery storage solutions for the industrial and automotive markets.
  • Exide’s high frequency chargers convert 220 V AC power to a battery-level voltage between 24 and 80 V for lead-acid and lithium-ion powered industrial vehicles.
  • “Exide Technologies delivers complete, carefully controlled fast-charging with close system monitoring for critical material-handling equipment, running 24/7,” said Dr. Dominik Margraf, Director Product Management Motion at Exide Technologies.

Navitas New 650 V MPS™ SiC Diodes Deliver Highest Efficiency and Superior Robustness for Data Center, Industrial, Solar and TV

Retrieved on: 
Monday, May 8, 2023

The 650 V-rated Merged-PiN Schottky (MPS™) diodes integrate a unique PiN-Schottky structure, delivering ‘low-built-in voltage-biasing’ (‘low knee’) for the highest efficiency across all load conditions with superior robustness.

Key Points: 
  • The 650 V-rated Merged-PiN Schottky (MPS™) diodes integrate a unique PiN-Schottky structure, delivering ‘low-built-in voltage-biasing’ (‘low knee’) for the highest efficiency across all load conditions with superior robustness.
  • Applications include PFC in server/telecom power supplies, industrial motor drives, solar inverters, LCD/LED TVs, and lighting.
  • “We’re delivering reliable, lead-edge performance for in-demand applications like AI and Chat GPT data center power,” noted Dr. Ranbir Singh, Navitas EVP for SiC.
  • To ensure reliable operation in critical applications, the gen-5, 650 V MPS diodes offer best-in-class robustness and ruggedness, with high surge-current and avalanche capability, with 100% avalanche (UIL) production testing.

Navitas Launches into High-Power Markets with GeneSiC SiCPAK™ Modules and Accelerates Bare-Die Sales

Retrieved on: 
Monday, May 8, 2023

Ranging from 650 V to 6,500 V, Navitas has the widest range of SiC technology.

Key Points: 
  • Ranging from 650 V to 6,500 V, Navitas has the widest range of SiC technology.
  • From an original line-up of discrete packages - from 8x8 mm surface-mount QFNs to through-hole TO-247s - the GeneSiC SiCPAK is an initial, direct entry point into higher-power applications.
  • The modules are built upon GeneSiC die that have already made a mark in terms of superior performance, reliability, and ruggedness.
  • Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooling and reliability.

Navitas New Distribution Deal with Richardson Electronics Expands Americas Footprint for Next-Gen SiC Semiconductors

Retrieved on: 
Wednesday, March 15, 2023

Richardson Electronics will focus on Navitas’ world-leading GeneSiC™ power MOSFETs and MPS™ diodes that are rated from 650 V – 6.5 kV.

Key Points: 
  • Richardson Electronics will focus on Navitas’ world-leading GeneSiC™ power MOSFETs and MPS™ diodes that are rated from 650 V – 6.5 kV.
  • Patented trench-assisted planar-gate technology delivers the lowest RDS(ON) at high temperature and the lowest energy losses at high speeds.
  • “Navitas’ GeneSiC SiC MOSFETs and MPS rectifiers have proven themselves as the new industry benchmark in performance, robustness, and reliability the world over.
  • “Their products are world class and provide disruptive technology to our customers looking for superb hard-switching components with excellent lead-times.”

Navitas Presents Pure-Play, Next-Gen Power Semiconductors (GaN & SiC) in Non-Deal Roadshows

Retrieved on: 
Tuesday, March 7, 2023

TORRANCE, Calif., March 07, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, has announced participation in the following non-deal roadshows.

Key Points: 
  • TORRANCE, Calif., March 07, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, has announced participation in the following non-deal roadshows.
  • China Renaissance : March 7th, 8pm US eastern / 8th 9am CN/HK.
  • CICC : March 7th, 9pm eastern (in Mandarin) / 8th 10am CN/HK.
  • “We continue to expand technology, markets and regions, and look forward to continued growth in 2023 as we accelerate the world’s transition away from fossil fuels and ‘Electrify Our World™’.”