Transphorm Announces Low-Cost Driver Solution for SuperGaN FETs
Transphorm, Inc. (Nasdaq: TGAN)—a global leader in GaN, the future of next generation power systems—released details on a high-performance, low-cost driver solution .
- Transphorm, Inc. (Nasdaq: TGAN)—a global leader in GaN, the future of next generation power systems—released details on a high-performance, low-cost driver solution .
- Unlike competing e-mode GaN solutions that require custom drivers or level shifting circuitry with gate protection devices, Transphorm’s SuperGaN® FETs are known for easy drivability given they pair with off-the-shelf drivers.
- The newly defined solution uses a high-speed, non-isolated, high-voltage half-bridge gate driver that further reduces total system cost without affecting the GaN FET’s or system’s performance.
- For more details about the above solution, download the AN0014 application note titled Low Cost, High Density, High Voltage Silicon Driver for Low- to Mid-Power GaN FET Applications here: https://bit.ly/3MTfQtB .