OKI Develops GaN Lifting off/Bonding Technology on QST Substrates of Shin-Etsu Chemical
This technology enables the vertical conduction of GaN and is expected to contribute to the realization and commercialization of vertical GaN power devices capable of controlling large currents.
- This technology enables the vertical conduction of GaN and is expected to contribute to the realization and commercialization of vertical GaN power devices capable of controlling large currents.
- On the other hand, OKI's CFB technology can lift off only the GaN functional layer from the QST substrate while maintaining high device characteristics.
- Through this, the combined technologies of Shin-Etsu Chemical and OKI solve the above two major challenges, paving the way for the social implementation of vertical GaN power devices.
- In the future, the two companies will contribute to the realization and widespread use of vertical GaN power devices through Shin-Etsu Chemical's provision of QST substrates or GaN grown QST substrates to companies manufacturing GaN devices and OKI's provision of CFB technology through partnering and licensing.