HEMT

Archer and EPFL Co-Develop a Single Chip Integrated Pulsed Electron Spin Resonance Microsystem

Retrieved on: 
Monday, March 25, 2024
Semiconductor, Hardware, Health, Technology, Health Technology, BiCMOS, CMOS, EPFL, HEMT, Research, ASX, IHP, Silicon–germanium, AXE, ESR, Electronics

Archer Materials Limited (“Archer”, the “Company”, “ ASX: AXE ”), a semiconductor company advancing the quantum technology and medical diagnostics industries, has built a single chip integrated pulsed electron spin resonance (“p-ESR”) microsystem, with its research partner École Polytechnique Fédérale de Lausanne (“EPFL”) in Switzerland.

Key Points: 
  • Archer Materials Limited (“Archer”, the “Company”, “ ASX: AXE ”), a semiconductor company advancing the quantum technology and medical diagnostics industries, has built a single chip integrated pulsed electron spin resonance (“p-ESR”) microsystem, with its research partner École Polytechnique Fédérale de Lausanne (“EPFL”) in Switzerland.
  • Archer and EPFL intend to use the p-ESR microsystem to perform complex measurements involving the potential electron spin manipulation of Archer’s 12CQ quantum materials.
  • The miniaturisation and electron spin sensitivity of the p-ESR microsystem also allows Archer to explore opportunities in developing quantum sensors, advanced spectrometers, and analytical devices.
  • Commenting on the development of the p-ESR chip, Dr Mohammad Choucair, CEO of Archer, said,
    “The engineering of a new pulsed ESR chip is a noteworthy achievement by the teams at Archer and EPFL.

Laser Processing Market worth $11.0 billion by 2029 - Exclusive Report by MarketsandMarkets™

Retrieved on: 
Thursday, March 7, 2024
Paper, Power Drive, Telecommunications, Coherent Corp., Research, Welding, Glass, Discrete, UV, Optoelectronics, Laser surgery, Integration, Metal, Solid, Lighting, Statistics, Semiconductor industry, HEMT, MMIC, Laser

The Solid lasers play a crucial role in laser processing due to their unique characteristics, reliability, and suitability for various applications.

Key Points: 
  • The Solid lasers play a crucial role in laser processing due to their unique characteristics, reliability, and suitability for various applications.
  • The importance of these lasers in laser processing is evident across different industries where precision, efficiency, and versatility are essential.
  • Laser processing is widely favored in the aerospace industry for its exceptional precision, material versatility, and ability to handle complex geometries.
  • The report profiles key players in laser processing companies such as Coherent Corp. (US), TRUMPF (Germany), Han's Laser Technology Industry Group Co., Ltd (China), IPG Photonics Corporation (US), Jenoptik AG (Germany), and others.

Laser Processing Market worth $11.0 billion by 2029 - Exclusive Report by MarketsandMarkets™

Retrieved on: 
Thursday, March 7, 2024
Paper, Power Drive, Telecommunications, Coherent Corp., Research, Welding, Glass, Discrete, UV, Optoelectronics, Laser surgery, Integration, Metal, Solid, Lighting, Statistics, Semiconductor industry, HEMT, MMIC, Laser

The Solid lasers play a crucial role in laser processing due to their unique characteristics, reliability, and suitability for various applications.

Key Points: 
  • The Solid lasers play a crucial role in laser processing due to their unique characteristics, reliability, and suitability for various applications.
  • The importance of these lasers in laser processing is evident across different industries where precision, efficiency, and versatility are essential.
  • Laser processing is widely favored in the aerospace industry for its exceptional precision, material versatility, and ability to handle complex geometries.
  • The report profiles key players in laser processing companies such as Coherent Corp. (US), TRUMPF (Germany), Han's Laser Technology Industry Group Co., Ltd (China), IPG Photonics Corporation (US), Jenoptik AG (Germany), and others.

Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions

Retrieved on: 
Friday, February 9, 2024
Telecommunications, Temperature, Gallium, HEMT, IQE, Gallium nitride

ITHACA, N.Y., Feb. 9, 2024 /PRNewswire/ -- Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface temperature rise of just 59 °C while dissipating 10.4 W/mm. Typical gallium nitride (GaN) HEMTs reach the standard operating temperature limit of 225 °C when dissipating approximately 5 W/mm. This dramatic improvement in thermal performance could substantially reduce thermal solution costs, enhance reliability, and increase peak power output in next-generation telecommunications (5G and beyond) and defense radar arrays.

Key Points: 
  • Typical gallium nitride (GaN) HEMTs reach the standard operating temperature limit of 225 °C when dissipating approximately 5 W/mm.
  • This dramatic improvement in thermal performance could substantially reduce thermal solution costs, enhance reliability, and increase peak power output in next-generation telecommunications (5G and beyond) and defense radar arrays.
  • Towards building out end-to-end commercial manufacturing, Soctera has started HEMT fabrication with a DoD-approved GaN foundry.
  • Soctera's technology maturation efforts were recently bolstered with $750,000 in non-dilutive funding awarded by the Defense Business Accelerator pitch competition.

BAE Systems, Inc. and U.S. Department of Commerce announce first CHIPS and Science Act funding to modernize microelectronics facility

Retrieved on: 
Monday, December 11, 2023
CHIPS, Gallium arsenide, Granite State, European Chips Act, CHIPS and Science Act, BAE Systems, Nashua, New Hampshire, GPS, Gallium nitride, City, BEA, Maryland Department of Commerce, Workforce, Investment, Science, Economy, Local government, Commerce, Alderman, Heart, NCC, Local, Semiconductor, HEMT, Partnership, Business, Nashua Community College, Legislation, MEC, Renewable energy

NASHUA, N.H., Dec. 11, 2023 /PRNewswire/ -- The U.S. Department of Commerce has announced approximately $35 million in initial funding for BAE Systems to modernize the Microelectronics Center (MEC) in Nashua, New Hampshire. This is the first funding announcement as part of the CHIPS and Science Act, which was designed to strengthen American manufacturing, supply chains, and national security. Modernizing BAE Systems' microelectronics center helps support this vision and the continued development and manufacturing of cutting-edge technology to serve customers' missions.

Key Points: 
  • This is the first funding announcement as part of the CHIPS and Science Act, which was designed to strengthen American manufacturing, supply chains, and national security.
  • BAE Systems' MEC is a 110,000-square-foot, Department of Defense (DoD)-accredited, semiconductor chip fabrication and foundry facility that produces technology for DoD applications.
  • "I'm thrilled to see these resources from the CHIPS and Science Act heading to BAE Systems in Nashua," said Congresswoman Annie Kuster.
  • "I'm thrilled BAE Systems has received this funding to modernize their microelectronics facility," said Congressman Chris Pappas.

Gallium Nitride (GaN) Semiconductor Devices Market to grow by USD 5.26 billion from 2022 to 2027 | Efficient Power Conversion Corp., Fujitsu Ltd., Infineon Technologies AG, and more among key companies - Technavio

Retrieved on: 
Friday, November 24, 2023
Light-emitting diode, Telephone, Fujitsu, Gallium nitride, OSRAM, Semiconductor industry, Infineon Technologies, USD, Nippon Telegraph and Telephone, Microchip Technology, Wolfspeed, HEMT, ICT, Geography, Growth, NXP Semiconductors, Mitsubishi Electric, Transphorm, Silicon, Qorvo, Mercury, Industrialisation, Texas Instruments, Semiconductor, Electronics

NEW YORK, Nov. 24, 2023 /PRNewswire/ -- The gallium nitride (GaN) semiconductor devices market is expected to grow by USD 5.26 billion from 2022 to 2027.

Key Points: 
  • NEW YORK, Nov. 24, 2023 /PRNewswire/ -- The gallium nitride (GaN) semiconductor devices market is expected to grow by USD 5.26 billion from 2022 to 2027.
  • The increase in demand for GaN semiconductor devices is notably driving the gallium nitride (GaN) semiconductor devices market.
  • Gallium Nitride (GaN) Semiconductor Devices Market 2023-2027: Company Analysis
    Fujitsu Ltd. - The company offers a high gallium nitride GaN called a high electron mobility transistor HEMT power amplifier.
  • The silicon carbide market for semiconductor application market size is estimated to grow by USD 3,336.31 million at a CAGR of 22.1% between 2022 and 2027.

CGD Forms GaN Eco-System With Chicony Power and Cambridge University Technical Services

Retrieved on: 
Monday, November 6, 2023
Other Energy, Other Manufacturing, Hardware, Energy, Data Management, Technology, Semiconductor, Manufacturing, ESD, OCP, History, University of Cambridge, Research, CRPS, SMPS, HEMT, Gallium nitride, TWSE, TCAD, Electronics, AI, CGD, Silicon, CUTS, Video game

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.
  • Chicony Power is a well-established total solution provider of power electronics systems focusing on power supplies and adapters for various applications, including notebooks, desktop computers, gaming devices, and server/cloud solutions.
  • The HVMS group at Cambridge University has a history of 25 years in power device design, TCAD simulations and characterisation of power devices.
  • The three parties will collaborate around a technical project entitled ‘Innovative low power and high power SMPS (switch mode power supplies) with advanced GaN solutions’.

Gallium Semiconductor Expands Portfolio With First ISM CW Amplifier

Retrieved on: 
Friday, September 15, 2023
Technology, Semiconductor, Other Technology, Telecommunications, Hertz, Multimedia, Marketing, HEMT, Plasma, RF, ISM, MPCVD, PCB, Gallium nitride, Electronics, S

Gallium Semiconductor, a respected supplier of GaN RF semiconductor solutions, today announced the availability of the GTH2e-2425300P ISM CW amplifier, a 2.4-2.5 GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT).

Key Points: 
  • Gallium Semiconductor, a respected supplier of GaN RF semiconductor solutions, today announced the availability of the GTH2e-2425300P ISM CW amplifier, a 2.4-2.5 GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT).
  • View the full release here: https://www.businesswire.com/news/home/20230915782208/en/
    Gallium Semi's ISM CW Amplifier GTH2e-2425300P (Photo: Business Wire)
    Roger Williams, CEO of 3D RF Energy Corp, stated, “The GTH2e-2425300P sets a new standard for performance and ease-of-use in 2.45 GHz ISM solid-state power design.
  • Angelo Andres, Director of Product Marketing for Multi-Markets at Gallium Semiconductor, noted, "The GTH2e-2425300P signifies an evolution in RF power amplification and underscores our dedication to optimize performance for ISM applications.
  • In addition to the GTH2e-2425300P, Gallium Semiconductor will showcase three new 250 W L- and S-Band radar products and a new DC to 12 GHz general-purpose broadband amplifier.

CGD Signs Global Distribution Deal With High Service Leader, DigiKey

Retrieved on: 
Tuesday, June 20, 2023
Other Energy, Environment, Energy, Engineering, Technology, Green Technology, Semiconductor, Manufacturing, CGD, HEMT, QG, Ecosystem, ESD, Silicon, Gallium nitride, Electronics, Digi-Key, Transformer

Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has announced the signing of a distribution deal with high-service leader, DigiKey.

Key Points: 
  • Cambridge GaN Devices (CGD) , the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has announced the signing of a distribution deal with high-service leader, DigiKey.
  • Under the terms of the global agreement, DigiKey will hold substantial stocks of CGD’s easy-to-use, rugged and highly-efficient ICeGaN™ HEMTs and related products.
  • DigiKey is very well respected and a trusted brand, and we are sure that this deal will enable CGD to penetrate and support new markets worldwide.”
    “We are pleased to add Cambridge GaN Devices (CGD) to our Fulfilled by DigiKey program.
  • By including CGD’s ICeGaN series transistors in our portfolio, DigiKey is delivering even more energy-efficient options for our customers to choose from.

Cambridge GaN Devices Announces Latest in Tutorial Webinar Series: 'The GaN Advantage in Applications'

Retrieved on: 
Thursday, May 18, 2023
Environment, Technology, Professional Services, Small Business, Alternative Energy, Green Technology, Energy, Hardware, Consumer Electronics, Q&A, Transaction Management eXecutive, Engineering, Electronics, Great Vowel Shift, Original equipment manufacturer, Back and Forth Series Two, Immunity, Temperature, ICS, Future, Cambridge, HEMT, Silicon carbide, CGD, Silicon, HV, Gallium nitride, MOSFET, Television, Electric power

At 5pm CET on Wednesday 24th May, Peter Comiskey, Director of Applications Engineering, Cambridge GaN devices, will present ‘The ICeGaN™ Advantage in Applications’.

Key Points: 
  • At 5pm CET on Wednesday 24th May, Peter Comiskey, Director of Applications Engineering, Cambridge GaN devices, will present ‘The ICeGaN™ Advantage in Applications’.
  • Peter Comiskey | Director of Applications Engineering, Cambridge GaN Devices
    “The use of GaN in power conversion offers the opportunity to significantly increase power density whilst reducing operating temperature and energy waste.
  • Following, in the second webinar, CGD’s CTO Florin Udrea discussed State-of-the-art architectures and future concepts in GaN technology for power electronics .
  • Peter leads the Cambridge GaN Devices Application Engineering team, helping customers & development partners globally successfully integrate their GaN devices into new designs.