Finwave Joins MITRE Engenuity’s Semiconductor Alliance to Accelerate Semiconductor Innovation in the U.S.
Retrieved on:
Wednesday, December 7, 2022
WALTHAM, Mass., Dec. 07, 2022 (GLOBE NEWSWIRE) -- 3DGaNTM (Gallium Nitride) innovators Finwave Semiconductor, Inc. today announced they have joined MITRE Engenuity’s Semiconductor Alliance.
Key Points:
- WALTHAM, Mass., Dec. 07, 2022 (GLOBE NEWSWIRE) -- 3DGaNTM (Gallium Nitride) innovators Finwave Semiconductor, Inc. today announced they have joined MITRE Engenuity’s Semiconductor Alliance.
- Having been spun out of MIT, Finwave brings a combination of groundbreaking university research, numerous technology patents and accomplished industry professionals with company-building experience to the Alliance.
- Working with the Semiconductor Alliance, Finwave seeks to change that by stimulating IC manufacturing in the U.S. Finwave champions the building of new fabs, as well as the expansion of existing fabs, to boost American semiconductor research, development and production.
- “Our plan calls for radical collaboration to secure semiconductor technology innovation, manufacturing leadership, and supply chain resilience,” said Raj Jammy, Ph.D., chief technologist, MITRE Engenuity, and executive director of the Semiconductor Alliance.