ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance.
- This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance.
- As these applications require the use of high-speed switching devices, in conjunction with the release of GaN devices, ROHM developed an ultra-high-speed gate driver IC that maximizes GaN performance.
- As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver.
- On the other hand, to demonstrate the performance of GaN devices, gate driver IC that enable high-speed switching while taking into account the low drive voltage of GaN HEMTs are essential.