Transistor count

Teledyne e2v HiRel Releases Catalog Radiation Tolerant S-Band (2 GHz to 5 GHz) Ultra-Low Noise Amplifier for Space Applications

Retrieved on: 
Wednesday, March 6, 2024
Other Science, Technology, Research, Other Defense, Contracts, Engineering, Aerospace, Manufacturing, Mobile, Wireless, Defense, Military, Semiconductor, Security, Satellite, Nanotechnology, Other Technology, Telecommunications, Networks, Hardware, Science, Electronic Design Automation, High-electron-mobility transistor, Multimedia, Radar, LNA, TID, Noise, Radio, Radiation, Business development, VDD, DFN, Transistor count, MMIC

View the full release here: https://www.businesswire.com/news/home/20240306331700/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20240306331700/en/
    Teledyne e2v HiRel Rad Tolerant S-Band LNA, TDLNA2050SEP (Photo: Business Wire)
    The TDLNA2050SEP LNA leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver exceptional performance in the S-band communication channel.
  • The TDLNA2050SEP amplifier delivers a gain of 17.5 dB from 2 GHz to 5 GHz while maintaining a noise figure of less than 0.4 dB and an output power (P1dB) of 19.5 dBm.
  • “Today, we’re releasing our latest LNA, optimized for space and radar applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
  • For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

Sanan IC premieres at MWC Barcelona to promote full turn-key RF front-end wafer foundry solution

Retrieved on: 
Wednesday, February 28, 2024
Intelligence, Mobile, Internet of things, Booth, MWC, WLP, SAW, Gallium arsenide, HP, TC, ODM, Cloud computing, Telecommunications, RF, Transistor count, Mobile phone

As the most influential worldwide telecommunications event, MWC Barcelona is regarded as the benchmark for the global mobile communications marketplace.

Key Points: 
  • As the most influential worldwide telecommunications event, MWC Barcelona is regarded as the benchmark for the global mobile communications marketplace.
  • Its main business is RF front-end IC wafer manufacturing, which includes GaAs (Gallium Arsenide) wafer foundry services, SAW filters, and advanced packaging for RF.
  • Sanan IC develops GaAs RF HBT and pHEMT technologies to support customers' designs in 4/5G frequency bands such as Sub-3G and Sub-6GHz.
  • Sanan IC will keep investing in technologies development, and improving the performance and reliability of services and products.

Sanan IC premieres at MWC Barcelona to promote full turn-key RF front-end wafer foundry solution

Retrieved on: 
Wednesday, February 28, 2024
Intelligence, Mobile, Internet of things, Booth, MWC, WLP, SAW, Gallium arsenide, HP, TC, ODM, Cloud computing, Telecommunications, RF, Transistor count, Mobile phone

As the most influential worldwide telecommunications event, MWC Barcelona is regarded as the benchmark for the global mobile communications marketplace.

Key Points: 
  • As the most influential worldwide telecommunications event, MWC Barcelona is regarded as the benchmark for the global mobile communications marketplace.
  • Its main business is RF front-end IC wafer manufacturing, which includes GaAs (Gallium Arsenide) wafer foundry services, SAW filters, and advanced packaging for RF.
  • Sanan IC develops GaAs RF HBT and pHEMT technologies to support customers' designs in 4/5G frequency bands such as Sub-3G and Sub-6GHz.
  • Sanan IC will keep investing in technologies development, and improving the performance and reliability of services and products.

Teledyne e2v HiRel Releases Single-Supply, Radiation-Tolerant, UHF to S-Band (0.3 GHz to 3 GHz), Ultra-Low Noise Amplifier for Space Applications

Retrieved on: 
Tuesday, January 30, 2024
Technology, Semiconductor, Engineering, Chemicals, Plastics, Aerospace, Nanotechnology, Manufacturing, Government Technology, Hardware, Defense, Multimedia, MMIC, Transistor count, Noise, DFN, Environment, UHF, VDD, Radio, Business development, LNA, Radiation, High-electron-mobility transistor, TID, Cable television

Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.

Key Points: 
  • Teledyne e2v HiRel announces the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success.
  • This new LNA is developed on a 90nm enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) process.
  • “Today we’re releasing our latest plastic space qualified LNA for harsh environment applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
  • For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne Defense Electronics website.

Teledyne e2v HiRel Releases Best-in-Class, Ultra-Low Noise Amplifier for Space Applications

Retrieved on: 
Tuesday, September 19, 2023
Hardware, Other Defense, Semiconductor, Security, Aerospace, Satellite, Manufacturing, Technology, Nanotechnology, Defense, Science, Telecommunications, Networks, Engineering, Research, Business development, Radiation, Noise, DFN, Chesapeake and Ohio class H-8, TID, Electronics, Multimedia, MMIC, Radar, DB, VDD, Indium gallium arsenide, LNA, Radio, Transistor count, Teledyne Technologies

Teledyne e2v HiRel Electronics announces the availability of an industry leading, rad-tolerant, L- and S-band, low noise amplifier, model TDLNA002093SEP that is ideal for use in demanding high-reliability space and radar applications where low noise figure, minimal power consumption, and small package footprint are critical to mission success.

Key Points: 
  • Teledyne e2v HiRel Electronics announces the availability of an industry leading, rad-tolerant, L- and S-band, low noise amplifier, model TDLNA002093SEP that is ideal for use in demanding high-reliability space and radar applications where low noise figure, minimal power consumption, and small package footprint are critical to mission success.
  • “Today we’re releasing our lowest noise figure LNA optimized for space and radar applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel.
  • For more information on all of Teledyne e2v HiRel’s space offerings, review our portfolio of semiconductors, converters, processors, and related services here on the Teledyne e2v HiRel website.
  • Devices are available for ordering and shipment today, from Teledyne e2v HiRel or an authorized distributor , in commercial versions and with the option of Classes H and K-equivalent screening.

Guerrilla RF Sampling New Set of High Gain Drivers for 5G mMIMO Applications

Retrieved on: 
Wednesday, June 21, 2023
5G, Telecommunications, Hardware, Engineering, Technology, Semiconductor, Manufacturing, Mobile, Wireless, Hertz, OIP3, 5V, Automotive industry, Gain compression, OTCQX, EXW, Transistor count, Warren G production discography, Electric motor

Guerrilla RF, Inc. (OTCQX: GUER) announces it is now sampling the GRF5123 and GRF5124 , two new high gain, high linearity driver amplifiers designed specifically for 5G mMIMO transmitters.

Key Points: 
  • Guerrilla RF, Inc. (OTCQX: GUER) announces it is now sampling the GRF5123 and GRF5124 , two new high gain, high linearity driver amplifiers designed specifically for 5G mMIMO transmitters.
  • With a rated operating range of 1.8-5 GHz, each device can cover all major mMIMO bands with separate tunes covering 1.8-2.2GHz, 2.3-2.7GHz, 3.3-4.2GHz, and 4.4-4.7GHz.
  • “The GRF5123/4 are specialized, high-gain variants of Guerrilla RF’s popular pHEMT driver cores which are already used in 4G and 5G base station applications,” says Jim Ahne, Guerrilla RF’s VP of Automotive and 5G Products.
  • “We tailored these specific devices to yield different gain levels for 64T64R or 32T32R 5G mMIMO platforms.

NEC develops high-speed, high-capacity power amplifier for next generation networks

Retrieved on: 
Thursday, January 19, 2023
Radio, Data-rate units, CMOS, Communication, Germanium, Silicon, Wireless Application Protocol, Gallium arsenide, Silicon-germanium, Conference, TSE, Transistor count, Research, Hertz, NEC, Communications satellite, Cable television

TOKYO, Jan 19, 2023 - (JCN Newswire) - NEC Corporation (NEC; TSE: 6701) has developed a power amplifier that will serve as a key device for mobile access and fronthaul/backhaul wireless communication equipment to enable high-speed, high-capacity communications for 5G Advanced and 6G networks.

Key Points: 
  • TOKYO, Jan 19, 2023 - (JCN Newswire) - NEC Corporation (NEC; TSE: 6701) has developed a power amplifier that will serve as a key device for mobile access and fronthaul/backhaul wireless communication equipment to enable high-speed, high-capacity communications for 5G Advanced and 6G networks.
  • This power amplifier uses GaAs technology that can be mass-produced and has achieved the world's highest output power(*) of 10 mW in the 150 GHz band.
  • The newly developed power amplifier uses a commercially available 0.1-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process.
  • In terms of circuit design, this power amplifier eliminates factors that degrade performance in the high-frequency band and uses an impedance matching network configuration suitable for high output power.

Semtech Collaborates with AWS to Empower Creation of Low-Power Internet of Things (IoT) Track and Trace Services with LoRa Cloud™ Geolocation

Retrieved on: 
Tuesday, November 29, 2022
Software, Mobile, Wireless, Networks, Internet, Data Management, Sustainability, Environmental Health, IOT (Internet of Things), Technology, Environment, Semiconductor, Other Technology, Cloud, Transistor count, Internal, SMTC, Engineering, Transport, LoRa, IOT, Communication, Security (finance), Agriculture, Corporation, Algorithm, Environment, GNSS, LPWA, Risk, ICT, COVID-19, Growth, Internet, LPWAN, Government, AWS, TSE, Multimedia, Ministry, Internal affairs, Ministry of Internal Affairs and Communications, Senior, FA, Investment, MikroTik, Satellite navigation device, Video game console, Risk management, Mobile phone, Online shopping, Tourism, Huawei, Semtech, Software, Mobile, Wireless, Networks, Internet, Data Management, Sustainability, Environmental Health, IOT (Internet of Things), Technology, Environment, Semiconductor, Other Technology

We are pleased to build on top of LoRa Cloud, as provided through AWS IoT Core Device Location, Shunichi Higashi, Senior Executive Officer at Ryoden Corporation.

Key Points: 
  • We are pleased to build on top of LoRa Cloud, as provided through AWS IoT Core Device Location, Shunichi Higashi, Senior Executive Officer at Ryoden Corporation.
  • We are excited about the opportunities created with the integration of LoRa Cloud geolocation services into the AWS IoT Core platform.
  • Today, our customers can combine the capabilities of LoRa Edge with an array of AWS services through a single console and billing experience.
  • Semtech, the Semtech logo and LoRa are registered trademarks or service marks, and LoRa Cloud and LoRa Edge are trademarks or service marks, of Semtech Corporation or its affiliates.

Akoustis Names Kamran Cheema Chief Product Officer

Retrieved on: 
Monday, July 11, 2022
IDM, Analysis, Risk, CPO, Knowledge, Financial condition report, GLOBE, Result, Device, SOI, Securities Exchange Act of 1934, Transistor count, MSEE, Â, Technology, Solution, BAW, CEO, Company, Failure, Forward-looking statement, SAW, Securities Act of 1933, Research, Cyberattack, MEMS, Energy Independence and Security Act of 2007, COVID-19, Industry, LTCC, University, TDK, Gallium arsenide, TriQuint Semiconductor, Acquisition, RF, Quality control, Site manager, VP, Board, Central Florida, Science, Annual report, NASDAQ, Mobile phone, Management, Risk management, Engineering, Qualcomm

Leverages 30 Years of Experience in Micro-Acoustic RF Filter Products, MEMs Technology and Device Engineering

Key Points: 
  • Leverages 30 Years of Experience in Micro-Acoustic RF Filter Products, MEMs Technology and Device Engineering
    Charlotte, N.C., July 11, 2022 (GLOBE NEWSWIRE) -- Akoustis Technologies, Inc. (NASDAQ : AKTS) (Akoustis or the Company), an integrated device manufacturer (IDM) of patented bulk acoustic wave (BAW) high-band RF filters for mobile and other wireless applications, announced today that Kamran Cheema has been appointed its new Chief Product Officer.
  • Mr. Cheema joined Akoustis in August 2021 as VP of Engineering, bringing a wealth of RF experience in product design, manufacturing, technology development, program management and quality management with over thirty years of experience in acoustic technology.
  • Jeff Shealy, founder and CEO of Akoustis, stated, Since joining Akoustis, Kamran has demonstrated exemplary leadership and significant expertise at every level throughout the Company.
  • Before joining Akoustis, Mr. Cheema was the Vice President of Engineering at Qualcomm RF360, where he was responsible for all aspects of micro-acoustic hardware solutions for the mobile phone market.

Teledyne e2v HiRel Releases Catalog Radiation Tolerant 30 GHz SPDT RF Switch for Space Applications

Retrieved on: 
Tuesday, June 21, 2022
Technology, Science, Oil, Gas, Alternative Energy, Engineering, Energy, Other Science, Research, Government Technology, Other Defense, Aerospace, Manufacturing, Defense, Internet, Mobile, Wireless, Hardware, Electronic Design Automation, SPDT, Solution, Review, Technology, Class, Radar, Commercial, Semiconductor, Indium gallium arsenide, Transistor count, MMIC, Business development, Ka, Electronics, Hertz, Radiation, Transport, Multimedia, TID, Cable television, Online shopping, Teledyne Technologies

Teledyne e2v HiRel announces the availability of a rad-tolerant 30 GHz, Single Pole Double Throw (SPDT) reflective RF switch, model TDSW030A2T, that is ideal for use in demanding high reliability, space and defense applications and is now available with qualified material off-the-shelf.

Key Points: 
  • Teledyne e2v HiRel announces the availability of a rad-tolerant 30 GHz, Single Pole Double Throw (SPDT) reflective RF switch, model TDSW030A2T, that is ideal for use in demanding high reliability, space and defense applications and is now available with qualified material off-the-shelf.
  • This new RF switch, developed on 0.15 m InGaAs pHEMT technology, will be available as die and is qualified per MIL-PRF-38534 Class K equivalency for space applications.
  • View the full release here: https://www.businesswire.com/news/home/20220621005069/en/
    Teledyne e2v HiRel 30 GHz Rad Hard SPDT RF Switch TDSW030A2T (Graphic: Business Wire)
    The TDSW030A2T leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver superior performance in the Ku and Ka microwave and millimeter-wave bands.
  • Joining our successful release of a 20 GHz switch last fall, this new product is the first 30 GHz switch qualified as TID radiation tolerant to 100 krad (Si) on the market.