Renesas Develops Embedded MRAM Macro that Achieves over 200MHz Fast Random-Read Access and a 10.4 MB/s Fast Write Throughput for High Performance MCUs
It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).
- It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).
- View the full release here: https://www.businesswire.com/news/home/20240221234586/en/
Renesas test chip with breakthrough fast write and fast read technology. - As IoT and AI technologies continue to advance, MCUs used in endpoint devices are expected to deliver higher performance than ever.
- To address these challenges, Renesas has developed the following new circuit technologies to achieve faster read and write operations in MRAM.