Germanene

WPI-MANA Achieves Direct Growth of Germanene, Marking Major Step for Electronic Device Fabrication

Retrieved on: 
Thursday, July 15, 2021
Chemistry, Physical sciences, Chemical elements, Monolayers, Germanene, Graphene, Potential applications of graphene, Boron nitride, Boron, Single-layer materials

They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.

Key Points: 
  • They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.
  • The WPI-MANA group grew the germanene at interfaces of graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) by segregating germanium atoms.
  • The resulting germanene was stable in air and uniform over the entire area covered with a van der Waals (vdW) material.
  • Such bandgap controllability would provide a way to overcome the problem of gapless graphene for future electronic device applications.

WPI-MANA Achieves Direct Growth of Germanene, Marking Major Step for Electronic Device Fabrication

Retrieved on: 
Thursday, July 15, 2021
Chemistry, Physical sciences, Chemical elements, Monolayers, Germanene, Graphene, Potential applications of graphene, Boron nitride, Boron, Single-layer materials

They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.

Key Points: 
  • They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.
  • The WPI-MANA group grew the germanene at interfaces of graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) by segregating germanium atoms.
  • The resulting germanene was stable in air and uniform over the entire area covered with a van der Waals (vdW) material.
  • Such bandgap controllability would provide a way to overcome the problem of gapless graphene for future electronic device applications.