Efficient Power Conversion

VPT, Inc. Commemorates 30th Anniversary

Retrieved on: 
Wednesday, October 25, 2023
NYSE, VPT, Multimedia, Efficient Power Conversion, HEICO, EMI, Growth, Gallium nitride, Marketing, EPC, HEI, Airline

BLACKSBURG, Va., Oct. 25, 2023 /PRNewswire/ -- VPT, Inc., a HEICO company (NYSE:HEI.A) (NYSE:HEI), celebrates its 30th Anniversary this year.

Key Points: 
  • BLACKSBURG, Va., Oct. 25, 2023 /PRNewswire/ -- VPT, Inc., a HEICO company (NYSE:HEI.A) (NYSE:HEI), celebrates its 30th Anniversary this year.
  • Dr. Sable commented, "We are proud of VPT's consistent growth over the past 30 years.
  • VPT was acquired by Heico Corporation in 2009 and operates as part of the HEICO Electronics Technology Group.
  • VPT products power critical systems on many of the world's most advanced satellite, commercial aerospace, and military programs.

VPT, Inc. Commemorates 30th Anniversary

Retrieved on: 
Wednesday, October 25, 2023
NYSE, VPT, Efficient Power Conversion, HEICO, EMI, Growth, Gallium nitride, Marketing, EPC, HEI, Airline

BLACKSBURG, Va., Oct. 25, 2023 /PRNewswire/ -- VPT, Inc., a HEICO company (NYSE:HEI.A) (NYSE:HEI), celebrates its 30th Anniversary this year.

Key Points: 
  • BLACKSBURG, Va., Oct. 25, 2023 /PRNewswire/ -- VPT, Inc., a HEICO company (NYSE:HEI.A) (NYSE:HEI), celebrates its 30th Anniversary this year.
  • Dr. Sable commented, "We are proud of VPT's consistent growth over the past 30 years.
  • VPT was acquired by Heico Corporation in 2009 and operates as part of the HEICO Electronics Technology Group.
  • VPT products power critical systems on many of the world's most advanced satellite, commercial aerospace, and military programs.

GaN Semiconductor Device Market worth $28.3 billion by 2028 - Exclusive Report by MarketsandMarkets™

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Monday, September 4, 2023
Odyssey, Integrated passive devices, Power semiconductor device, Lighting, ICT, Laser, Infineon Technologies, Semiconductor industry, Efficient Power Conversion, MM, Region, Space, NXP Semiconductors, Power module, Telecom infrastructure sharing, Defense, Electronics, Silicon carbide, Car, Growth, Integration, Communications satellite, Discrete, Energy, Transport, Silicon, Communication, Gallium nitride, SCSI Peripheral Device Type, STMicroelectronics, Illuminate Light & Laser Spectacular, Consumer electronics, RF, Semiconductor, Telecommunications, Ka band, Health care, Automotive industry, Industrial, Transphorm, Geography

Increasing demand for high-powered GaN based opto-semiconductor devices such as laser diodes, optocouplers, photodiodes, and opto-detectors contribute to the market growth of GaN semiconductor devices.

Key Points: 
  • Increasing demand for high-powered GaN based opto-semiconductor devices such as laser diodes, optocouplers, photodiodes, and opto-detectors contribute to the market growth of GaN semiconductor devices.
  • Therefore, as the growing market of consumer electronics is a major factor that fuels the market growth of GaN semiconductor devices, it further increases the adoption of GaN semiconductor devices in lighting & lasers applications.
  • Power Semiconductor segment is projected to register the highest CAGR in GaN semiconductor device market during the forecast period.
  • GaN based power semiconductor devices are a recent addition to the market and are currently manufactured by a few companies.

GaN Semiconductor Device Market worth $28.3 billion by 2028 - Exclusive Report by MarketsandMarkets™

Retrieved on: 
Monday, September 4, 2023
Odyssey, Integrated passive devices, Power semiconductor device, Lighting, ICT, Laser, Infineon Technologies, Semiconductor industry, Efficient Power Conversion, MM, Region, Space, NXP Semiconductors, Power module, Telecom infrastructure sharing, Defense, Electronics, Silicon carbide, Car, Growth, Integration, Communications satellite, Discrete, Energy, Transport, Silicon, Communication, Gallium nitride, SCSI Peripheral Device Type, STMicroelectronics, Illuminate Light & Laser Spectacular, Consumer electronics, RF, Semiconductor, Telecommunications, Ka band, Health care, Automotive industry, Industrial, Transphorm, Geography

Increasing demand for high-powered GaN based opto-semiconductor devices such as laser diodes, optocouplers, photodiodes, and opto-detectors contribute to the market growth of GaN semiconductor devices.

Key Points: 
  • Increasing demand for high-powered GaN based opto-semiconductor devices such as laser diodes, optocouplers, photodiodes, and opto-detectors contribute to the market growth of GaN semiconductor devices.
  • Therefore, as the growing market of consumer electronics is a major factor that fuels the market growth of GaN semiconductor devices, it further increases the adoption of GaN semiconductor devices in lighting & lasers applications.
  • Power Semiconductor segment is projected to register the highest CAGR in GaN semiconductor device market during the forecast period.
  • GaN based power semiconductor devices are a recent addition to the market and are currently manufactured by a few companies.

Insights on the GaN Power Device Global Market to 2027 - Extensive Utilization of GaN Power Devices in Various End Use Industries Drives Growth

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Tuesday, January 3, 2023
DAS, Gallium nitride, Internet, MRI, IOT, Toshiba, Texas Instruments, Magnetic resonance imaging, GHG, COVID-19, MACOM Technology Solutions, IQE, Efficient Power Conversion, MOSFET, Microchip Technology, EVS, Mitsubishi Electric, HEMT, Wolfspeed, Lighting, Qorvo, Traction, HEV, Electron, Radio, Silicon, Renewable energy, Animal, Electronic component, Potash, Growth

The global GaN power device market size reached US$ 187.1 Million in 2021.

Key Points: 
  • The global GaN power device market size reached US$ 187.1 Million in 2021.
  • The market is presently being driven by the extensive utilization of GaN power devices in various end use industries.
  • What has been the impact of COVID-19 on the global GaN power device market?
  • What is the structure of the global GaN power device market and who are the key players?

Global GaN Semiconductor Devices Market Report 2022: Stronger Di-Electric Fields and Reduced Switching Losses Fuels Adoption - ResearchAndMarkets.com

Retrieved on: 
Monday, December 19, 2022
Technology, Semiconductor, Gallium nitride, USD, Infineon Technologies, Communication, Consumer electronics, MEA, Porter's five forces analysis, Thermal conductivity, Growth, NXP, Telecom, Osram Opto Semiconductors GmbH, RF, Mobility, SWOT, Efficient Power Conversion, Government, Research and development, Power semiconductor device, Lisa M. Porter, Electronics, Investment, Research, Development, Semiconductor, Mobile phone

The Global GaN Semiconductor Devices Market was valued at USD 78.61 Million in the year 2021.

Key Points: 
  • The Global GaN Semiconductor Devices Market was valued at USD 78.61 Million in the year 2021.
  • GaN-embedded power semiconductor devices are gradually replacing their silicon-based counterparts due to a stronger di-electric field and significantly reduced switching losses.
  • Therefore, GaN Semiconductor Devices are being adopted more frequently in the automobile industry, which is fueling market expansion.
  • The report analyses the GaN Device Market by Type- (Opto Semiconductor, Power Semiconductor, RF Semiconductor).

Efficient Power Conversion (EPC) Releases Lowest On-Resistance Rad Hard Transistor Available on the Market for Demanding Space Applications

Retrieved on: 
Tuesday, March 15, 2022
Technology, Semiconductor, Engineering, Other Energy, Satellite, Aerospace, Manufacturing, Energy, Hardware, LET, Twitter, Thermal conductivity, Solution, Technology, Efficient Power Conversion, Immunity, DC-DC, Multimedia, Silicon, Motor vehicle, FET, Youku, FET amplifier, Egan, CEO, Instagram, Social media, View, MOSFET, IC, Engineering, EPC, Robotics, SEE, Gallium nitride, RDS, YouTube, Electronic component, Facebook

The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2).

Key Points: 
  • The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2).
  • View the full release here: https://www.businesswire.com/news/home/20220315005519/en/
    Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.
  • This is the lowest on-resistance for a rad hard transistor on the market today.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20220315005519/en/

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

Retrieved on: 
Tuesday, December 7, 2021
Semiconductor, Hardware, Manufacturing, Technology, Engineering, FET amplifier, Oil lamp, Efficient Power Conversion, Motor vehicle, FET, Egan, View, Efficiency, Gallium nitride, EPC, MOSFET, Multimedia, Silicon, Laser, Robotics, DC-DC, Time of flight, K, Transformer, Video game console, Electronic component

Efficient Power Conversion ( EPC ) announces the EPC2070 , a 100 V GaN transistor with a maximum RDS(on) of 23 m and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

Key Points: 
  • Efficient Power Conversion ( EPC ) announces the EPC2070 , a 100 V GaN transistor with a maximum RDS(on) of 23 m and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.
  • View the full release here: https://www.businesswire.com/news/home/20211207005369/en/
    EPC2070 - 100 V, 23 m, power transistor capable of 34 A pulsed in a tiny chip-scale package.
  • (Graphic: Business Wire)
    Applications demanding higher efficiency and power density no longer have to choose between size and performance.
  • The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon.

New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

Retrieved on: 
Tuesday, October 12, 2021
Education, Technology, Other Consumer, Publishing, Communications, Semiconductor, Other Technology, Training, Consumer, Other Education, Hardware, Twitter, Motor vehicle, Technology, Youku, QR, Robotics, Multimedia, ICS, Industry, Gallium nitride, Textbook, Adoption, Instagram, Egan, Efficient Power Conversion, YouTube, DC-DC, EPC, CEO, MOSFET, Computer, Artificial intelligence, AC, Student, View, Social media, Silicon, FET amplifier, Book

View the full release here: https://www.businesswire.com/news/home/20211012005264/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20211012005264/en/
    GaN Power Devices and Applications a new textbook from Efficient Power Conversion (Graphic: Business Wire)
    Since the 2019 release of the 3rd edition textbook, GaN Transistors for Efficient Power Conversion , published by J. Wiley, there has been rapid adoption of GaN transistors and integrated circuits into a wide range of end-use applications such as robots, drones, Artificial Intelligence (AI) computers, AC adapters, autonomous vehicles, and even vacuum cleaners.
  • This book, GaN Power Devices and Applications , provides an update on gallium nitride technology and applications by leading experts.
  • In a practical sense, this book includes detailed discussion and analysis of the latest examples of actual GaN usage in power supplies , lidar , motor drives , and low-cost satellite applications.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20211012005264/en/

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN®) Transistors and Integrated Circuits for Demanding Space Applications

Retrieved on: 
Tuesday, June 8, 2021
Satellite, Software, Hardware, Data management, Engineering, Technology, Aerospace, Manufacturing, Chemistry, Physical sciences, Technology, Semiconductor devices, Inorganic compounds, Efficient Power Conversion, Integrated circuits, Gallium nitride, Transistor, Radiation hardening, Gallium, Monolithic microwave integrated circuit

EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits.

Key Points: 
  • EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits.
  • With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
  • Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20210608005267/en/