Gaas

Strategy Analytics: Despite the Pandemic, GaAs Device Revenue Bounces Back in 2020

Retrieved on: 
Thursday, July 22, 2021
Technology, Hardware, Other Technology, Telecommunications, Chemistry, Physical sciences, Chemical compounds, Gallium arsenide, Optoelectronics, 5G, Gaas, RF Micro Devices

After 2019 saw the first decline in more than a decade, RF GaAs device revenue returned to growth in 2020.

Key Points: 
  • After 2019 saw the first decline in more than a decade, RF GaAs device revenue returned to growth in 2020.
  • The Strategy Analytics Advanced Semiconductor Applications (ASA) report RF GaAs Device Technology and Market Forecast: 2020 - 2025 identifies 5G devices and networks as the primary reason for this growth.
  • The report does go on to forecast that growth will resume, with RF GaAs device revenue approaching $9.5 billion by 2025.
  • Wider deployment of millimeter wave-capable 5G handsets and networks will be the main contributors to future RF GaAs device revenue growth.

StratEdge High-performance Semiconductor Packages to be on Display at IMS2021, June 8-9, in Booth 1014

Retrieved on: 
Monday, June 7, 2021
Semiconductor, Engineering, Consumer electronics, Technology, Manufacturing, Hardware, Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Solar cells, Gallium nitride, Nitrides, Gallium arsenide, Gallium, Flat no-leads package, Gaas, Light-emitting diode physics

StratEdge packages operate from DC to 63+ GHz and dissipate heat from compound semiconductor devices such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC).

Key Points: 
  • StratEdge packages operate from DC to 63+ GHz and dissipate heat from compound semiconductor devices such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC).
  • These packages enable compound semiconductor devices to meet the critical requirements of markets such as telecom, mixed signal, VSAT, broadband wireless, satellite, military, test and measurement, automotive, and down-hole.
  • Also join StratEdge for the Industry Talk series taking place on Monday, June 21, in the IMS virtual environment.
  • StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices.

Global Gallium Arsenide (GaAs) Wafers Industry to 2027 - Key Market Trends and Drivers - ResearchAndMarkets.com

Retrieved on: 
Wednesday, February 10, 2021
Technology, Chemicals, Plastics, Semiconductor, Manufacturing, Chemistry, Physical sciences, Natural sciences, Solar cells, Gallium arsenide, Optoelectronics, Gallium, Gaas, Wafer

The "Gallium Arsenide (GaAs) Wafers - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Gallium Arsenide (GaAs) Wafers - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The 112-page report presents concise insights into how the pandemic has impacted production and the buy side for 2020 and 2021.
  • Amid the COVID-19 crisis, the global market for Gallium Arsenide (GaAs) Wafers estimated at US$810.8 Million in the year 2020, is projected to reach a revised size of US$1.9 Billion by 2027, growing at a CAGR of 13% over the analysis period 2020-2027.
  • The U.S. Market is Estimated at $239.4 Million, While China is Forecast to Grow at 12.6% CAGR
    The Gallium Arsenide (GaAs) Wafers market in the U.S. is estimated at US$239.4 Million in the year 2020.

II-VI Incorporated Announces Availability of Full Product Line of High-Power Semiconductor Lasers on 6-inch GaAs Platform

Retrieved on: 
Thursday, October 22, 2020
Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Solar cells, Gallium arsenide, Optoelectronics, Gallium nitride, Laser diode, Gaas, Indium gallium phosphide, James R. Biard

PITTSBURGH, Oct. 22, 2020 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leader in gallium arsenide (GaAs) optoelectronics, today announced that its full product line of high-power semiconductor lasers is now available on its 6-inch GaAs platform.

Key Points: 
  • PITTSBURGH, Oct. 22, 2020 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leader in gallium arsenide (GaAs) optoelectronics, today announced that its full product line of high-power semiconductor lasers is now available on its 6-inch GaAs platform.
  • II-VI is now in volume production on its 6-inch GaAs platform for high-power edge-emitting diodes to meet the growing demand for fiber laser pump chips.
  • In addition to its 6-inch GaAs technology platform for optoelectronics, II-VI has established 6-inch GaAs and GaN-on-SiC (gallium nitride on silicon carbide) technology platforms for RF electronics.
  • II-VI has announced plans to establish a 6-inch SiC vertically integrated platform for power electronics and recently joined the U.S. Semiconductor Industry Association.

StratEdge to Display New Broadband QFNs and Revolutionary Eutectic Die Attach for GaN Devices at IMAPS Virtual 2020

Retrieved on: 
Monday, October 5, 2020
Telecommunications, Networks, Internet, Hardware, Consumer electronics, Technology, Semiconductor, Mobile, Wireless, Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Solar cells, Nitrides, Flat no-leads package, Gallium arsenide, Gallium nitride, Gallium, Gaas

StratEdge will showcase its newly introduced line of hermetic, Ka-band, QFN packages for 5G and satellite applications at IMAPS.

Key Points: 
  • StratEdge will showcase its newly introduced line of hermetic, Ka-band, QFN packages for 5G and satellite applications at IMAPS.
  • StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices.
  • We have developed a proprietary eutectic die attach method that produces extremely thin, low-void bond lines between the device and package heat sink."
  • StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices.