ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
SBDs with a trench MOS structure provide lower VF than planar types and enable higher efficiency in rectification applications.
- SBDs with a trench MOS structure provide lower VF than planar types and enable higher efficiency in rectification applications.
- One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies, resulting in higher power loss when used for switching.
- Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure.
- The trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration.