Egan

Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications

Retrieved on: 
Thursday, October 20, 2022
Semiconductor, Engineering, Technology, Manufacturing, Batteries, Hardware, QGD, RDS, Efficiency, MOSFET, USB, YouTube, QFN, Silicon, Asif Mohmmed, Twitter, Instagram, EPC, Multimedia, Flexible, Motor vehicle, Gallium nitride, CEO, Social media, DC-DC, Youku, BLDC, Egan, Robotics, View, FET amplifier, ICS, Electric motor, Printed circuit board, Electronic component, Facebook

View the full release here: https://www.businesswire.com/news/home/20221020005346/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20221020005346/en/
    Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications (Graphic: Business Wire)
    The EPC2308 GaN FET offers a super small RDS(on), of just 4.9 mOhm typical, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses.
  • The device features a thermally enhanced QFN package with footprint of just 3 mm x 5 mm, offering an extremely small solution size for the highest power density applications.
  • The EPC2308 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302 and the 100 V, 3.8 mOhm EPC2306 .
  • The EPC2308 combines the advantages of 150 V GaN with an easy to assemble and thermally enhanced QFN package, said Alex Lidow, CEO and co-founder of EPC.

GaN ICs Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones

Retrieved on: 
Wednesday, October 12, 2022
Semiconductor, Engineering, Technology, Manufacturing, Batteries, Hardware, Robotics, MOSFET, YouTube, ARMS, Silicon, Twitter, Instagram, EPC, Multimedia, EMI, Motor vehicle, Gallium nitride, CEO, Social media, Drone, DC-DC, Youku, BLDC, Egan, Torque, View, FET amplifier, ICS, Electric motor, Electronic component, Facebook

This voltage range and power level makes the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36 V 80 V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots and factory automation.

Key Points: 
  • This voltage range and power level makes the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36 V 80 V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots and factory automation.
  • View the full release here: https://www.businesswire.com/news/home/20221012005263/en/
    GaN ICs Shrink Motor Drives and Speeds Time-to-Market for eMobility, Power Tools, Robotics, and Drones.
  • Designers can use GaN ICs to make lighter weight and more efficient battery-operated motor drives for a wide variety of emobility and robotic applications, said Alex Lidow, CEO of EPC.
  • The cross-reference tool can be found at: https://epc-co.com/epc/DesignSupport/GaNPowerBench/CrossReferenceSearch....
    EPC is the leader in enhancement mode gallium nitride (eGaN) based power management.

EPC Opens New Motor Drive Center of Excellence

Retrieved on: 
Wednesday, September 14, 2022
Engineering, Semiconductor, Technology, Batteries, Manufacturing, Alternative Energy, Energy, DC-DC, YouTube, PEIC, Youku, Efficiency, Twitter, Integrated circuit, Motor vehicle, Social media, Time-invariant system, EPC, Technology, Instagram, Silicon, FET amplifier, Robotics, Egan, MOSFET, University, Research, Euro 7 (Dutch TV channel), Gallium nitride, Multimedia, View, Electric motor, Facebook

EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.

Key Points: 
  • EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.
  • View the full release here: https://www.businesswire.com/news/home/20220914005266/en/
    EPC opens Motor Drive Center of Excellence in Turin, Italy (Graphic: Business Wire)
    Strategically located, Turin has a historical tradition in electric motors and motor drives, enabling the company to draw on the wealth of local technical talent.
  • Moreover, the center is exploring ways to exploit the potential of EPCs GaN technology in motor drive applications to enable a substantial increase in the efficiency of the motor, leading to higher power density designs than what has been possible with historically MOSFET-based designs.
  • Commenting on the opening, he said, Our new facility combines a comprehensive GaN product portfolio and design expertise offering customers a center of excellence that is unrivalled for motor drive applications.

Expanded Family of Packaged GaN FETs Offers Footprint Compatible Solutions to Optimize Performance vs. Cost While Increasing Power Density and Improving Thermal Performance

Retrieved on: 
Thursday, September 8, 2022
Engineering, Semiconductor, Technology, Batteries, Manufacturing, Alternative Energy, Energy, MOSFET, CEO, PCB, EPC, Artificial intelligence, View, YouTube, Gallium nitride, Solution, Bio-FET, Robotics, BLDC, DC-DC, Multimedia, RDS, Motor vehicle, Youku, QGD, Instagram, Social media, Packaging and labeling, QFN, Silicon, Twitter, Egan, Efficiency, ICS, Electric motor, Video game console, Printed circuit board, Electronic component, Facebook

View the full release here: https://www.businesswire.com/news/home/20220908005207/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20220908005207/en/
    Expanded Family of Packaged GaN FETs Offers Footprint Compatible Solutions to Optimize Performance vs.
  • Cost (Graphic: Business Wire)
    The EPC2306 GaN FET offers a super small RDS(on), of just 3.8 mOhm, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses.
  • The EPC2306 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302 .
  • The two footprint compatible devices allow designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

BRC Solar Selects EPC 100 V eGaN® FETs for Next Generation Solar Optimizer

Retrieved on: 
Tuesday, August 23, 2022
Engineering, Semiconductor, Technology, Manufacturing, Alternative Energy, Energy, Machinery, MOSFET, VP, EPC, View, BRC, EMEA, YouTube, Gallium nitride, LGA, FET amplifier, Robotics, FET, Temperature, EMI, Egan, DC-DC, Multimedia, Motor vehicle, Youku, Instagram, Silicon, Twitter, Electronics, Social media, Electronic component, Facebook

BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems.

Key Points: 
  • BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems.
  • Designing-in Efficient Power Conversions EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact.
  • The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field.
  • Winona Kremb from BRC Solar Gmbh, commented, EPCs eGaN FETs open a new horizon in the development of high-density power electronics.

35 A GaN ePower™ Stage IC Boosts Power Density and Simplifies Design

Retrieved on: 
Wednesday, August 10, 2022
Electronic Design Automation, Semiconductor, Technology, Manufacturing, Nanotechnology, Other Manufacturing, Hardware, Multimedia, Motor vehicle, CEO, Silicon, Asif Mohmmed, FET amplifier, MOSFET, Youku, Robotics, YouTube, PCB, BLDC, Egan, EPC, DC-DC, Instagram, Twitter, View, QFN, Gallium nitride, Social media, Efficiency, Electric motor, Video game console, Printed circuit board, Facebook

View the full release here: https://www.businesswire.com/news/home/20220810005086/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20220810005086/en/
    EPC23102: 35 A GaN ePower Stage IC Boosts Power Density and Simplifies Design (Graphic: Business Wire)
    The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load current, while capable of switching speeds greater than 1 MHz.
  • The EPC23102 features a thermally enhanced QFN package with a footprint of just 3.5 mm x 5 mm, offering an extremely small solution size for the highest power density applications.
  • Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.
  • The EPC90147 development board is a 100 V maximum device voltage, 35 A maximum output current, half bridge featuring the EPC23102 ePower Stage IC.

Micross Announces Global Distribution Partnership with EPC Space… Expands Rad-Hard Gallium Nitride (GaN) Power Device Offering

Retrieved on: 
Tuesday, July 26, 2022
Multi-project wafer service, View, Egan, SR, CEO, Silicon, Gallium nitride, ICS, Solution, LIDAR, Multimedia, Orientation, Die, Robotics, Program, MOSFET, Renewable energy

Spanning a range of 40 V to 300 V, EPC Space offers a family of rad hard enhancement mode power transistors .

Key Points: 
  • Spanning a range of 40 V to 300 V, EPC Space offers a family of rad hard enhancement mode power transistors .
  • EPC Space technology produces GaN devices that are smaller, lighter and better performing, meaning the devices have many times superior switching performance compared to silicon solutions.
  • To complement the EPC Space discrete products, Micross will also distribute EPC Space's family of rad hard enhancement mode GaN drivers and power stages.
  • EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride (eGaN) power management solutions for space and other harsh environments.

EPC Space Announces Distribution Partnership with Micross for Rad-Hard Gallium Nitride (GaN) Power Devices for Space, Aerospace, and Other High Reliability Applications

Retrieved on: 
Tuesday, July 26, 2022
Satellite, Hardware, Robotics, Technology, Aerospace, Semiconductor, Manufacturing, Other Technology, Multi-project wafer service, Egan, Defense, AGC Aerospace & Defense, Electricity, Silicon, Gallium nitride, ICS, Solution, Multimedia, RAD, Assembly, Technology, Orientation, Die, EPC, Environmental testing, Robotics, Engineering, MOSFET, Aerospace, Renewable energy, Printed circuit board, Space

View the full release here: https://www.businesswire.com/news/home/20220726005407/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20220726005407/en/
    Micross to distribute EPC Space rad-hard GaN power devices to service the space, aerospace, and other high-reliability markets.
  • (Graphic: Business Wire)
    Spanning a range of 40 V to 300 V, EPC Space offers a family of rad hard enhancement mode power transistors .
  • To complement the EPC Space discrete products, Micross will also distribute EPC Spaces family of rad hard enhancement mode GaN drivers and power stages.
  • EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride (eGaN) power management solutions for space and other harsh environments.

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

Retrieved on: 
Tuesday, July 19, 2022
Robotics, Semiconductor, Satellite, Technology, Aerospace, Manufacturing, Hardware, View, Gallium nitride, CEO, Robotics, Thermal conductivity, DC-DC, Egan, Electric motor

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

Key Points: 
  • Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
  • 500 units pricing of $ $212.80/ea for engineering models and $315.84/ea for space level grade.
  • EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
  • eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20220719005495/en/

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

Retrieved on: 
Thursday, June 30, 2022
Other Manufacturing, Technology, Engineering, Satellite, Other Technology, Nanotechnology, Software, Manufacturing, Hardware, Electronic Design Automation, EPC, Silicon, View, FET, MOSFET, CEO, Egan, Motor vehicle, Engineering, LET, Robotics, Gallium nitride, IC, YouTube, Thermal conductivity, Radiation, DC-DC, Solution, Instagram, Market, Twitter, Immunity, FET amplifier, Youku, Multimedia, Social media, Efficiency, SEE, Electronic component, Electric motor, Facebook

The EPC7004 is a 100 V, 7 m, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint.

Key Points: 
  • The EPC7004 is a 100 V, 7 m, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint.
  • The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2).
  • Packaged versions will be available from EPC Space.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20220630005150/en/