Epitaxy

A Korean UV Sensor Manufacturer, Genicom Introduces Breakthrough Far UV & VUV Optical Sensor for Safe and Efficient Pathogen Control

Retrieved on: 
Wednesday, January 31, 2024

Ultraviolet (UV) has high energy in the wavelength range of 100 ~ 400nm and is used for sterilization, air purification, medical treatment, etc.

Key Points: 
  • Ultraviolet (UV) has high energy in the wavelength range of 100 ~ 400nm and is used for sterilization, air purification, medical treatment, etc.
  • As mentioned above, the need for a sensor that accurately detects only the particular wavelength range of the far UV & VUV is growing.
  • A Korean UV sensor manufacturer, Genicom UV Sensor Laboratory has developed a Far UV & VUV-dedicated optical sensor that can measure only the Far UV or VUV light by the AlN III-V compound semiconductor Epitaxial growth technology using high-temperature(>1300℃) Metal Organic Chemical Vapor Deposition(MOCVD).
  • Different from conventional Si-based sensors, the VUV sensor developed by Genicom, a Korean UV sensor manufacturer, use the nitride semiconductor with Ultra-wide band gap AlN epitaxy.

onsemi and VW Group Cement Strategic Collaboration on Silicon Carbide Technology for Next-Generation Electric Vehicles with Strategic Agreement

Retrieved on: 
Wednesday, January 25, 2023

The semiconductors are part of an overall system optimization and provide a solution that will support the front and rear traction inverters in the VW models.

Key Points: 
  • The semiconductors are part of an overall system optimization and provide a solution that will support the front and rear traction inverters in the VW models.
  • As part of the agreement, onsemi will deliver in a first step its EliteSiC 1200 V traction inverter power modules.
  • The EliteSiC power modules are pin to pin compatible to easily scale the solution to different power levels and types of motors.
  • “Our broad manufacturing footprint – including a resilient end-to-end SiC supply chain – empowers onsemi to deliver the supply assurance OEMs demand,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi.

North America Silicon EPI Wafer Market Report 2023: Sector to Reach $1.17 Billion by 2028 with an 8.5% CAGR

Retrieved on: 
Thursday, January 19, 2023

An epitaxial wafer, also known as an EPI wafer, is created by placing a layer of epitaxial silicon single crystal on a single crystal silicon wafer.

Key Points: 
  • An epitaxial wafer, also known as an EPI wafer, is created by placing a layer of epitaxial silicon single crystal on a single crystal silicon wafer.
  • This is likely to drive the North America silicon EPI wafer market at a notable CAGR during the forecast period.
  • The North America silicon EPI wafer market is segmented on the basis of wafer size, application, end user, type, and country.
  • Based on country, the North America silicon EPI wafer market is segmented into the US, Mexico, and Canada.

North America Silicon EPI Wafer Market Report 2023: Rising Demand for Epitaxial Wafers in Consumer Electronics Bolsters Growth - ResearchAndMarkets.com

Retrieved on: 
Thursday, January 12, 2023

An epitaxial wafer, also known as an EPI wafer, is created by placing a layer of epitaxial silicon single crystal on a single crystal silicon wafer.

Key Points: 
  • An epitaxial wafer, also known as an EPI wafer, is created by placing a layer of epitaxial silicon single crystal on a single crystal silicon wafer.
  • The North America silicon EPI wafer market is segmented on the basis of wafer size, application, end user, type, and country.
  • By end user, the North America silicon EPI wafer market is segmented into consumer electronics, automotive, healthcare, aerospace and defense, and others.
  • Based on country, the North America silicon EPI wafer market is segmented into the US, Mexico, and Canada.

TekMark Growth Partners Provides SBIR & TABA Support Services to 3D Epitaxial Technologies' Phase II Award with the DOE for Advanced Semiconductor Processing

Retrieved on: 
Wednesday, January 4, 2023

RICHARDSON, Texas, Jan. 4, 2023 /PRNewswire-PRWeb/ -- Richardson, TX USA – January 3, 2023 – TekMark Growth Partners, Ltd., a leading SBIR technology commercialization, technical and business assistance (TABA), marketing and strategic management consulting firm provided 3D Epitaxial with support and advisory services that helped them win a Phase II SBIR award from the Department of Energy (DOE): "Atomically Precise Manipulation of Silicon Properties: Material Modifications that Enhance Performance and Manufacture of Energy Conversion Devices".

Key Points: 
  • TekMark Growth Partners Ltd. provided SBIR & TABA related technology commercialization support involving market exploration, customer discovery, value proposition, financial statements among other advisory services that enhanced 3D Epitaxial's commercialization strategy and secured a Phase II SBIR award from the Department of Energy.
  • Dr. Wiley Kirk, 3D Epitaxial's President & CEO commented "the requirements for a successful Phase II proposal are very involved and I felt it necessary to use an experienced SBIR consulting and support services firm such as TekMark to guide us and enhance our chances for an award.
  • TekMark's successful track record in SBIR proposal development, TABA support services, uncovering supporting information and crafting an overall commercialization strategy combined with their knowledge of and experience in the semiconductor processing and electronics industries was critical in 3D Epitaxial being awarded a Phase II grant."
  • The DOE's Proposal Reviewer 1's comments included; "The company presents a very comprehensive market analysis with potential opportunities and market dynamics.

NCKU Researchers "Weave Single Crystal Thin Films" to Fabricate Twisted Epitaxial Lateral Homostructures

Retrieved on: 
Thursday, December 15, 2022

In their recent breakthrough published in Nature Communications on 10 May 2022,the team described how inserting a freestanding oxide layer assisted the generic approach for synthesizing epitaxial twisted oxide lateral homostructures.

Key Points: 
  • In their recent breakthrough published in Nature Communications on 10 May 2022,the team described how inserting a freestanding oxide layer assisted the generic approach for synthesizing epitaxial twisted oxide lateral homostructures.
  • Firstly, they chose SrTiO3 (STO) as the single crystal substrate and representative magnetite,La0.7Sr0.3MnO3 (LSMO), as the sacrificial layer.
  • This rotated FS-STO layer then acted as a modified template for the growth of twisted lateral BFO homostructures.
  • The team's new approach can achieve what conventional epitaxial growth methods cannot, i.e., provide additional controllability and tunability in thin film epitaxial growth.

Asia Pacific Silicon EPI Wafer Market Report 2022: Continuous Improvements in Silicon-on-Insulator Wafers to Reshape Sector - ResearchAndMarkets.com

Retrieved on: 
Friday, October 28, 2022

The "Asia Pacific Silicon EPI Wafer Market Forecast to 2028 - COVID-19 Impact and Regional Analysis - Wafer Size, Application, End User, and Type" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Asia Pacific Silicon EPI Wafer Market Forecast to 2028 - COVID-19 Impact and Regional Analysis - Wafer Size, Application, End User, and Type" report has been added to ResearchAndMarkets.com's offering.
  • Continuous advancements in AI-based GaN wafers are providing lucrative opportunities for the future growth of the silicon EPI wafer market.
  • The Asia-Pacific silicon EPI wafer market is segmented on the basis of wafer size, application, end user, type, and country.
  • Based on country, the Asia Pacific silicon EPI wafer market is segmented into Taiwan, China, India, Japan, South Korea, and Rest of Asia Pacific.

Global Thin Layer Deposition Equipment Market to Reach $82.1 Billion by 2026

Retrieved on: 
Monday, July 4, 2022

SAN FRANCISCO, July 4, 2022 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Thin Layer Deposition Equipment - Global Market Trajectory & Analytics" .

Key Points: 
  • SAN FRANCISCO, July 4, 2022 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Thin Layer Deposition Equipment - Global Market Trajectory & Analytics" .
  • Preview Registry
    Amid the COVID-19 crisis, the global market for Thin Layer Deposition Equipment estimated at US$40.3 Billion, is projected to reach a revised size of US$82.1 Billion by 2026, growing at a CAGR of 12.3% over the analysis period.
  • The U.S. Market is Estimated at $12.3 Billion in 2021, While China is Forecast to Reach $17.5 Billion by 2026
    The Thin Layer Deposition Equipment market in the U.S. is estimated at US$12.3 Billion in the year 2021.
  • Global Industry Analysts, Inc., ( www.strategyr.com ) is a renowned market research publisher the world`s only influencer driven market research company.

Key Foundry Releases 0.18-micron NON-EPI BCD Process for Low Power PMICs

Retrieved on: 
Thursday, June 9, 2022

SEOUL, South Korea, June 9, 2022 /PRNewswire/ --Key Foundry, the only pure-play foundry in Korea, announced today that it will release a 0.18-micron 30V NON-EPI (Epitaxy) BCD (Bipolar-CMOS-DMOS) process for low power PMICs.

Key Points: 
  • SEOUL, South Korea, June 9, 2022 /PRNewswire/ --Key Foundry, the only pure-play foundry in Korea, announced today that it will release a 0.18-micron 30V NON-EPI (Epitaxy) BCD (Bipolar-CMOS-DMOS) process for low power PMICs.
  • This new 0.18-micron 30V NON-EPI BCD process of Key Foundry shows the same level of performance compared to the existing EPI BCD process even without EPI layer.
  • As this new 0.18-micron 30V NON-EPI BCD process requires no EPI process, the process efficiency is improved, and it supports efficient designs by offering 5V LDMOS transistors for 5V power blocks.
  • Furthermore, as the logic device of this new 0.18-micron 30V NON-EPI BCD process retains comparable characteristics of the logic device of EPI BCD process, this new 0.18 micron 30V NON-EPI BCD process is compatible with digital libraries and IP of the existing process that are currently used for mass production.

II-VI Incorporated Introduces Heated Ion Implantation Foundry Services for 150 mm Silicon Carbide Wafers

Retrieved on: 
Monday, June 21, 2021

PITTSBURGH, June 21, 2021 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leading global provider of foundry ion implantation services and support to the microelectronics industry, today announced the introduction of heated ion implantation foundry services for 150mm silicon carbide (SiC) wafers.

Key Points: 
  • PITTSBURGH, June 21, 2021 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leading global provider of foundry ion implantation services and support to the microelectronics industry, today announced the introduction of heated ion implantation foundry services for 150mm silicon carbide (SiC) wafers.
  • II-VI now offers the worlds most advanced ion implantation foundry services and support for state-of-the-art 150 mm diameter SiC wafers.
  • To our knowledge, II-VI is the first foundry in the world to provide such advanced ion implantation services commercially for 150 mm SiC wafers and we plan to scale to 200 mm in the future, said Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies Business Unit.
  • II-VIs broad range of wafer foundry services includes silicon carbide, gallium arsenide, and indium phosphide epitaxial growth.