Infineon and Worksport collaborate to reduce weight and cost of portable power stations with GaN
Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density.
- Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density.
- Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs.
- In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.
- “With our GaN power semiconductors we enable Worksport to create the next generation portable power stations that users require.”
Infineon’s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.