Gwangju Institute of Science and Technology Researchers Reveal the Effect of AlN Surface Pits on GaN Remote Epitaxy
GWANGJU, South Korea, Sept. 13, 2023 /PRNewswire/ -- Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form freestanding membranes. However, harsh epitaxy conditions can often cause damage to the template materials, such as in the case of remote epitaxy of GaN thin films, promising materials for light-emitting diodes, photodetectors, and power electronic devices, on graphene/AlN templates.
- GaN remote heteroepitaxy has not been achieved by a standard metal–organic chemical vapor deposition (MOCVD) technique due to the high temperatures involved in the process.
- The researchers first performed an annealing test at 950 °C for 5 minutes to check the thermal stability of graphene on AlN.
- The exfoliation of the thus-grown GaN thin films was used as a proof of success of the remote epitaxy process.
- These results exemplify the importance of chemical and topographic properties of templates for successful remote epitaxy," highlights Prof. Lee.