Toppan Photomask Signs Agreement with IBM for Joint R&D on Semiconductor EUV Photomasks
TOKYO, Feb. 6, 2024 /PRNewswire/ -- Toppan Photomask, the world's premier semiconductor photomask provider, announced that it has entered into a joint research and development agreement with IBM related to the 2 nanometer (nm) logic semiconductor node, using extreme ultraviolet (EUV) lithography. This agreement also includes High-NA EUV photomask development capability on next-generation semiconductors.
- TOKYO, Feb. 6, 2024 /PRNewswire/ -- Toppan Photomask, the world's premier semiconductor photomask provider, announced that it has entered into a joint research and development agreement with IBM related to the 2 nanometer (nm) logic semiconductor node, using extreme ultraviolet (EUV) lithography.
- Based on this agreement, for a period of five years starting 1Q 2024, IBM and Toppan Photomask plan to develop photomask capability at the Albany NanoTech Complex (Albany, NY, USA) and Toppan Photomask's Asaka Plant (Niiza, Japan).
- The IBM and Toppan Photomask agreement brings these essential material and process control skills together to provide commercial solutions for 2nm node and beyond printing.
- From 2005 to 2015, IBM and Toppan Photomask (then Toppan Printing) jointly developed photomasks for advanced semiconductors.