STMicroelectronics and Soitec cooperate on SiC substrate manufacturing technology
The goal of this cooperation is the adoption by ST of Soitecs SmartSiC technology for its future 200mm substrate manufacturing, feeding its devices and modules manufacturing business, with volume production expected in the midterm.
- The goal of this cooperation is the adoption by ST of Soitecs SmartSiC technology for its future 200mm substrate manufacturing, feeding its devices and modules manufacturing business, with volume production expected in the midterm.
- The goal of the technology cooperation with Soitec is to continue to improve our manufacturing yields and quality.
- The combination of Soitecs SmartSiC substrates with STMicroelectronics industry-leading silicon carbide technology and expertise is a game-changer for automotive chip manufacturing that will set new standards.
- SmartSiC is a proprietary Soitec technology which uses Soitec proprietary SmartCut technology, to split a thin layer of a high quality SiC donor wafer,and bond it on top of a low resistivity handle polySiC wafer.