Power Integrations Launches Gate Drivers for 62 mm SiC and IGBT Modules with Fast Short-Circuit Protection
Power Integrations (NASDAQ: POWI ), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
- Power Integrations (NASDAQ: POWI ), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
- SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents.
- View the full release here: https://www.businesswire.com/news/home/20231212761894/en/
Power Integrations launches gate drivers for 62 mm SiC and IGBT modules with fast short-circuit protection, rated for 1200 V and 1700 V applications. - (Photo: Business Wire)
Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules.