Insulated-gate bipolar transistor

ACM Research Introduces Thin Wafer Cleaning System for High-volume Power Semiconductor Device Manufacturing

Retrieved on: 
Tuesday, September 15, 2020
Electronics industry, Transistors, Semiconductor devices, MOSFETs, Integrated circuits, Digital electronics, Semiconductor device, Field-effect transistor, Wafer, Insulated-gate bipolar transistor, Semiconductor device fabrication, Self-aligned gate

The system is intended for the manufacture of both MOSFET and insulated-gate bipolar transistor (IGBT) devices for the power semiconductor market, and features complete touch-free handling and processing based on the Bernoulli effect to eliminate possible wafer damage and improve final device yield.

Key Points: 
  • The system is intended for the manufacture of both MOSFET and insulated-gate bipolar transistor (IGBT) devices for the power semiconductor market, and features complete touch-free handling and processing based on the Bernoulli effect to eliminate possible wafer damage and improve final device yield.
  • ACMs Thin Wafer Cleaning System has been designed to meet manufacturers needs.
  • ACM delivered its first Thin Wafer Cleaning System to a China-based analog/power semiconductor manufacturer in the second quarter of 2020, with revenue recognition subject to qualification and acceptance.
  • ACM develops, manufactures and sells semiconductor process equipment for single wafer or batch wet cleaning, electroplating, stress-free polishing and thermal processes critical to advanced semiconductor device manufacturing, as well as wafer-level packaging.

Alpha and Omega Semiconductor Unveils New Generation of DrMOS Power Stage for High-Performance Graphics Add-in-Cards and Gaming Notebooks

Retrieved on: 
Tuesday, September 15, 2020
Semiconductor, Hardware, Electronic design automation, Consumer electronics, Technology, Electronics industry, Transistors, MOSFETs, Power electronics, Semiconductor devices, Power semiconductor device, Power MOSFET, Semiconductor industry, Insulated-gate bipolar transistor, Semiconductor

Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , Power IC , and Digital Power products.

Key Points: 
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , Power IC , and Digital Power products.
  • AOS has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in the power semiconductor industry, which enables us to introduce innovative products to address the increasingly complex power requirements of advanced electronics.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

Mitsubishi Electric to Launch Second-generation Full-SiC Power Modules for Industrial Use

Retrieved on: 
Tuesday, September 15, 2020
Semiconductor, Hardware, Manufacturing, Other Manufacturing, Technology, Electronics industry, Transistors, Semiconductor devices, Power electronics, Digital electronics, MOSFETs, Silicon carbide, Insulated-gate bipolar transistor, Field-effect transistor, Schottky diode, Power module, Semiconductor

Mitsubishi Electric Corporation (TOKYO:6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO:6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use.
  • The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields.
  • Built-in SiC-MOSFET and SiC-SBD help to reduce power loss by approximately 70% compared to that of Mitsubishi Electrics conventional Si-IGBT modules.
  • Power loss reduction and high carrier frequency operation will facilitate development of smaller and lighter external components, such as reactors and coolers.

Alpha and Omega Semiconductor to Participate in the Citi 2020 Global Technology Virtual Conference

Retrieved on: 
Tuesday, September 1, 2020
Electronic design automation, Semiconductor, Consumer electronics, Technology, Mobile, Wireless, Hardware, Electronics industry, Semiconductor devices, Transistors, Power electronics, MOSFETs, Power semiconductor device, Semiconductor, Insulated-gate bipolar transistor, ON Semiconductor

Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq: AOSL) today announced that management will participate in the Citi 2020 Global Technology Virtual Conference on Wednesday, September 9, 2020.

Key Points: 
  • Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq: AOSL) today announced that management will participate in the Citi 2020 Global Technology Virtual Conference on Wednesday, September 9, 2020.
  • Portfolio managers and analysts who wish to request a meeting should contact their institutional sales representative at Citi.
  • Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, HVIC, GaN/SiC, Power IC and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions.

Mitsubishi Electric to Launch LV100-type T-series IGBT Module for Industrial Use

Retrieved on: 
Tuesday, August 25, 2020
Semiconductor, Technology, Manufacturing, Alternative energy, Energy, Other Manufacturing, Hardware, Electronics industry, Semiconductor devices, Electrical components, Power electronics, MOSFETs, Insulated-gate bipolar transistor, Transistor, Bipolar

Mitsubishi Electric Corporation (TOKYO:6503) announced today the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO:6503) announced today the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses.
  • The LV100 package, which achieves high versatility and high current density, has been used widely in railway and electric power applications and now has been adapted for industrial uses.
  • - The LV100 package, used widely in railway and electric power applications, has been adapted and optimized to help standardize packages for industrial applications.
  • Industry-leading3 current density of 17.14A/cm2 is realized in this high-power IGBT module by optimizing the package structure.

Insights on the IGBT and Thyristor Global Market to 2027 - by IGBT Packaging Type, IGBT Power Rating, IGBT Application & Thyristor Application - ResearchAndMarkets.com

Retrieved on: 
Friday, August 21, 2020
Semiconductor, Technology, Utilities, Manufacturing, Energy, Other Manufacturing, Electronics industry, Power electronics, Semiconductor devices, Electrical components, MOSFETs, Insulated-gate bipolar transistor, High-voltage direct current, Thyristor

The "IGBT and Thyristor Market Forecast to 2027 - COVID-19 Impact and Global Analysis by IGBT Packaging Type; IGBT Power Rating; IGBT Application; Thyristor Application" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "IGBT and Thyristor Market Forecast to 2027 - COVID-19 Impact and Global Analysis by IGBT Packaging Type; IGBT Power Rating; IGBT Application; Thyristor Application" report has been added to ResearchAndMarkets.com's offering.
  • The global IGBT and Thyristor market is experiencing remarkable growth attributed to the replacement of aging power infrastructure, particularly in developed economies, as well as the deployment of smart grids.
  • IGBT and Thyristor are gaining acceptance due to advantages such as high external thermal performance along with efficiency.
  • Countries in the region are aiming to adopt HVDC systems owing to their low power loss during long-distance power transmission.

Alpha and Omega Semiconductor Announces a New High SOA MOSFET for 12V Hot Swap Applications

Retrieved on: 
Thursday, August 20, 2020
Electronic design automation, Semiconductor, Consumer electronics, Technology, Mobile, Wireless, Hardware, Electronics industry, Transistors, Power electronics, MOSFETs, Semiconductor devices, Power semiconductor device, Power MOSFET, Insulated-gate bipolar transistor, Forward-looking statement, Field-effect transistor

Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC /GaN, Power IC and Digital Power products.

Key Points: 
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC /GaN, Power IC and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions.
  • These forward-looking statements include, without limitation, references to the efficiency and capability of new products, and the potential to expand into new markets.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

Global Insulated-Gate Bipolar Transistors Industry (2020 to 2027) - Market Trajectory & Analytics

Retrieved on: 
Wednesday, August 19, 2020
Electronics industry, Semiconductor devices, Electrical components, MOSFETs, Power electronics, Insulated-gate bipolar transistor, Bipolar, Transistor

DUBLIN, Aug. 19, 2020 /PRNewswire/ -- The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, Aug. 19, 2020 /PRNewswire/ -- The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The publisher brings years of research experience to the 9th edition of this report.
  • The 396-page report presents concise insights into how the pandemic has impacted production and the buy side for 2020 and 2021.
  • The U.S. Market is Estimated at $1.4 Billion, While China is Forecast to Grow at 12.6% CAGR
    The Insulated-Gate Bipolar Transistors (IGBT) market in the U.S. is estimated at US$1.4 Billion in the year 2020.

Insights on the Insulated-Gate Bipolar Transistors Global Market to 2027 - 57 Companies Profiled Including ABB Group, Danfoss & Fuji Electric - ResearchAndMarkets.com

Retrieved on: 
Wednesday, August 19, 2020
Technology, Hardware, Semiconductor, Electronics industry, Electrical components, Power electronics, MOSFETs, Semiconductor devices, Insulated-gate bipolar transistor, Bipolar, Transistor

The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The publisher brings years of research experience to the 9th edition of this report.
  • The 396-page report presents concise insights into how the pandemic has impacted production and the buy side for 2020 and 2021.
  • The U.S. Market is Estimated at $1.4 Billion, While China is Forecast to Grow at 12.6% CAGR
    The Insulated-Gate Bipolar Transistors (IGBT) market in the U.S. is estimated at US$1.4 Billion in the year 2020.

Automotive IGBT Industry Report, 2020 - Leading Players are Infineon, Mitsubishi Electric, Fuji Electric, ON Semi, and Semikron

Retrieved on: 
Thursday, August 6, 2020
Electronics industry, Transistors, Semiconductor devices, Power electronics, MOSFETs, Semikron, Insulated-gate bipolar transistor, ON Semiconductor, Infineon Technologies

DUBLIN, Aug. 6, 2020 /PRNewswire/ -- The "Automotive IGBT Industry Report, 2020" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, Aug. 6, 2020 /PRNewswire/ -- The "Automotive IGBT Industry Report, 2020" report has been added to ResearchAndMarkets.com's offering.
  • IGBT is critical to electrical and electronic system and deemed as the 'CPU' of the electrical and electronic industry.
  • IGBT devices make up about 10% of NEV cost and share roughly 20% of charging pile costs.
  • The global IGBT modules market is ruled by giants like Infineon, Mitsubishi Electric, Fuji Electric, ON Semi, and Semikron.