Insulated-gate bipolar transistor

ACM Research Launches Furnace Tool for Power Device Industry to Address IGBT Process Challenges

Retrieved on: 
Thursday, December 17, 2020

Todays IGBT applications, particularly EVs, require faster switching capabilities, increased power efficiency, and higher power density.

Key Points: 
  • Todays IGBT applications, particularly EVs, require faster switching capabilities, increased power efficiency, and higher power density.
  • Todays IGBT devices must be smaller, faster and thinner than ever, said David Wang, CEO of ACM Research.
  • ACM delivered its first tool customized for alloy anneal processing early this December to a power device manufacturer in China.
  • Contact ACM to learn how the Ultra Fn Furnace tool can be customized to your specifications.

Mitsubishi Electric to Launch HV100 Dual Type X-Series HVIGBT Modules

Retrieved on: 
Thursday, December 17, 2020

Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of two new HV100 dual type X-Series HVIGBT modules for higher power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of two new HV100 dual type X-Series HVIGBT modules for higher power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems.
  • The modules achieve industry-leading* dual type 600A current ratings with 10kVrms isolation voltage, believed to be unmatched among silicon HVIGBT modules rated at 3.3kV.
  • * According to Mitsubishi Electric research as of December 17, 2020.
  • Seventh-generation IGBTs incorporating CSTBT and RFC diodes achieve 8.57A/cm2 power density, unsurpassed by other Si-modules (3.3kV/600A version)
    View source version on businesswire.com: https://www.businesswire.com/news/home/20201216005369/en/

Alpha and Omega Semiconductor Announces New High SOA MOSFETs for 48V Hot Swap Telecom Applications

Retrieved on: 
Tuesday, December 15, 2020

Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC /GaN, Power IC , and Digital Power products.

Key Points: 
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , SiC /GaN, Power IC , and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions.
  • These forward-looking statements include, without limitation, references to the efficiency and capability of new products and the potential to expand into new markets.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

IGBT Market Will Witness Market Growth Due to Increasing Government Support for EV/HEVs | Technavio

Retrieved on: 
Friday, November 20, 2020

The report offers an up-to-date analysis regarding the current market scenario, latest trends and drivers, and the overall market environment.

Key Points: 
  • The report offers an up-to-date analysis regarding the current market scenario, latest trends and drivers, and the overall market environment.
  • With these advantages and the increasing popularity of electric vehicles coupled with government initiatives, this IGBT market will grow significantly during the forecast period.
  • APAC was the largest IGBT market in 2019, and the region will offer several growth opportunities to market vendors during the forecast period.
  • To help clients improve their market position, this IGBT market forecast report provides a detailed analysis of the market leaders.

Richardson Electronics Strengthens Power Conversion Product Offering with Fuji Electric’s 7th Generation (X-Series) IGBT Modules

Retrieved on: 
Thursday, November 19, 2020

(NASDAQ: RELL) strengthened their power conversion product offering with Fuji Electrics 7 th generation (X-Series) IGBT modules .

Key Points: 
  • (NASDAQ: RELL) strengthened their power conversion product offering with Fuji Electrics 7 th generation (X-Series) IGBT modules .
  • Fujis 7 th Generation IGBT modules represent the latest IGBT chip technology and is specifically designed to complement requirements needed for the latest power conversion applications including energy savings, miniaturization, and increased reliability.
  • With over 90 years of experience, Fuji Electric is a leading developer of industrial products such as IGBT power modules, intelligent power modules, discrete rectifier diodes, and discrete MOSFET & IGBT devices.
  • For 70 years, Richardson Electronics has been your industry-leading global provider of engineered solutions, RF & microwave, and power products.

Mitsubishi Electric to Launch 4-terminal N-series 1200V SIC-MOSFETs

Retrieved on: 
Thursday, November 5, 2020

Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a new series of silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs), the N-series of 1200V SiC-MOSFETs in a TO-247-4 package,1 which achieves 30% less switching loss compared to the existing TO-247-3 package2 products.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a new series of silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs), the N-series of 1200V SiC-MOSFETs in a TO-247-4 package,1 which achieves 30% less switching loss compared to the existing TO-247-3 package2 products.
  • The new series will help to reduce the power consumption and physical size of power-supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers and photovoltaic power systems.
  • Eliminating gate-source voltage drops due to current variations helps to reduce switching loss by approximately 30% compared with TO-247-3 products.
  • 3 Performance index of power MOSFETs, calculated by multiplying on-resistance by gate-drain charge (100C junction temperature).

Intelligent Power Module Market revenue to cross USD 2.5 Bn by 2026: Global Market Insights, Inc.

Retrieved on: 
Tuesday, October 20, 2020

The growing adoption of intelligent power modules in power converters, electric motor drives for aircraft will fuel the market growth over the coming years.

Key Points: 
  • The growing adoption of intelligent power modules in power converters, electric motor drives for aircraft will fuel the market growth over the coming years.
  • Intelligent power modules offer several features such as low noise radiation, high-performance, small footprint, and increased power density.
  • Some major findings of the intelligent power module market report include:
    - The increasing trend toward vehicle electrification will accelerate the demand for intelligent power modules.
  • - Technological advancements in IGBT devices to reduce power consumption and achieve low noise in industrial equipment & motors will drive the intelligent power module market size.

Toshiba Launches 1200V Silicon Carbide MOSFET That Contributes to High-efficiency Power Supply

Retrieved on: 
Monday, October 19, 2020

Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched TW070J120B , a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply.

Key Points: 
  • Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched TW070J120B , a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply.
  • View the full release here: https://www.businesswire.com/news/home/20201018005077/en/
    Toshiba: a 1200V silicon carbide (SiC) MOSFET TW070J120B for industrial equipment including large capacity power supply.
  • (Graphic: Business Wire)
    The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products.
  • [1] Toshibas news release on July 30, 2020: Toshibas New Device Structure Improves SiC MOSFET Reliability

Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Retrieved on: 
Tuesday, September 29, 2020

Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , GaN/SiC , Power IC and Digital Power products.

Key Points: 
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , GaN/SiC , Power IC and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions.
  • AOSs portfolio of products targets high-volume applications, including portable computers, flat-panel TVs, LED lighting, smartphones, battery packs, consumer and industrial motor controls, and power supplies for TVs, computers, servers, and telecommunications equipment.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

Fuji Electric Announces New Line-Up of IPM Modules Based on Our 7th-Generation X-Series IGBT Technology

Retrieved on: 
Monday, September 21, 2020

Fuji Electric Corp has added the newest Small Intelligent Power Module (IPM) as part of our new 7th Generation X-Series Portfolio.

Key Points: 
  • Fuji Electric Corp has added the newest Small Intelligent Power Module (IPM) as part of our new 7th Generation X-Series Portfolio.
  • Fuji Electric is a global developer of IGBT modules used in todays power electronic systems including power converters, variable-speed drives, uninterruptable power supplies, HVAC, and renewable energy systems.
  • View the full release here: https://www.businesswire.com/news/home/20200921005753/en/
    Fuji Electric IGBT Modules-IPM (Graphic: Business Wire)
    The latest IPM modules come equipped with a control IC providing IGBT drive and protection circuits, making the design of peripheral circuits straightforward and ensuring high system reliability.
  • Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd., headquartered in Tokyo, Japan and has been responsible for sales and distribution of the companys products since 1970.