Insulated-gate bipolar transistor

Marelli supplies the inverter for the new BMW CE 04 electric scooter

Retrieved on: 
Wednesday, February 23, 2022
Silicon carbide, Ampere, ASIL, Magneti Marelli, Efficiency, Water, Automotive safety, Electronics, Gallium nitride, Architecture, Multimedia, Insulated-gate bipolar transistor, AC, View, BMW, Humidity, Technology, AutoNation, IGBT, Motor vehicle, Software, Direct, Electric battery, Rail transport

Leveraging on the internal engineering and manufacturing capabilities, the product supplied for the BMW CE 04 is entirely developed and produced in-house by Marelli, in its white room.

Key Points: 
  • Leveraging on the internal engineering and manufacturing capabilities, the product supplied for the BMW CE 04 is entirely developed and produced in-house by Marelli, in its white room.
  • "We are glad to be on board such an outstanding electric vehicle like the BMW CE 04.
  • In particular, the inverter for the BMW CE 04 electric scooter delivers 43.5 Kilowatt peak at nominal voltage of 145 Volt, with full performance (300 Ampere rms) in the 115-175 Volt range.
  • Also the inverter software has been developed by Marelli, with BMW providing the vehicle software, hosted by an Electric Control Unit located in the same inverter case.

Global Insulated-Gate Bipolar Transistors (IGBT) Market Trajectory & Analytics Report 2021 - ResearchAndMarkets.com

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Friday, February 4, 2022
Other Manufacturing, Manufacturing, Growth, IGBT, Solution, Sale, Wind, Discrete, Insulated-gate bipolar transistor, Adoption, Efficiency, Disruption, COVID-19, DC-AC, CAGR, DC-DC, EV, Race, Electronics, Virus, MOSFET, EVS, UPS, Electronic component, Pet, Electric power industry, Animal

The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The global market for Insulated-Gate Bipolar Transistors (IGBT) estimated at US$5.6 Billion in the year 2020, is projected to reach a revised size of US$8.6 Billion by 2026, growing at a CAGR of 7.8% over the analysis period.
  • This segment currently accounts for a 34.9% share of the global Insulated-Gate Bipolar Transistors (IGBT) market.
  • The U.S. Market is Estimated at $1.5 Billion in 2021, While China is Forecast to Reach $1.3 Billion by 2026
    The Insulated-Gate Bipolar Transistors (IGBT) market in the U.S. is estimated at US$1.5 Billion in the year 2021.

With Market Size Valued at $8.6 Billion by 2026, it`s a Healthy Outlook for the Global Insulated-Gate Bipolar Transistors (IGBT) Market

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Wednesday, December 8, 2021
IGT, Infineon Technologies, DC-AC, Efficiency, GIA, Consumer electronics, Mitsubishi Electric, Insulated-gate bipolar transistor, Electronics, EV, Players, Industrial, Thermal management of high-power LEDs, Renesas Electronics, Marketing, DC-DC, Wind, Low power, IGBT, Growth, Name, UPS, MOSFET, Power rating, SAN, Hemlock Semiconductor Corporation, Research, Power, Forecasting, Littelfuse, EVS, CAGR, Intelligence, COVID-19, Adoption, Sale, Solution, Internet, Electronic component

We are offering a complimentary access to qualified executives driving strategy, business development, sales & marketing, and product management roles at featured companies.

Key Points: 
  • We are offering a complimentary access to qualified executives driving strategy, business development, sales & marketing, and product management roles at featured companies.
  • Previews provide deep insider access to business trends; competitive brands; domain expert profiles; and market data templates and much more.
  • This segment currently accounts for a 34.9% share of the global Insulated-Gate Bipolar Transistors (IGBT) market.
  • Global Industry Analysts, Inc., ( www.strategyr.com ) is a renowned market research publisher the world`s only influencer driven market research company.

Ideal Power Releases Whitepaper on B-TRAN™ Enabled Solid-State Circuit Breakers

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Tuesday, November 2, 2021
IGBT, United, Securities Act of 1933, IPWR, Adoption, Private Securities Litigation Reform Act, NASDAQ, Use of Free and Open-Source Software (FOSS) in the U.S. Department of Defense, Insulated-gate bipolar transistor, AC, SEC, Company, Bipolar junction transistor, Command, Intention, Environment, Bidirectional, Program, Solution, Nasdaq, Energy Independence and Security Act of 2007, DTI, Silicon, Diversified Technology, GLOBE, KV, Securities Exchange Act of 1934, Electronic component, Transformer

The whitepaper describes how Ideal Powers patented, proprietary, semiconductor power switch architecture, the Bidirectional Bipolar Junction Transistor (B-TRAN), solves the limitations of both mechanical circuit breakers now in widespread use, as well as those of solid-state circuit breaker (SSCB) solutions using power semiconductors such as the Insulated-Gate Bipolar Transistor (IGBT).

Key Points: 
  • The whitepaper describes how Ideal Powers patented, proprietary, semiconductor power switch architecture, the Bidirectional Bipolar Junction Transistor (B-TRAN), solves the limitations of both mechanical circuit breakers now in widespread use, as well as those of solid-state circuit breaker (SSCB) solutions using power semiconductors such as the Insulated-Gate Bipolar Transistor (IGBT).
  • A B-TRAN enabled SSCB could potentially displace mechanical circuit breakers, which are roughly ten times slower than SSCBs (operating in milliseconds instead of microseconds) and prone to arcing and wear.
  • Ideal Power believes B-TRAN modules will reduce conduction and switching losses, complexity of thermal management and operating cost in medium voltage AC power switching and control circuitry.
  • Ideal Power disclaims any intention to, and undertake no obligation to, update or revise forward-looking statements.

Global Industry Analysts Predicts the World Insulated-Gate Bipolar Transistors (IGBT) Market to Reach $8.5 Billion by 2026

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Thursday, October 14, 2021
Internet, Players, Electronics, Forecasting, Mitsubishi Electric, Hitachi, Semiconductor, Electric vehicle, Power rating, CAGR, Growth, Consumer electronics, Discrete, Infineon Technologies, Insulated-gate bipolar transistor, Marketing, Intelligence, ABB, GIA, Energy, Toshiba, UPS, Power, SAN, Renesas Electronics, Industrial, IGBT, Low power, Research, High-power rocketry, COVID-19, Renewable energy, Electronic component, Pet

SAN FRANCISCO, Oct. 14, 2021 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" .

Key Points: 
  • SAN FRANCISCO, Oct. 14, 2021 /PRNewswire/ --A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" .
  • Preview Registry
    Amid the COVID-19 crisis, the global market for Insulated-Gate Bipolar Transistors (IGBT) estimated at US$5.2 Billion in the year 2020, is projected to reach a revised size of US$8.5 Billion by 2026, growing at a CAGR of 8.3% over the analysis period.
  • The U.S. Market is Estimated at $1.5 Billion in 2021, While China is Forecast to Reach $1.9 Billion by 2026
    The Insulated-Gate Bipolar Transistors (IGBT) market in the U.S. is estimated at US$1.5 Billion in the year 2021.
  • Global Industry Analysts, Inc., ( www.strategyr.com )is a renowned market research publisher the world`s only influencer driven market research company.

New Analysis from Global Industry Analysts Reveals Steady Growth for Power Transistors, with the Market to Reach $18.4 Billion Worldwide by 2026

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Friday, September 10, 2021

SAN FRANCISCO, Sept. 10, 2021 /PRNewswire/ -- A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Power Transistors - Global Market Trajectory & Analytics" .

Key Points: 
  • SAN FRANCISCO, Sept. 10, 2021 /PRNewswire/ -- A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Power Transistors - Global Market Trajectory & Analytics" .
  • Previews provide deep insider access to business trends; competitive brands; domain expert profiles; and market data templates and much more.
  • The U.S. Market is Estimated at $4.5 Billion in 2021, While China is Forecast to Reach $3.5 Billion by 2026
    The Power Transistors market in the U.S. is estimated at US$4.5 Billion in the year 2021.
  • Global Industry Analysts, Inc., ( www.strategyr.com ) is a renowned market research publisher the world`s only influencer driven market research company.

Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Solutions Now Available at 1700V

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Tuesday, July 27, 2021
Electronics industry, Transistors, Materials, Power electronics, Digital electronics, Semiconductor devices, MOSFETs, Power module, Silicon carbide, Silicon, Insulated-gate bipolar transistor, Integrated circuit

To meet these requirements, Microchip Technology Inc. (Nasdaq: MCHP) today announced the expansion of its silicon carbide portfolio with a family of high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power modules .

Key Points: 
  • To meet these requirements, Microchip Technology Inc. (Nasdaq: MCHP) today announced the expansion of its silicon carbide portfolio with a family of high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power modules .
  • Microchips 1700V silicon carbide technology is an alternative to silicon IGBTs.
  • The new silicon carbide product family allows engineers to move beyond IGBTs, instead using two-level topologies with reduced part count, greater efficiency and simpler control schemes.
  • Microchips 1700V silicon carbide MOSFET die, discrete and power modules are available now for order in a variety of package options.

Global and China Power Discrete (IGBT + MOSFET) Market (2021 to 2025) - Featuring CR Micro, Star Power and BYD Among Others - ResearchAndMarkets.com

Retrieved on: 
Tuesday, July 27, 2021
Other Energy, Energy, Transistors, Semiconductor devices, Electronics industry, MOSFETs, Digital electronics, Integrated circuits, Insulated-gate bipolar transistor

The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering.
  • In 2020, the global market value of power discrete devices was US$ 26 billion, which expanded steadily in the past decade, with a CAGR of 6%.
  • The factors driving the market expansion include increasing demand for energy-saving electronic equipment, increasing demand for power products and increasing public awareness of environmental issues/stricter supervision.
  • From 2020 to 2025, the CAGR of industrial control and consumption application in China market will be stable at 2-5%.

ROHM Introduces Hybrid IGBTs with Built-In SiC Diode

Retrieved on: 
Monday, July 19, 2021
Electronics industry, Transistors, Semiconductor devices, Power electronics, Diodes, MOSFETs, Insulated-gate bipolar transistor, Schottky diode, Diode, Silicon carbide, Power semiconductor device, Schottky barrier

Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortodayannounced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductortodayannounced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode.
  • The RGWxx65C series ( RGW60TS65CHR , RGW80TS65CHR , RGW00TS65CHR ) utilizes ROHMs low-loss SiC Schottky barrier diodes in the IGBT feedback block as a freewheeling diode that has almost no recovery energy, thus minimal diode switching loss.
  • At the same time, the diversification of power semiconductors used in various vehicle inverter and converter circuits necessary to configure more efficient systems is currently underway, along with technological innovation of both ultra-low-loss SiC power devices (i.e., SiC MOSFETs, SiC SBDs) and conventional silicon power devices (e.g., IGBTs, Super Junction MOSFETs).
  • To provide effective power solutions for a wide range of applications, ROHM is focusing not only on product and technology development for industry leading SiC power devices, but also for silicon products and driver ICs.

Mitsubishi Electric to Launch T-series 2.0kV IGBT Module for Industrial Use

Retrieved on: 
Wednesday, June 9, 2021
Semiconductor, Technology, Manufacturing, Alternative energy, Energy, Other Manufacturing, Hardware, Electronics industry, Semiconductor devices, Information and communications technology, Power electronics, MOSFETs, Insulated-gate bipolar transistor, Transistor, HVDC converter, Phase converter

Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the worlds first IGBT1 with 2.0kV withstand voltage, on June 30.

Key Points: 
  • Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the worlds first IGBT1 with 2.0kV withstand voltage, on June 30.
  • The module is ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which are in high demand due to the growing use of renewable-energy power supplies.
  • The module will be exhibited at the Applied Power Electronics Conference (APEC) 2021 Virtual Exposition from June 15 to 16.
  • 1 According to Mitsubishi Electric research as of June 9, 2021
    Worlds first 2.0kV-rated IGBT suitable for DC1500V-rated power converters, which are difficult to design using conventional 1.7kV-rated IGBTs.