Inorganic compounds

Semiconductor Market in East Asia to grow by USD 84.41 billion|Technavio

Retrieved on: 
Monday, August 2, 2021
Chemistry, Physical sciences, Chemical compounds, Inorganic compounds, Bazaars, Marketplace, Gallium arsenide, SEMI, Gallium nitride, National Semiconductor

To gain access to detailed market landscape, vendor analysis, and future trends impacting the growth of the market, download a sample:

Key Points: 
  • To gain access to detailed market landscape, vendor analysis, and future trends impacting the growth of the market, download a sample:
    Semiconductor Market in East Asia 2021-2025: Vendor Analysis and Scope
    To help businesses improve their market position, the semiconductor market in East Asia provides a detailed analysis of around 25 vendors operating in the market.
  • The report also covers the following areas:
    The growth of the consumer electronics market will offer immense growth opportunities.
  • Backed with competitive intelligence and benchmarking, our research reports on the semiconductor market in East Asia are designed to provide entry support, customer profile & M&As as well as go-to-market strategy support.
  • Semiconductor Market in East Asia 2021-2025: Key Highlights
    Related Reports on Information Technology Include:
    Global Compound Semiconductor Market- The compound semiconductor market is segmented by end-user (consumer electronics, communications, defense and aerospace, automotive, and others), type (GaAs, GaN, SiC, and others), and geography (APAC, North America, Europe, South America, and MEA).

EPC Space Announces Cost Effective New 60 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications

Retrieved on: 
Wednesday, July 28, 2021
Other Manufacturing, Technology, Semiconductor, Engineering, Satellite, Other Technology, Aerospace, Manufacturing, Hardware, Chemistry, Physical sciences, Natural sciences, Integrated circuits, Chemical elements, Inorganic compounds, Gallium nitride, Nitrides, Field-effect transistors, Radiation hardening, Transistor, Gallium

EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET.

Key Points: 
  • EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET.
  • The EPC7014UB , is a 60 V, 580 m, 4 APulsed, rad-hard eGaN FET in an industry standard UB package.
  • GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, lower cost, and greater power densities than achievable with rad hard silicon, said Bel Lazar, CEO of EPC Space.
  • EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

II-VI Incorporated Introduces Heated Ion Implantation Foundry Services for 150 mm Silicon Carbide Wafers

Retrieved on: 
Monday, June 21, 2021
Chemistry, Physical sciences, Inorganic compounds, Semiconductor device fabrication, Wafer, Silicon carbide, Epitaxy, Gallium arsenide, Gallium phosphide, Light-emitting diode, Indium phosphide, Ion implantation

PITTSBURGH, June 21, 2021 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leading global provider of foundry ion implantation services and support to the microelectronics industry, today announced the introduction of heated ion implantation foundry services for 150mm silicon carbide (SiC) wafers.

Key Points: 
  • PITTSBURGH, June 21, 2021 (GLOBE NEWSWIRE) -- IIVI Incorporated (Nasdaq: IIVI), a leading global provider of foundry ion implantation services and support to the microelectronics industry, today announced the introduction of heated ion implantation foundry services for 150mm silicon carbide (SiC) wafers.
  • II-VI now offers the worlds most advanced ion implantation foundry services and support for state-of-the-art 150 mm diameter SiC wafers.
  • To our knowledge, II-VI is the first foundry in the world to provide such advanced ion implantation services commercially for 150 mm SiC wafers and we plan to scale to 200 mm in the future, said Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies Business Unit.
  • II-VIs broad range of wafer foundry services includes silicon carbide, gallium arsenide, and indium phosphide epitaxial growth.

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN®) Transistors and Integrated Circuits for Demanding Space Applications

Retrieved on: 
Tuesday, June 8, 2021
Satellite, Software, Hardware, Data management, Engineering, Technology, Aerospace, Manufacturing, Chemistry, Physical sciences, Technology, Semiconductor devices, Inorganic compounds, Efficient Power Conversion, Integrated circuits, Gallium nitride, Transistor, Radiation hardening, Gallium, Monolithic microwave integrated circuit

EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits.

Key Points: 
  • EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits.
  • With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
  • Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.
  • Follow EPC on social media: LinkedIn , YouTube , Facebook , Twitter , Instagram , YouKu
    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20210608005267/en/

StratEdge High-performance Semiconductor Packages to be on Display at IMS2021, June 8-9, in Booth 1014

Retrieved on: 
Monday, June 7, 2021
Semiconductor, Engineering, Consumer electronics, Technology, Manufacturing, Hardware, Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Solar cells, Gallium nitride, Nitrides, Gallium arsenide, Gallium, Flat no-leads package, Gaas, Light-emitting diode physics

StratEdge packages operate from DC to 63+ GHz and dissipate heat from compound semiconductor devices such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC).

Key Points: 
  • StratEdge packages operate from DC to 63+ GHz and dissipate heat from compound semiconductor devices such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC).
  • These packages enable compound semiconductor devices to meet the critical requirements of markets such as telecom, mixed signal, VSAT, broadband wireless, satellite, military, test and measurement, automotive, and down-hole.
  • Also join StratEdge for the Industry Talk series taking place on Monday, June 21, in the IMS virtual environment.
  • StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices.

StratEdge SMK Surface Mount Packages Support DC to 26 GHz Devices

Retrieved on: 
Tuesday, April 27, 2021
Semiconductor, Satellite, Technology, Telecommunications, Mobile, Wireless, Software, Hardware, Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Electronics manufacturing, Electronic design, Flat no-leads package, Gallium arsenide, Semiconductor package, Surface-mount technology, Gallium, Soldering

b'StratEdge Corporation , leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces the release of its SMK Series surface mount DC to 26 Gigahertz (GHz) packages for test and measurement, VSAT, point-to-point, point-to-multipoint, and WiMax applications.

Key Points: 
  • b'StratEdge Corporation , leader in the design and production of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, announces the release of its SMK Series surface mount DC to 26 Gigahertz (GHz) packages for test and measurement, VSAT, point-to-point, point-to-multipoint, and WiMax applications.
  • These power packages have low insertion loss, good return loss, and excellent thermal properties.\nThe SMK Series ceramic packages were designed to provide good electrical transition performance for die in the DC to 26 GHz range.
  • These are true surface mount packages that allow automated assembly and soldering for high volume production of devices without sacrificing electrical and thermal performance.
  • StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices.

Efficient Power Conversion (EPC) Launches 40 V eGaN® FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Retrieved on: 
Thursday, December 17, 2020
Technology, Engineering, Automotive Manufacturing, Other Energy, Manufacturing, Alternative Vehicles, Fuels, Automotive, Alternative energy, Energy, Other Technology, Hardware, Other Manufacturing, Electronic design automation, Performance & Special Interest, Electronics industry, Chemistry, Physical sciences, Semiconductor devices, Field-effect transistors, MOSFETs, Alex Lidow, Inorganic compounds, Transistor, Gallium nitride, Depletion and enhancement modes, Gallium

Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.

Key Points: 
  • Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.
  • This device is ideal for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters.
  • According to Alex Lidow, EPCs co-founder and CEO, The EPC2055 is a very good example of the rapid evolution of GaN FET technology.
  • eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20201217005215/en/

Growth Opportunities in Terahertz, Compound Semiconductors, and AI Accelerators, 2020 Market Report - ResearchAndMarkets.com

Retrieved on: 
Wednesday, December 16, 2020
Technology, Semiconductor, Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Nitrides, Terahertz technology, Gallium nitride, Gallium, Semiconductor, Terahertz time-domain spectroscopy

The "Growth Opportunities in Terahertz, Compound Semiconductors, and AI Accelerators" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Growth Opportunities in Terahertz, Compound Semiconductors, and AI Accelerators" report has been added to ResearchAndMarkets.com's offering.
  • The Microelectronics Technology Opportunity Engine covers advancements in terahertz, compound semiconductors, and AI accelerators.
  • Some of the innovations include advancements in photodetectors and terahertz detectors for telecommunication, electron beam-steering antenna, gallium-on silicon and gallium nitride for electronics, low power FPGA, and AI accelerators.
  • The Microelectronics Technology Opportunity Engine captures global electronics-related innovations and developments on a weekly basis.

VisIC unveils new 8mOhm power switch for EV Inverters

Retrieved on: 
Wednesday, December 16, 2020
Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Gallium nitride, Nitrides, Power inverter, Gallium, Transistor, Inverter

The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.

Key Points: 
  • The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.
  • "The V8 product doubles the current capabilities and reduces resistance by a factor of 2.5 times over the previous generation of VisIC product.
  • This will allow our customers to improve their inverter systems to be more efficient in size, power, and cost for the target EV market."
  • VisIC offers high power transistor products based upon compound semiconductor Gallium Nitride (GaN) material aiming to provide products for cost-effective and high-performance automotive inverter systems.

VisIC unveils new 8mOhm power switch for EV Inverters

Retrieved on: 
Wednesday, December 16, 2020
Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Gallium nitride, Nitrides, Power inverter, Gallium, Transistor, Inverter

The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.

Key Points: 
  • The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.
  • "The V8 product doubles the current capabilities and reduces resistance by a factor of 2.5 times over the previous generation of VisIC product.
  • This will allow our customers to improve their inverter systems to be more efficient in size, power, and cost for the target EV market."
  • VisIC offers high power transistor products based upon compound semiconductor Gallium Nitride (GaN) material aiming to provide products for cost-effective and high-performance automotive inverter systems.