Media Alert: Atomera to Present Joint Paper with Soitec and San Jose State University on Advanced RF Technologies at 8th IEEE Electronic Devices Technology and Manufacturing (EDTM) Conference 2024
Rapid out-diffusion of boron from the SOI layer into BOX (buried oxide) layer has been observed for regular RF-SOI substrates.
- Rapid out-diffusion of boron from the SOI layer into BOX (buried oxide) layer has been observed for regular RF-SOI substrates.
- The new SSROI substrate reduces body resistance for power handling improvement of RF switch devices, in addition to reducing the surface channel doping and thus impurity scattering for cutoff frequency improvement of LNA (low noise amplifier) devices.
- The benefits of SSROI substrate will be demonstrated via >20% improvement in Rdson at the same DC-breakdown from experimental data as well as extension of SOI thickness and gate length scaling from 3D-TCAD simulation data for RF switch devices and via >50% gm (trans-conductance) improvement from TCAD simulation data for LNA devices.
- Atomera’s RF-optimized Mears Silicon Technology (MST) is epitaxially deposited onto ultra-thin RF-SOI wafers, providing improvements in critical RF switch characteristics for 5G Advanced and 6G applications.