Gan

GaN Semiconductor Devices Market to Exhibit Massive CAGR of 17.4% due to Flourishing Automotive Industry - TMR

Retrieved on: 
Wednesday, August 28, 2019
Chemistry, Physical sciences, Gallium nitride, Nitrides, Motorola, Gan

According to the research report, the GaN semiconductor devices market stood at an initial valuation of US$870.9 mn in 2016.

Key Points: 
  • According to the research report, the GaN semiconductor devices market stood at an initial valuation of US$870.9 mn in 2016.
  • With a massive CAGR of 17.4% expected over the course of the given forecast period of 2016 to 2024, the global GaN semiconductor devices market will reach a valuation of US$3438.4 mn.
  • The competition in the market is pretty intense and is only expected to grow as new players are starting to enter in the GaN semiconductor devices market.
  • The automotive sector is the biggest end-user and growth driver for the global GaN semiconductor devices market.

GaN Semiconductor Devices Market to Exhibit Massive CAGR of 17.4% due to Flourishing Automotive Industry - TMR

Retrieved on: 
Wednesday, August 28, 2019
Chemistry, Physical sciences, Gallium nitride, Nitrides, Motorola, Gan

According to the research report, the GaN semiconductor devices market stood at an initial valuation of US$870.9 mn in 2016.

Key Points: 
  • According to the research report, the GaN semiconductor devices market stood at an initial valuation of US$870.9 mn in 2016.
  • With a massive CAGR of 17.4% expected over the course of the given forecast period of 2016 to 2024, the global GaN semiconductor devices market will reach a valuation of US$3438.4 mn.
  • The competition in the market is pretty intense and is only expected to grow as new players are starting to enter in the GaN semiconductor devices market.
  • The automotive sector is the biggest end-user and growth driver for the global GaN semiconductor devices market.

Transphorm Strengthens 900 V GaN Portfolio with Second FET

Retrieved on: 
Tuesday, June 25, 2019
Electronic design automation, Engineering, Consumer electronics, Automotive Manufacturing, General Automotive, Technology, Manufacturing, Semiconductor, Other Energy, Alternative energy, Energy, Automotive, Other Technology, Telecommunications, Networks, Hardware, Chemistry, Physical sciences, Semiconductors, Nitrides, Gallium nitride, Transphorm, Gan, Transistor, Field-effect transistor, Johnson's figure of merit

Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday introduced its second 900 V FET, the Gen III TP90H050WS , enhancing the industrys only 900 V GaN product line.

Key Points: 
  • Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday introduced its second 900 V FET, the Gen III TP90H050WS , enhancing the industrys only 900 V GaN product line.
  • While a JEDEC qualified version is slated for Q1 2020, customers can design 900 V GaN power systems today.
  • Transphorms latest 900 V GaN product represents a major milestone for commercial GaN power transistors as it reaches the 1 kilovolt mark, an industry first.
  • 900 V GaN power devices eliminate barriers to access applications not presently supported with GaN semiconductors.

Navitas Earns 2019 Global Technology Innovation Award for GaNFast™ Power ICs

Retrieved on: 
Thursday, June 20, 2019
Chemistry, Physical sciences, Chemical elements, Integrated circuit, Gan, Gallium

SANTA CLARA, Calif., June 20, 2019 /PRNewswire/ --Based on its recent analysis of the global gallium nitride (GaN) integrated circuit (IC) market, Frost & Sullivan recognizes Navitas Semiconductor, Inc. with the 2019 Global Technology Innovation Award for its unique GaNFast power ICs.

Key Points: 
  • SANTA CLARA, Calif., June 20, 2019 /PRNewswire/ --Based on its recent analysis of the global gallium nitride (GaN) integrated circuit (IC) market, Frost & Sullivan recognizes Navitas Semiconductor, Inc. with the 2019 Global Technology Innovation Award for its unique GaNFast power ICs.
  • "Navitas' power ICs address system and application-level concerns relating to power electronic circuits incorporated with GaN.
  • In renewable energy, Navitas' GaNFast power ICs can be embedded in solar micro-inverters to significantly reduce operating costs and increase productivity.
  • "We're honored to receive this global technology innovation award," replied Gene Sheridan, Navitas CEO and Co-Founder.

Navitas Earns 2019 Global Technology Innovation Award for GaNFast™ Power ICs

Retrieved on: 
Thursday, June 20, 2019
Chemistry, Physical sciences, Chemical elements, Integrated circuit, Gan, Gallium

SANTA CLARA, California, June 20, 2019 /PRNewswire/ --Based on its recent analysis of the global gallium nitride (GaN) integrated circuit (IC) market, Frost & Sullivan recognizes Navitas Semiconductor, Inc. with the 2019 Global Technology Innovation Award for its unique GaNFast power ICs.

Key Points: 
  • SANTA CLARA, California, June 20, 2019 /PRNewswire/ --Based on its recent analysis of the global gallium nitride (GaN) integrated circuit (IC) market, Frost & Sullivan recognizes Navitas Semiconductor, Inc. with the 2019 Global Technology Innovation Award for its unique GaNFast power ICs.
  • "Navitas' power ICs address system and application-level concerns relating to power electronic circuits incorporated with GaN.
  • In renewable energy, Navitas' GaNFast power ICs can be embedded in solar micro-inverters to significantly reduce operating costs and increase productivity.
  • "We're honored to receive this global technology innovation award," replied Gene Sheridan, Navitas CEO and Co-Founder.

GAN Announces Chief Financial Officer Transition

Retrieved on: 
Monday, May 13, 2019
Entertainment, General Entertainment, Addu Atoll, Euronext, Gan, Islands, Geography of the Maldives

GAN plc (GAN or the Company) a leading B2B supplier of Internet gambling enterprise software-as-a-service solutions to the US land-based casino Industry, today announces the Companys Chief Financial Officer (CFO) and executive Director Richard Santiago will leave GAN effective 19 July 2019 to pursue an alternative opportunity in an unrelated Industry.

Key Points: 
  • GAN plc (GAN or the Company) a leading B2B supplier of Internet gambling enterprise software-as-a-service solutions to the US land-based casino Industry, today announces the Companys Chief Financial Officer (CFO) and executive Director Richard Santiago will leave GAN effective 19 July 2019 to pursue an alternative opportunity in an unrelated Industry.
  • As a result, GAN today announces the appointment of Mr. Rey del Valle as Chief Financial Officer-designate, who brings to GAN his significant financial experience in online gaming, with both deep U.S. Tech industry knowledge and specialist expertise relating to the financial operations of U.S. listed companies.
  • I wish to thank everyone at GAN for their support and look forward to seeing GAN realize the continuing opportunity of U.S. Internet gambling.
  • GAN is listed on the London Stock Exchange (LSE: GAN) and on Euronext Dublin (Euronext Growth: GAME).

Renesas Electronics Ships First Plastic Packaged, Radiation-Tolerant PWM Controller and GaN FET Driver for New Space SmallSats

Retrieved on: 
Thursday, April 18, 2019
Technology, Electronic design automation, Hardware, Satellite, Semiconductor, Manufacturing, Aerospace, Chemistry, Physical sciences, Field-effect transistor, Gan, Chemical compounds, Gallium nitride

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industrys first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride (GaN) FET driver for DC/DC power supplies in small satellites (smallsats) and launch vehicles.

Key Points: 
  • Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industrys first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride (GaN) FET driver for DC/DC power supplies in small satellites (smallsats) and launch vehicles.
  • The ISL71043M single-ended current mode PWM controller and ISL71040M low-side GaN FET driver are ideal for isolated flyback and half-bridge power stages, and motor control driver circuits in satellite buses and payloads.
  • The ISL71040M low-side GaN FET driver safely drives Renesas rad-hard GaN FETs in isolated topologies and boost type configurations.
  • The ISL71043M PWM controller and ISL71040M GaN FET driver can be combined with the ISL73024SEH 200V GaN FET or ISL73023SEH 100V GaN FET, and ISL71610M passive-input digital isolator to create a variety of power stage configurations.

2019 RF GaN Patent Landscape, 2019 - American and Japanese Players Dominate the RF GaN-related IP Landscape

Retrieved on: 
Tuesday, April 2, 2019
Chemistry, Physical sciences, Chemical compounds, Gallium nitride, Nitrides, Gan, High-electron-mobility transistor

RF GaN intellectual property: domination of American and Japanese players, weak presence of Europeans, and numerous Chinese new entrants

Key Points: 
  • RF GaN intellectual property: domination of American and Japanese players, weak presence of Europeans, and numerous Chinese new entrants
    In recent years, the radiofrequency (RF) GaN market has grown impressively and has reshaped the RF power device industry landscape.
  • Intel and MACOM are currently the most active patent applicants for RF GaN, both especially for GaN-on-Silicon technology, and are today the main IP challengers in the RF GaN patent landscape.
  • CETC and Xidian University dominate the Chinese patent landscape with patents on GaN RF technologies targeting microwave and mm-wave applications.
  • New entrants in the GaN RF HEMT related patent landscape are mainly Chinese players like HiWafer, Sanan IC and Beijing Huajin Chuangwei Electronics.

RAVPower's Thinnest 14mm PD GaN Charger Dazzles MWC Barcelona 2019

Retrieved on: 
Tuesday, February 26, 2019
Chemistry, Physical sciences, Chemical elements, Nitrides, Gallium nitride, Gan, Indium nitride, Charger, Gallium

BARCELONA, Spain, Feb. 26, 2019 /PRNewswire/ -- RAVPower is proud to announce their expanding product portfolio and unveil their thinnest PD GaN charger (Booth#1C27, Hall 1)

Key Points: 
  • BARCELONA, Spain, Feb. 26, 2019 /PRNewswire/ -- RAVPower is proud to announce their expanding product portfolio and unveil their thinnest PD GaN charger (Booth#1C27, Hall 1)
    RAVPower introducesthe PD GaN charger, the most innovative one-for-all chargerthey haveever launched.
  • Utilizing hyper-efficient gallium nitride, super-fast power delivery that's wrapped up in perhaps the thinnest ever charger at a groundbreaking 14mm in size.
  • Featuring universal compatibility to optimally power the majority of devices 2.5x faster, this revolutionary charger will allow users to charge without any limitations.
  • RAVPower harnessed the potential of GaN technology, provided by Navitas Semiconductor to develop their thinnest wall charger yet.

Transphorm’s Gen III GaN Platform Earns Automotive Qualification

Retrieved on: 
Tuesday, February 26, 2019
Energy, Alternative energy, Other Energy, Technology, Consumer electronics, Electronic design automation, Hardware, Other Technology, Semiconductor, Manufacturing, Automotive Manufacturing, Engineering, Other Manufacturing, Automotive, General Automotive, Chemistry, Physical sciences, Engineering, Field-effect transistor, Reliability, Gan, Gallium nitride

And, notably, its most reliable given the Gen III GaN platforms ability to perform at 175C during qualification testing.

Key Points: 
  • And, notably, its most reliable given the Gen III GaN platforms ability to perform at 175C during qualification testing.
  • Transphorms Gen III AEC-Q101 GaN FET, the TP65H035WSQA , offers a typical on-resistance of 35 m in an industry standard TO-247 package.
  • Launched in June 2018 , Transphorms Gen III devices came onto the market as the highest reliability, highest quality [Q+R] GaN FETs available.
  • Its this high reliability level that allowed Transphorm to release a Gen III automotive FET at 175 degrees Celsius.